MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage VCEO Collector −Base Voltage VCBO MMBT2222L MMBT2222AL, SMMBT2222AL MMBT2222L MMBT2222AL, SMMBT2222AL Emitter −Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL Collector Current − Continuous Collector Current − Peak (Note 3) VEBO Value Unit Vdc 30 40 Vdc 60 75 3 1 2 SOT−23 CASE 318 STYLE 6 Vdc 5.0 6.0 IC 600 mAdc ICM 1100 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD RqJA PD Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 10 1 xxx M G G 1 xxx = 1P or M1B M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: MMBT2222LT1/D MMBT2222L, MMBT2222AL, SMMBT2222AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 − − Vdc − 10 Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222 MMBT2222A, SMMBT2222A MMBT2222 MMBT2222A, SMMBT2222A ICBO − − − − 0.01 0.01 10 10 mAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A, SMMBT2222A IEBO − 100 nAdc IBL − 20 nAdc 35 50 75 35 100 50 30 40 − − − − 300 − − − − − 0.4 0.3 − − 1.6 1.0 − 0.6 1.3 1.2 − − 2.6 2.0 250 300 − − − 8.0 − − 30 25 2.0 0.25 8.0 1.25 − − 8.0 4.0 50 75 300 375 Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A ICEX nAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 4) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4) (IC = 500 mAdc, VCE = 10 Vdc) (Note 4) Collector −Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMBT2222A only MMBT2222 MMBT2222A, SMMBT2222A MMBT2222 MMBT2222A, SMMBT2222A VCE(sat) MMBT2222 MMBT2222A, SMMBT2222A MMBT2222 MMBT2222A, SMMBT2222A VBE(sat) MMBT2222 MMBT2222A, SMMBT2222A − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 5) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222 MMBT2222A, SMMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo MMBT2222 MMBT2222A, SMMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A http://onsemi.com 2 Cibo hie hre hfe MHz pF pF kW X 10− 4 − MMBT2222L, MMBT2222AL, SMMBT2222AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 5.0 25 35 200 − 150 − 4.0 Unit SMALL−SIGNAL CHARACTERISTICS Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) MMBT2222A, SMMBT2222A hoe rb, Cc NF mmhos ps dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time (VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 Storage Time Fall Time ns ns 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 5. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 +16 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 200 0 0 -2 V 1 kW 1k -14 V CS* < 10 pF < 2 ns < 20 ns CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain http://onsemi.com 3 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBT2222L, MMBT2222AL, SMMBT2222AL 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 500 Figure 5. Turn −On Time 200 300 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 6.0 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. Turn −Off Time 10 8.0 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 4.0 IC = 50 mA 100 mA 500 mA 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 4 50 k 100 k f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) MMBT2222L, MMBT2222AL, SMMBT2222AL 30 CAPACITANCE (pF) 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 20 30 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 50 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.1 −55°C 25°C 0.001 0.01 0.1 1.1 1.0 0.9 1 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current 1.2 +0.5 VCE = 1 V 0 1.0 0.9 COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) 70 100 IC/IB = 10 1.2 150°C −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 0.3 0.2 50 1.3 IC/IB = 10 1.1 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 10. Current−Gain Bandwidth Product 1 0.01 2.0 0.001 0.01 0.1 -2.5 1 0.1 0.2 IC, COLLECTOR CURRENT (A) 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 14. Temperature Coefficients Figure 13. Base Emitter Voltage vs. Collector Current http://onsemi.com 5 500 MMBT2222L, MMBT2222AL, SMMBT2222AL 10 10 ms 100 ms 1 Thermal Limit IC (A) 1 ms 1s 0.1 0.01 0.001 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 100 VCE (Vdc) Figure 15. Safe Operating Area ORDERING INFORMATION Device MMBT2222LT1G MMBT2222ALT1G, SMMBT2222ALT1G MMBT2222LT3G MMBT2222ALT3G, SMMBT2222ALT3G Specific Marking Code Package Shipping† M1B SOT−23 (Pb−Free) 3000 / Tape & Reel 1P SOT−23 (Pb−Free) 3000 / Tape & Reel M1B SOT−23 (Pb−Free) 10,000 / Tape & Reel 1P SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MMBT2222L, MMBT2222AL, SMMBT2222AL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3 HE E c 1 2 e b 0.25 q A L A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 q 0° −−− 10 ° 0° −−− 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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