TLP155 Photocouplers GaAℓAs Infrared LED & Photo IC TLP155 1. Applications • Plasma Display Panels (PDPs) • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed photodetectors. The TLP155 is housed in the SO6 package. The photodetector has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µ. TLP155 is suitable for direct gate driving circuit for IGBTs or power MOSFETs. 3. Features (1) Buffer logic type (Totem pole output) (2) Package type: SO6 (3) Output peak current: ±0.6 A (max) (4) Operating temperature: -40 to 100 (5) Threshold input current: 7.5 mA (max) (6) Propagation delay time: tpHL/tpLH = 200 ns (max) (7) Common-mode transient immunity: ±20 kV/µs (min) (8) Propagation delay skew: ±85 ns(max) (9) Isolation voltage: 3750 Vrms (min) 4. Packaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: VO(Output) 6: VCC 11-4L1S 1 2012-11-13 Rev.1.0 TLP155 5. Internal Circuit (Note) Fig. 5.1 Internal Circuit Note: A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4. 6. Principle of Operation 6.1. Truth Table Input LED M1 M2 Output H ON ON OFF H L OFF OFF ON L 6.2. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2 2012-11-13 Rev.1.0 TLP155 ) 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 25 Characteristics LED Symbol Input forward current Input forward current derating (Ta ≥ 92) Note Rating Unit IF 20 mA ∆IF/∆Ta -0.63 mA/ 1 A Peak transient input forward current IFPT Input reverse voltage VR 5 V Junction temperature Tj 125 A Detector Peak high-level output current Peak low-level output current (Note 1) (Ta = -40 to 100) IOPH (Note 2) -0.6 (Ta = -40 to 100) IOPL (Note 2) +0.6 Output voltage VO 35 Supply voltage VCC 35 Junction temperature Common Operating temperature Storage temperature Lead soldering temperature Isolation voltage V Tj 125 Topr -40 to 100 Tstg -55 to 125 (10 s) Tsol 260 AC, 1 min, R.H. ≤ 60%, Ta = 25 BVS (Note 3) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1 µs, 300 pps Note 2: Exponential waveform. Pulse width ≤ 2 µs, f ≤ 10 kHz, VCC = 20V, Ta = -40 to 100 Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 8. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Threshold input current (L/H) IFLH (Note 1) 10 15 mA Threshold input voltage (H/L) VFHL 0 0.8 V Supply voltage VCC (Note 2) 10 30 Peak high-level output current IOPH -0.2 Peak low-level output current IOPL +0.2 Operating temperature Topr -40 100 250 kHz Operating frequency f (Note 3) A Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this datasheet should also be considered. Note: A ceramic capacitor (0.1 µF) should be connected between pin 6 and pin 4 to stabilize the operation of a highgain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be placed within 1 cm of each pin. Note 1: The rise and fall times of the input on-current should be less than 0.5 µs. Note 2: Denotes the operating range, not the recommended operating condition. Note 3: Exponential waveform. IOPH ≥ -0.25 A (≤ 80 ns), IOPL ≤ 0.25 A (≤ 80 ns), Ta = 100 3 2012-11-13 Rev.1.0 TLP155 9. Electrical Characteristics (Note) (Unless otherwise specified, Ta = -40 to 100 ) 100 Characteristics Symbol Input forward voltage Input forward voltage temperature coefficient Min Typ. Max Unit VF IF = 10 mA, Ta = 25 1.40 1.57 1.80 V IF = 10 mA -1.8 mV/ IR VR = 5 V, Ta = 25 10 µA V = 0 V, f = 1 MHz, Ta = 25 60 pF IF = 10 mA, VCC = 15 V, V6-5 = 4 V -0.5 -0.2 A IF = 10 mA, VCC = 15 V, V6-5 = 10 V -0.4 IF = 0 mA, VCC = 15 V, V5-4 = 2 V 0.2 0.5 IF = 0 mA, VCC = 15 V, V5-4 = 10 V 0.4 Input capacitance Peak low-level output current Test Condition ∆VF/∆Ta Input reverse current Peak high-level output current Test Circuit Note Ct IOPH IOPL (Note 1) Fig. 12.1.1 (Note 1) Fig. 12.1.2 High-level output voltage VOH Fig. 12.1.3 IF = 10 mA, VCC = 10 V, IO = -100 mA 6.0 8.4 Low-level output voltage VOL Fig. 12.1.4 VF = 0.8 V, VCC = 10 V, IO = 100 mA 0.3 1.0 High-level supply current ICCH Fig. 12.1.5 IF = 10 mA, VCC = 10 to 30 V, VO = Open 1.5 3.0 Low-level supply current ICCL Fig. 12.1.6 IF = 0 mA, VCC = 10 to 30 V, VO = Open 1.5 3.0 Threshold input current (L/H) IFLH VCC = 15 V, VO > 1 V 1.0 7.5 Threshold input voltage (H/L) VFHL VCC = 15 V, VO < 1 V 0.8 Supply voltage VCC 10 30 V mA V Note: Note: All typical values are at Ta = 25. This device is designed for low power consumption, making it more sensitive to ESD than its predecessors. Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems. Note 1: IO application time ≤ 50 µs, single pulse. ) 25 10. Isolation Characteristics (Unless otherwise specified, Ta = 25 Characteristics Symbol Note Test Conditions Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60% Isolation voltage BVS (Note 1) AC, 1 min Min Typ. Max Unit 0.8 pF 1×1012 1014 Ω Vrms 3750 AC, 1 s, in oil 10000 DC, 1 min, in oil 10000 Vdc Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 4 2012-11-13 Rev.1.0 TLP155 11. Switching Characteristics (Note) (Unless otherwise specified, Ta = -40 to 100 ) 100 Characteristics Symbol Note Propagation delay time (L/H) tpLH (Note 1) Propagation delay time (H/L) tpHL Propagation delay time (L/H) Test Circuit Min Typ. Max Unit IF = 0 → 10 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF,Ta = 25 120 170 ns (Note 1) IF = 10 → 0 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF,Ta = 25 120 170 tpLH (Note 1) IF = 0 → 10 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF 50 120 200 Propagation delay time (H/L) tpHL (Note 1) IF = 10 → 0 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF 50 120 200 Propagation delay skew (device to device) tpsk (Note 1) (Note 4) IF = 0 ←→ 10 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF -85 85 |tpHL-tpLH| (Note 1) IF = 0 ←→ 10 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF 5 50 Pulse width distortion Fig. 12.1.7 Test Condition Rise time tr (Note 1) IF = 0 → 10 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF 35 Fall time tf (Note 1) IF = 10 → 0 mA, VCC = 20 V, Rg = 30 Ω, Cg = 1 nF 15 Common-mode transient immunity at output high CMH (Note 2) VCM = 1000 Vp-p, IF = 10 mA, VCC = 20 V, Ta = 25, VO(min) = 16 V ±20 Common-mode transient immunity at output low CML (Note 3) VCM = 1000 Vp-p, IF = 0 mA, VCC = 20 V, Ta = 25, VO(max) = 1 V ±20 Fig. 12.1.8 kV/µs Note: All typical values are at Ta = 25. Note 1: Input signal ( f = 250 kHz, duty = 50%, tr = tf = 5 ns or less ). CL is approximately 15 pF which includes probe and stray wiring capacitance. Note 2: CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 16 V). Note 3: CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 1 V). Note 4: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc). 5 2012-11-13 Rev.1.0 TLP155 12. Test Circuits and Characteristics Curves 12.1. Test Circuits Fig. 12.1.1 IOPH Test Circuit Fig. 12.1.2 IOPL Test Circuit Fig. 12.1.3 VOH Test Circuit Fig. 12.1.4 VOL Test Circuit Fig. 12.1.5 ICCH Test Circuit Fig. 12.1.6 ICCL Test Circuit Fig. 12.1.7 Switching Time Test Circuit and Waveform Fig. 12.1.8 Common-Mode Transient Immunity Test Circuit and Waveform 6 2012-11-13 Rev.1.0 TLP155 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow (See Fig. 13.1.1 and 13.1.2) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 13.1.1 An Example of a Temperature Profile Fig. 13.1.2 An Example of a Temperature Profile When Sn-Pb Eutectic Solder Is Used When Lead(Pb)-Free Solder Is Used • When using soldering flow (Applicable to both eutectic solder and Lead(Pb)-Free solder) Apply preheating of 150 for 60 to 120 seconds. Mounting condition of 260 within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron (Applicable to both eutectic solder and Lead(Pb)-Free solder) Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not exceeding 350 Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5 to 35 and 45% to 75%, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. 7 2012-11-13 Rev.1.0 TLP155 14. Land Pattern Dimensions for Reference Only (unit: mm) 15. Marking Fig. 15.1 Marking 8 2012-11-13 Rev.1.0 TLP155 Package Dimensions Unit: mm Weight: 0.08 g (typ.) Package Name(s) TOSHIBA: 11-4L1S 9 2012-11-13 Rev.1.0 TLP155 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 10 2012-11-13 Rev.1.0