ONSEMI MMBT4401LT3G

MMBT4401LT1G
Switching Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
ICM
900
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
Collector Current − Peak
1
BASE
2
EMITTER
3
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
1
2
MARKING DIAGRAM
2X M G
G
1
2X = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT4401LT1G
SOT−23
(Pb−Free)
3000 Tape & Reel
MMBT4401LT3G
SOT−23
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 9
1
Publication Order Number:
MMBT4401LT1/D
MMBT4401LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
−
0.1
mAdc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
−
0.1
mAdc
20
40
80
100
40
−
−
−
300
−
−
−
−
0.4
0.75
0.75
−
0.95
1.2
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
−
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.5
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10− 4
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
−
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mmhos
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
tr
−
20
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
30
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
+16 V
0
-2.0 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200 W
+16 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200 W
0
1.0 kW
< 2.0 ns
1.0 kW
-14 V
CS* < 10 pF
< 20 ns
-4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS* < 10 pF
MMBT4401LT1G
TRANSIENT CHARACTERISTICS
25°C
10
7.0
5.0
100°C
VCC = 30 V
IC/IB = 10
Q, CHARGE (nC)
3.0
QT
2.0
1.0
0.7
0.5
0.3
0.2
QA
0.1
10
20
200
50 70 100
30
IC, COLLECTOR CURRENT (mA)
300
500
Figure 3. Charge Data
100
100
IC/IB = 10
70
VCC = 30 V
IC/IB = 10
70
tr
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
30
20
t, TIME (ns)
t, TIME (ns)
50
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn−On Time
Figure 5. Rise and Fall Times
300
300
500
100
ts′ = ts - 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
70
50
t f , FALL TIME (ns)
200
t s′, STORAGE TIME (ns)
tf
30
100
70
IC/IB = 20
30
20
IC/IB = 10
10
50
7.0
30
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
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3
300
500
MMBT4401LT1G
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
IC = 1.0 mA, RS = 150 W
IC = 500 mA, RS = 200 W
IC = 100 mA, RS = 2.0 kW
IC = 50 mA, RS = 4.0 kW
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
f = 1.0 kHz
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
6.0
4.0
2.0
IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
0
10
20
50
100
50
100 200
Figure 8. Frequency Effects
500 1.0k 2.0k 5.0k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k 100k
Figure 9. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
hie , INPUT IMPEDANCE (OHMS)
50k
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
20k
10k
5.0k
2.0k
1.0k
500
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Input Impedance
100
7.0
5.0
hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
50
20
10
2.0
1.0
0.1
5.0 7.0 10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Voltage Feedback Ratio
Figure 12. Output Admittance
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4
5.0 7.0 10
MMBT4401LT1G
STATIC CHARACTERISTICS
500
450
h FE, DC CURRENT GAIN
400
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
TJ = 150°C
350
300
25°C
250
200
-55°C
150
100
50
0
1
0.1
IC, COLLECTOR CURRENT (A)
0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.2
1.0
0.8
IC = 1.0 mA
100 mA
10 mA
300 mA
500 mA
0.6
0.4
0.2
0
0.001
0.01
0.1
1
100
10
IB, BASE CURRENT (mA)
0.35
+0.5
IC/IB = 10
0.30
0
COEFFICIENT (mV/ °C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Figure 14. Collector Saturation Region
0.25
150°C
0.20
25°C
0.15
0.10
-55°C
0
0.1
0.001
0.01
IC, COLLECTOR CURRENT (A)
-0.5
-1.0
-1.5
-2.0
0.05
0.0001
qVC for VCE(sat)
-2.5
0.1 0.2
1
Figure 15. Collector−Emitter Saturation
Voltage vs. Collector Current
qVB for VBE
0.5
50
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
Figure 16. Temperature Coefficients
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5
500
MMBT4401LT1G
STATIC CHARACTERISTICS
1.0
IC/IB = 10
1.0
VBE(on), BASE−EMITTER TURN ON
VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.0001
0.001
0.01
0.1
VCE = 2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
0.3
1
150°C
0.0001
IC, COLLECTOR CURRENT (A)
1
8.5
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
0.1
Figure 18. Base−Emitter Turn On Voltage vs.
Collector Current
21
19
17
15
13
11
0
1
2
3
4
5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
6
0
5
Veb, EMITTER BASE VOLTAGE (V)
fT, CURRENT−GAIN−BANDWIDTH (MHz)
10 msec
1 sec
0.01
0.001
1
15
20
25
30
35
40
45
50
Figure 20. Output Capacitance vs. Collector
Base Voltage
1
0.1
10
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 19. Input Capacitance vs. Emitter Base
Voltage
IC, COLLECTOR CURRENT (A)
0.01
IC, COLLECTOR CURRENT (A)
Figure 17. Base−Emitter Saturation Voltage vs.
Collector Current
9
0.001
10
100
1000
VCE = 1.0 V
TA = 25°C
100
10
0.1
1
10
100
1000
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 21. Safe Operating Area
Figure 22. Current−Gain−Bandwidth Product
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MMBT4401LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT4401LT1/D