TLP185 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP185 Office Machine Programmable Controllers AC Adapter I/O Interface Board Unit: mm The TOSHIBA mini flat coupler TLP185 is a small outline coupler, suitable for surface mount assembly. TLP185 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. Since TLP185 is smaller than DIP package, it’s suitable for high-density surface mounting applications such as programmable controllers • Collector−emitter voltage: 80V (min) • Current transfer ratio: 50% (min) Rank GB: 100% (min) • Isolation voltage: 3750Vrms (min) • Operation Temperature:-55 to 110 ˚C • Safety Standards TOSHIBA UL approved: UL1577, File No. E67349 cUL approved: CSA Component Acceptance Service No. 5A 11-4M1S Weight: 0.08 g (Typ.) File No.E67349 • BSI approved: • Option (V4) type BS EN60065:2002, Certificate No. 9020 BS EN60950-1:2006, Certificate No. 9021 VDE approved: EN60747-5-2, Certificate No. 40009347 • (Note): When a EN60747-5-2 approved type is needed, Please designate “Option(V4)” Construction mechanical rating Creepage distance : 5.0 mm(min) Clearance : 5.0 mm(min) Insulation thickness : 0.4 mm(min) Pin Configuration(top view) 1 6 3 4 1: Anode 3: Cathode 4: Emitter 6: Collector 1 2012-02-14 TLP185 Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) Type TLP185 Classification Note1 IF = 5mA, VCE = 5V, Ta = 25°C Marking Of Classification Min Max Blank 50 400 Blank, YE, GR, GB, Y+, G, G+, B Rank Y 50 150 YE Rank GR 100 300 GR Rank GB 100 400 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B (Note1): Ex Rank GB: TLP185 (GB,E (Note) Application, type name for certification test, please use standard product type name, i, e. TLP185(GB,E: TLP185 2 2012-02-14 TLP185 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C -1.5 mA / °C IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Emitter−collector voltage VECO 7 V Forward current Detector LED Forward current derating (Ta ≥ 90°C) Pulse forward current (Note2) Collector current IC 50 mA Collector power dissipation PC 150 mW ΔPC / °C -1.5 mW / °C Tj 125 °C Operating temperature range Topr −55 to 110 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 200 mW ΔPT / °C -2.0 mW / °C BVS 3750 Vrms Collector power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: Pulse width ≤ 100 μs,f=100 Hz Note 3: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together. Recommended Operating Conditions (Note) Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 3 2012-02-14 TLP185 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.1 1.25 1.4 V Reverse current IR VR = 5 V — — 5 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 — — V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 48 V — 0.01 0.08 μA VCE = 48 V, Ta = 85°C — 2 50 μA V = 0, f = 1 MHz — 10 — pF MIn Typ. Max Unit 50 — 400 100 — 400 Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Off−state collector current Symbol IC / IF IC / IF (sat) VCE (sat) IC (off) Test Condition IF = 5 mA, VCE = 5 V Rank GB % IF = 1 mA, VCE = 0.4 V Rank GB — 60 — 30 — — IC = 2.4 mA, IF = 8 mA — — 0.3 IC = 0.2 mA, IF = 1 mA Rank GB — 0.2 — — — 0.3 VF = 0.7V, VCE = 48 V — 1 10 μA Min Typ. Max Unit — 0.8 — pF — Ω % V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS 1×10 12 10 14 3750 — — AC, 1 second, in oil — 10000 — DC, 1 minute, in oil — 10000 — 4 Vrms Vdc 2012-02-14 TLP185 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω Min Typ. Max — 5 — — 9 — — 9 — Turn−on time ton Turn−off time toff — 9 — Turn−on time ton — 2 — — 30 — — 70 — Storage time ts Turn−off time toff Fig. 1 RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) Unit μs μs Switching time test circuit IF IF RL tS VCC VCE VCE VCC 4.5V 0.5V tton ON 5 off ttOFF 2012-02-14 TLP185 I F - Ta P C - Ta 160 (mW) 100 140 120 PC I F (mA) 80 Collector power dissipation Forward current 60 40 20 This curve shows the maximum limit to the forward current. 0 -20 0 20 40 60 80 Ambient temperature Ta 100 120 100 80 60 40 This curve shows the 20 maximum limit to the collector power dissipation. 0 -20 0 20 80 Ta 100 120 (˚C) IF-VF 3000 100 Pulse width≤100μs (mA) Ta=25˚C 300 IF 500 Forward current IFP 1000 Pulse forward current (mA) 60 Ambient temperature (˚C) IFP-DR 100 50 30 This curve shows the maximum limit to the pulse forward current. 10 10-1 10-2 10-3 Duty cycle ratio 10 110˚C 85˚C 50˚C 25˚C 0˚C -25˚C -55˚C 1 0.1 100 0.6 0.8 DR 1 1.2 1.4 Forward voltage ∆ V F / ∆ Ta - I F 1.6 VF 1.8 2 (V) IFP – VFP 1000 -3.2 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0.1 1 Forward current 10 IF IFP (mA) -2.8 100 Pulse forward current Forward voltage temperature coefficient ΔVF /ΔTa (mV/°C) 40 10 Pulse width≤10μs Repetitive frequency=100Hz Ta=25°C 1 100 0.6 (mA) 1 1.4 1.8 2.2 Pulse forward voltage 2.6 VFP 3 3.4 (V) *The above graphs show typical characteristic. 6 2012-02-14 TLP185 IC-VCE IC-VCE 30 Ta=25˚C Ta=25˚C (mA) PC (max) 30 IC 50 30 20 40 15 Collector current Collector current IC (mA) 50 10 20 10 IF=5mA 0 20 50 30 20 15 10 10 5 I F= 2 m A 0 0 2 4 Collector-emitter voltage 6 VCE 8 10 0 0.2 0.4 0.6 0.8 Collector-emitter voltage (V) IC-IF VCE 1 (V) I C E O - Ta 10 100 Collector current IC (mA) Collector dark current ID (ICEO) (μA) Ta=25˚C 10 1 VCE=10V VCE=5V VCE=0.4V 1 Forward current 10 IF 0.1 VCE=48V 24V 10V 5V 0.01 0.001 0.0001 0.1 0.1 1 0 100 (mA) 20 40 60 Ambient temperature 80 100 Ta (°C) 120 IC/IF -IF 1000 VCE=10V VCE=5V Current transfer ratio IC / IF (%) VCE=0.4V 100 10 0.1 1 Forward current 10 IF 100 (mA) *The above graphs show typical characteristic. 7 2012-02-14 TLP185 V C E ( s a t ) - Ta I C - Ta 0.28 100 25 10 (mA) 0.20 Collector current IC Collector-Emitter saturation Voltage VCE(sat) (V) 0.24 0.16 0.12 0.08 IF=8mA, IC=2.4mA 0.04 5 10 1 1 IF=0.5mA IF=1mA, IC=0.2mA VCE=5V 0.00 -60 -40 -20 0 20 40 Ambient temperature 60 80 Ta 0.1 -60 -40 -20 100 120 (°C) Switching time - RL 0 20 40 60 Ambient temperature Ta 80 100 120 (°C) S w i t c h i n g t i m e - Ta 1000 10000 Ta=25˚C IF=16mA VCC=5V toff 1000 100 ts (μs) ts 100 Switching time Switching time (μs) toff 10 10 toff 1 IF=16mA VCC=5V RL=1.9kΩ ton 0.1 -60 -40 -20 1 1 10 Load resistance 100 RL (kΩ) 0 20 40 60 Ambient temperature Ta 80 100 120 (°C) *The above graphs show typical characteristic. 8 2012-02-14 TLP185 Soldering and Storage 1. Soldering 1.1 Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. 1) Using solder reflow ·Temperature profile example of lead (Pb) solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 240 210 160 140 less than 30s 60 to 120s Time (s) ·Temperature profile example of using lead (Pb)-free solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 260 230 190 180 60 to 120s 30 to 50s Time (s) 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) Please preheat it at 150°C between 60 and 120 seconds. Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated at most once. 9 2012-02-14 TLP185 2. Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. 10 2012-02-14 TLP185 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2012-02-14