TLP624,TLP624−2,TLP624−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−2,TLP624−4 Programmable Controllers AC/DC−Input Module Telecommunication Unit in mm The TOSHIBA TLP624, −2 and −4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo−transistor. The TLP624−2 offers two isolated channels in an eight lead plastic DIP, while the TLP624−4 provides four isolated channels in a sixteen plastic DIP. • Collector−emitter voltage: 55V min. • Current transfer ratio Classi− fication TOSHIBA Marking of classi− fication Current Transfer Ratio(min) Ta = 25°C Ta=−25~75°C IF=0.5mA IF=1mA IF=1mA VCE=0.5V VCE=1.5V VCE=0.5V Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV,blank • Isolation voltage: 5000Vrms min. • UL recognized: UL1577, file No.E67349 • BSI approved: BS EN60065: 2002 Certificate No.7426 11−5B2 Weight: 0.26 g (typ.) BS EN60950-1: 2002 Certificate No.7427 • Note: Application type name for certification test, please use standard product type name, i.e. TLP624(BV): TLP624 TLP624−2(BV): TLP624−2 TOSHIBA Weight: 0.54 g (typ.) Pin Configurations (top view) TLP624–2 TLP624 TLP624–4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1. Anode 2. Cathode 3. Emitter 4. Collector 1,3 : Anode 2,4 : Cathode 5,7 : Emitter 6,8 : Collector 11−10C4 TOSHIBA 11−20A3 Weight: 1.1 g (typ.) 1,3,5,7: Anode 2,4,6,8: Cathode 9,11,13,15: Emitter 10,12,14,16: Collector 1 2007-10-01 TLP624,TLP624−2,TLP624−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol Forward current IF Detector LED Forward current detating ΔIF / °C TLP624 TLP624−2 TLP624−4 Unit 60 50 mA −0.7(Ta ≥ 39°C) −0.5(Ta ≥ 25°C) mA / °C Pulse forward current IFP Power dissipation(1 Circuit) PD 100 70 mW ΔPD / °C −1.0 −0.7 mW / °C Power dissipation derating (Ta ≥ 25°C, 1 Circuit) 1(100μs, pulse, 100pps) A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation(1 circuit) PC 150 100 mW Collector power dissipation derating (Ta ≥ 25°C, 1 Circuit) ΔPC / °C −1.5 −1.0 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Popr −55~100 °C Lead soldering temperature Tsol 260(10s) °C Total package power dissipation(1 Circuit) PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 Circuit) ΔPT / °C −2.5 −1.5 mW / °C Isolation voltage (Note 1) BVS 5000(AC, 1min., RH≤60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Symbol Min. Typ. Max. Unit VCC ― 5 24 V Forward current IF ― 1.6 20 mA Collector current IC ― 1 10 mA Topr −25 ― 75 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP624,TLP624−2,TLP624−4 Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR= 5V ― ― 10 μA Capacitance CT V = 0, f = 1MHz ― 30 ― pF V(BR)CEO IC = 0.5mA 55 ― ― V V(BR)ECO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA VCE = 24V, Ta = 85°C ― 2 50 μA V=0 , f=1MHz ― 12 ― pF Min. Typ. Max. Unit Collector−emitter breakdown voltage Emitter−collector Detector Symbol breakdown voltage Collector dark current Capacitance collector to emitter ICEO CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Current transfer ratio IC / IF IF = 1mA, VCE = 0.5V Rank BV 100 ― 1200 200 ― 1200 Low input CTR IC / IF IF = 0.5mA, VCE = 1.5V Rank BV 50 ― ― 100 ― ― IC = 0.5mA, IF = 1mA ― ― 0.4 IC = 1mA, IF = 1mA Rank BV ― 0.2 ― ― ― 0.4 Min. Typ. Max. (low) Collector−emitter VCE saturation voltage (sat) % % V Coupled Electrical Characteristics (Ta = −25°C~75°C) Characteristic Symbol Test Condition Current transfer ratio IC / IF IF = 1mA, VCE = 0.5V Rank BV Low input CTR IC / IF IF = 0.5mA, VCE = 1.5V Rank BV (low) 3 50 ― ― 100 ― ― ― 50 ― ― 100 ― Unit % % 2007-10-01 TLP624,TLP624−2,TLP624−4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance Test Condition VS = 0, f = 1MHz RS VS = 500V BVS Typ. Max. Unit ― 0.8 ― pF ― Ω 5×10 AC, 1minute Isolation voltage Min. 10 10 14 5000 ― ― AC, 1second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 8 ― ― 8 ― ― 10 ― ― 8 ― ― 10 ― ― 50 ― ― 300 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Test Condition VCC = 10V, IC = 2mA RL = 100Ω RL = 4.7 kΩ (Fig.1) VCC = 5 V, IF = 1.6mA Storage time tS Turn−off time TOFF μs μs Fig. 1 Switching time test circuit IF IF VCC tS RL VCE VCE VCC 4.5V 0.5V tON 4 tOFF 2007-10-01 TLP624,TLP624−2,TLP624−4 PC – Ta 200 80 160 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 100 TLP624 60 TLP624－2,－4 40 120 TLP624－2,－4 80 40 20 0 –20 TLP624 0 20 40 60 Ambient temperature 80 100 0 －20 120 Ta (°C) 0 20 40 Ambient temperature IFP – DR 5000 100 120 1.4 1.6 2.0 2.4 Ta (°C) Ta = 25 °C 50 Ta = 25 °C (mA) 30 1000 10 500 Forward current IF Allowable pulse forward current IFP (mA) 80 IF – V F 100 Pulse width ≦ 100 μs 3000 60 300 100 50 30 10 3 5 3 1 0.5 0.3 3 10－ 10－2 3 10－1 3 Duty cycle ratio 0.1 0.4 100 3 0.6 0.8 1.0 Forward voltage DR ΔVF / ΔTa – IF 1.2 VF (V) IFP – VFP 1000 IFP (mA) －2.4 Pulse forward current Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) －2.8 －2.0 －1.6 －1.2 －0.8 －0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 30 Pulse width ≦ 10 μs 500 Repetitive 300 Frequency = 100 Hz Ta = 25 °C 100 50 30 10 5 3 1 0 50 (mA) 0.4 0.8 1.2 Pulse forward voltage 5 1.6 VFP (V) 2007-10-01 TLP624,TLP624−2,TLP624−4 IC – VCE IC / IF – IF 4.0 500 Ta = 25 °C IF = 1.0 mA 3.5 300 (mA) 3.0 100 Collector current IC Current transfer ratio IC / IF (%) 1000 Ta = 25 °C 50 VCE = 5 V 30 VCE = 1.5 V VCE = 0.5 V 10 0.1 0.3 0.5 1 Forward current IF 3 5 10 0.8 mA 2.5 2.0 0.6 mA 1.5 0.5 mA 1.0 (mA) 0.4 mA 0.5 0.2 mA 0 0.1 0.3 0.5 1 3 Collector-emitter voltage 5 10 VCE (V) IC – IF 50 Ta = 25 °C 30 VCE = 5 V VCE = 1.5 V IC – Ta VCE = 0.5 V 30 VCE = 1.5 V 10 VCE = 0.5 V IF = 2 mA 10 2 mA 3 (mA) 5 1 Collector current IC Collector current IC (mA) 5 0.5 0.3 0.1 1 mA 3 0.5 mA 1 0.5 0.3 0.2 mA 0.05 0.1 0.03 0.05 0.01 0.1 0.3 0.5 1 Forward current IF 3 5 0.03 10 (mA) －20 0 20 40 Ambient temperature 6 60 80 Ta (°C) 100 2007-10-01 TLP624,TLP624−2,TLP624−4 ID – Ta Switching Time – RL 10 1 3000 VCE = 24 V 1000 5V (μA) 500 10－1 10 Switching time (μs) Collector dark current ID (ICEO) IF = 1.6 mA VCC = 5 V 10 V 100 Ta = 25 °C －2 300 tOFF 100 50 ts 3 10－ 30 tON 10－4 10 5 10－5 0 20 40 60 Ambient temperature 80 Ta 100 3 1 120 (°C) 3 5 Load resistance 7 30 10 RL 50 100 (kΩ) 2007-10-01 TLP624,TLP624−2,TLP624−4 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01