MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • COLLECTOR 3 Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc ICM −1200 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C 417 °C/W 350 mW Collector Current − Continuous Collector Current − Peak (Note 3) 2 EMITTER 3 SOT−23 (TO−236AB) CASE 318 STYLE 6 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation − FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation − Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C PD RJA PD Thermal Resistance, Junction−to−Ambient RJA Total Device Dissipation − Heat Spreader or equivalent, (Note 4) @TA = 25°C PD Thermal Resistance, Junction−to−Ambient RJA 357 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. 4. Heat Spreader or equivalent = 450 mm2, 2 oz. MARKING DIAGRAM 2F M G G 1 2F = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT2907ALT1G SMMBT2907ALT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT2907ALT3G SMMBT2907ALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 13 1 Publication Order Number: MMBT2907ALT1/D MMBT2907AL, SMMBT2907AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max −60 −60 − − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 5) (IC = −1.0 mAdc, IB = 0) (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO −60 − Vdc Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 125°C) ICBO − − −0.010 −10 − −50 75 100 100 100 50 − − − 300 − − − −0.4 −1.6 − − −1.3 −2.6 fT 200 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 ton − 45 td − 10 tr − 40 toff − 100 ts − 80 tf − 30 Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL Vdc Adc nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) (Note 5) hFE Collector −Emitter Saturation Voltage (Note 5) (IC = −150 mAdc, IB = −15 mAdc) (Note 5) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 5) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Notes 5, 6), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn−On Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) Delay Time Rise Time Turn−Off Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) Storage Time Fall Time ns 5. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. 6. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V -30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 2 MMBT2907AL, SMMBT2907AL TYPICAL CHARACTERISTICS 1000 VCE = 10 V hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 -55°C 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25°C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 t′s = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn−On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time http://onsemi.com 3 MMBT2907AL, SMMBT2907AL TYPICAL SMALL−SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0 C, CAPACITANCE (pF) 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 Ccb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain − Bandwidth Product 1 1.1 IC/IB = 10 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 50 f, FREQUENCY (kHz) 20 150°C 25°C −55°C 0.1 0.01 IC = -50 A -100 A -500 A -1.0 mA 4.0 100 30 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz IC/IB = 10 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.001 0.01 0.1 0.2 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 4 1 MMBT2907AL, SMMBT2907AL TYPICAL SMALL−SIGNAL Characteristics NOISE FIGURE 1.2 1.1 +0.5 VCE = 1 V 0 0.9 COEFFICIENT (mV/ ° C) 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 0.3 0.2 0.001 0.01 0.1 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 1 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 13. Base Emitter Voltage vs. Collector Current Figure 14. Temperature Coefficients 10 10 ms 100 ms 1 1s Thermal Limit IC (A) VBE(on), BASE−EMITTER VOLTAGE (V) VCE = 10 Vdc, TA = 25°C 1 ms 0.1 0.01 0.001 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 VCE (Vdc) Figure 15. Safe Operating Area http://onsemi.com 5 100 MMBT2907AL, SMMBT2907AL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 q 0° −−− 10 ° 0° −−− 10° D SEE VIEW C 3 HE E c 1 2 e b 0.25 q A L A1 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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