IRF IRF7811WTRPBF

PD- 95023C
IRF7811WPbF
HEXFET® Power MOSFET for DC-DC Converters
•
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
100% Tested for Rg
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811WPbF has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811WPbF offers particulary low RDS(on) and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
T o p V ie w
DEVICE CHARACTERISTICS…
IRF7811WPbF
RDS(on)
9.0mΩ
QG
22nC
Qsw
10.1nC
Qoss
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 90°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
Symbol
IRF7811WPbF
VDS
30
VGS
±12
ID
14
IDM
109
13
PD
TL = 90°C
3.1
Units
V
A
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.8
A
Pulsed Source Current
ISM
109
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
40
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
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01/06/09
IRF7811WPbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Min
Typ
Max
Units
30
–
–
V
9.0
12
mΩ
1.0
V
30
Current*
150
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 15A‚
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current
IGSS
±100
Total Gate Chg Cont FET
QG
22
Total Gate Chg Sync FET
QG
16.3
VGS = 5V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
3.5
VDS = 16V, ID = 15A, VGS = 5.0V
Post-Vth
Gate-Source Charge
QGS2
1.2
Gate to Drain Charge
QGD
8.8
Switch Chg(Qgs2 + Qgd)
Qsw
10.1
Output Charge
Qoss
12
Gate Resistance
RG
2.0
Turn-on Delay Time
td (on)
11
nA
33
VGS = ±12V
VGS=5.0V, ID=15A, VDS=16V
nC
VDS = 16V, VGS = 0
4.0
Ω
VDD = 16V, ID = 15A
Rise Time
tr
11
Turn-off Delay Time
td (off)
29
ns
Fall Time
tf
9.9
Input Capacitance
Ciss
–
2335
–
Output Capacitance
Coss
–
400
–
Reverse Transfer Capacitance Crss
–
119
–
Typ
Max
Units
1.25
V
VGS = 5.0V
Clamped Inductive Load
pF
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
Notes:

‚
ƒ
„
…
45
nC
Conditions
IS = 15A‚, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
41
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS
measured at VGS = 5.0V, IF = 15A.
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IRF7811WPbF
6.0
ID = 15A
VGS, Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
ID= 15A
VDS = 16V
4.0
2.0
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
8
12
16
20
24
QG, Total Gate Charge (nC)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.020
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
C, Capacitance(pF)
RDS(on) , Drain-to -Source On Resistance (Ω)
4
0.015
ID = 15A
0.010
Ciss
2000
1000
Coss
0.005
Crss
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS, Gate -to -Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
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7.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7811WPbF
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 15V
20µs PULSE WIDTH
0.1
2.5
3.0
3.5
4.0
4.5
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
5.0
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
1
0.02
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7811WPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF7811WPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2009
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