IRF IRF7752GPBF

PD- 96151
IRF7752GPbF
l
l
l
l
l
l
l
HEXFET® Power MOSFET
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
VDSS
30V
RDS(on) max
ID
0.030@VGS = 10V
4.6A
0.036@VGS = 4.5V
3.9A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
'
6
6
*
'
6
6
*
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
30
4.6
3.7
37
1.0
0.64
8.0
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
125
°C/W
A
W
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambientƒ
1
05/12/08
IRF7752GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
0.60
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.030
–––
–––
–––
–––
–––
–––
–––
–––
9.0
2.5
2.6
7.2
9.1
25
11
861
210
25
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = 1mA
0.030
VGS = 10V, ID = 4.6A ‚
Ω
0.036
VGS = 4.5V, ID = 3.9A ‚
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 4.6A
20
VDS = 24V, VGS = 0V
µA
100
VDS = 24V, VGS = 0V, TJ = 125°C
-200
VGS = -12V
nA
200
VGS = 12V
–––
ID = 4.6A
–––
nC
VDS = 24V
–––
VGS = 4.5V‚
–––
VDD = 15V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
VGS = 10V‚
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
0.91
–––
–––
37
–––
–––
–––
–––
25
23
1.3
–––
–––
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 0.91A, VGS = 0V ‚
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square copper board, t<10 sec
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
www.irf.com
IRF7752GPbF
VGS
TOP
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM 2.3V
10
2.3V
1
0.1
100
10
2.3V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.01
0.1
1
10
0.01
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 150 ° C
10
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
2.3
2.7
3.0
3.3
3.7
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1
10
100
Fig 2. Typical Output Characteristics
100
1
2.0
0.1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM 2.3V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
4.0
2.0
ID = 4.6A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7752GPbF
1400
1000
VGS , Gate-to-Source Voltage (V)
1200
C, Capacitance (pF)
10
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
600
Coss
400
200
ID = 4.6A
V DS= 24V
V DS= 15V
8
6
4
2
Crss
0
1
10
0
100
VDS , Drain-to-Source Voltage (V)
8
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
VGS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
0
1.4
10us
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7752GPbF
5.0
RD
VDS
V GS
ID , Drain Current (A)
4.0
D.U.T.
RG
3.0
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7752GPbF
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.080
0.060
0.040
ID = 4.6A
0.020
0.000
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.030
VGS = 4.5V
0.025
VGS = 10V
0.020
0
5
10
VGS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs.
Gate Voltage
15
20
25
30
35
40
ID , Drain Current ( A )
Fig 12. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
QGS
.2µF
.3µF
QGD
+
V
- DS
D.U.T.
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRF7752GPbF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
'
GGG
& $ %
%27+6,'(6
;
(
(
(
,1'(;
0$5.
H
%
;
0,//,0(7(56
0,1 120
0$;
%6&
%6&
%6&
ƒ
ƒ
FFF
H
02$$',0(16,216
6
<
0
%
2
/
$
$
$
E
F
'
(
(
H
/
/
DDD
EEE
FFF
GGG
$
,1&+(6
120
0$;
%6&
%6&
ƒ
ƒ
0,1
+
$
;E
&
EEE
$
;F
& $ %
/
DDD &
685)
;/
/($'$66,*10(176
'
6
6
*
6,1*/(
',(
'
6
6
'
'
6
6
*
'8$/
',(
'
6
6
*
127(6
',0(16,21,1*$1'72/(5$1&,1*3(5$60(<0
',0(16,216$5(6+2:1,10,//,0(7(56$1',1&+(6
&21752//,1*',0(16,210,//,0(7(5
'$7803/$1(+,6/2&$7('$66+2:1
'$780$$1'%72%('(7(50,1('$7'$7803/$1(+
',0(16,216'$1'($5(0($685('$7'$7803/$1(+
',0(16,21/,67+(/($'/(1*7+)2562/'(5,1*72$68%675$7(
287/,1(&21)250672-('(&287/,1(0$$
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
7
IRF7752GPbF
TSSOP8 Part Marking Information
(;$03/(
7+,6,6$1,5)
EXAMPLE: THIS
IS AN IRF7752GPbF
3$57180%(5
F7752G
'$7(&2'(<::
/27&2'(
;;;;;
<::"3
3RSWLRQDO /HDG)UHH
$66(0%/<6,7(&2'(
TSSOP-8 Tape and Reel Information
PP
‘
PP
PP
)(('',5(&7,21
127(6
7$3(5((/287/,1(&21)250672(,$(,$
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2008
8
www.irf.com