TLP131 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP131 Unit in mm Office Machine Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP131 is a small outline coupler, suitable for surface mount assembly. TLP131 consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode. • Collector−emitter voltage: 80V (min.) • Current transfer ratio: 50% (min.) • Isolation voltage: 3750Vrms (min.) • UL recognized: UL1577, file No. E67349 Rank GB: 100% (min.) TLP131 base terminal is for the improvement of speed, reduction of dark current, and enable operation. TOSHIBA 11−4C2 Weight: 0.09 g (typ.) Pin Configurations (top view) 1 6 5 3 4 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base 1 2007-10-01 TLP131 Current Transfer Ratio Type TLP131 Classification Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Marking Of Classification Min. Max. (None) 50 600 BLANK, Y, Y , G, G , B, B , GB Rank Y 50 150 Y, Y Rank GR 100 300 G, G Rank GB 100 600 G, G , B, B , GB ■ ■ ■ ■ ■ ■ ■ Note: Application type name for certiffication test,please use standard product type name,i.e. TLP131(GB): TLP131 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse,100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VCEO 80 V Collector−base voltage VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse,100pps) ICP 100 mA Power dissipation PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW ΔPT / °C −2.0 mW / °C BVS 3750 Vrms Forward current LED Forward current derating (Ta≥53°C) Detector Collector−emitter voltage Power dissipation derationg (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., RH≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. 2 2007-10-01 TLP131 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR)CEO IC = 0.5mA 80 ― ― V Emitter−collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA VCE = 48V,Ta = 85°C ― 2 50 μA collector dark current ICEO Collector dark current ICER VCE = 48V,Ta = 85°C RBE = 1MΩ ― 0.5 10 μA Collector dark current ICBO VCB = 10V ― 0.1 ― nA DC forward current gain hFE VCE = 5V,IC = 0.5mA ― 400 ― ― Capacitance (collector to emitter) CCE V = 0, f = 1MHz ― 10 ― pF Min. Typ. Max. Unit 50 ― 600 100 ― 600 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Base photo−current Collector−emitter saturation voltage Off−state collector current Symbol Test Condition IC / IF IF = 5 mA, VCE = 5 V Rank GB IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB ― 60 ― 30 ― ― IF = 5mA,VCB = 5V ― 10 ― IPB VCE (sat) IC (off) IC = 2.4 mA, IF = 8 mA ― ― 0.4 IC = 0.2 mA, IF = 1 mA Rank GB ― 0.2 ― ― ― 0.4 IF = 0.7mA, VCE = 48 V ― 1 10 3 % % μA V μA 2007-10-01 TLP131 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) CS Isolation resistance Test Condition VS = 0, f = 1 MHz RS VS = 500 V BVS Typ. Max. Unit ― 0.8 ― pF ― Ω 10 5×10 AC, 1 minute Isolation voltage Min. 10 14 3750 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 25 ― ― 40 ― ― 2 ― ― 20 ― ― 30 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time ts Turn−off time tOFF Turn−on time tON Storage time ts Turn−off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ%) RBE = OPEN VCC = 5 V, IF = 16 mA (Fig.1) RL = 1.9 kΩ%) RBE = 220 kΩ VCC = 5 V, IF = 16 mA (Fig.1) μs μs μs Fig. 1 Switching time test circuit IF VCC IF tS RL RBE VCE VCE VCC 4.5V 0.5V tON 4 tOFF 2007-10-01 TLP131 IF – Ta PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 −20 0 40 20 60 100 80 Ambient temperature Ta 160 120 80 40 0 −20 120 0 40 20 Ambient temperature (°C) IFP – DR Pulse width ≦ 100μs (mA) 500 IF 300 Forward current Pulse forward current IFP (mA) 1000 100 50 30 10 −3 3 10 −2 3 10 Duty cycle ratio −1 3 10 0 DR 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1.0 ΔVF / ΔTa – IF 1.2 1.4 VF 1.6 1.8 2.6 3.0 (V) IFP – VFP −3.2 −2.8 (mA) −2.4 IFP 1000 −2.0 Pulse forward current Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) (°C) Ta = 25°C Forward voltage −1.6 −1.2 −0.8 −0.4 0.1 Ta 120 50 Ta = 25°C 10 3 100 80 IF – V F 100 3000 60 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 Pulse width ≦ 10μs 5 Repetitive 3 Frequency = 100Hz Ta = 25°C 1 50 1.0 IF (mA) 1.4 1.8 Pulse forward voltage 5 2.2 VFP (V) 2007-10-01 TLP131 IC – VCE IC – VCE 30 Ta = 25°C Ta = 25°C IF = 50mA (mA) 50mA 40 IC 30mA 20mA 15mA 40mA 30mA 20 30 Collector current Collector current IC (mA) 50 10mA PC(MAX.) 20 IF = 5mA 10 0 0 2 6 4 8 Collector–emitter voltage 20mA 10mA 5mA 10 2mA 0 0 10 0.2 IC / IF (%) Ta = 25°C SAMPLE A Current transfer ratio IC (mA) Collector current 5 10 3 SAMPLE B 1 VCE = 10V 0.5 VCE = 5V 0.3 VCE = 0.4V 0.1 0.3 0.5 1 3 5 10 Forward current 30 IF 50 VCE = 10V Ta = 25°C VCE = 0.4V 500 300 SAMPLE A 100 SAMPLE B 50 0.5 1 3 30 (μs) 10 IPB 30 Base photo current 100 5 3 VCC IF A 1 50kΩ 0.3 0.5 100kΩ 1 RBE (mA) IC Collector current Ta = 25°C 50 VCE = 5V 0.1 0.1 3 5 Forward current 10 30 50 100 IF (mA) IPB – IF 300 RBE = ∞ 500kΩ 5 Forward current (mA) IC – IF at RBE 0.3 VCE (V) VCE = 5V 0.3 100 100 0.5 1.0 IC / IF – IF 1000 50 30 0.8 Collector–emitter voltage VCE (V) I C – IF 100 0.6 0.4 10 30 50 10 IF (mA) VCB IF VCB = 0V VCB = 5V A 3 1 0.3 0.1 0.1 100 Ta = 25°C 0.3 0.5 1 3 Forward current 6 5 10 30 50 100 IF (mA) 2007-10-01 TLP131 ICEO – Ta VCE(sat) – Ta 101 0.24 IF = 5mA Ic = 1mA Collector–emitter saturation voltage VCE(sat) (V) 0.20 Collector dark current ICEO (μA) 100 VCE = 48V 24V 10V 10−1 5V 0.16 0.12 0.08 0.04 10−2 0 −40 −20 20 0 40 60 80 100 Ambient temperature Ta (℃) 10−3 10−4 0 20 60 40 100 80 120 Ambient temperature Ta (℃) IC – Ta 100 Switching Time – RL VCE = 5V 50 Ta = 25℃ IF = 16mA VCC = 5V RBE = 220kΩ 300 IF = 25mA 30 10mA 100 5 Switching time (μs) (mA) 10 Collector current IC 5mA 3 1mA 1 50 tOFF 30 ts 10 5 0.5 0.5mA 3 0.3 tON 0.1 -20 0 20 40 60 80 1 1 100 3 5 10 30 50 100 Load resistance RL (kΩ) Ambient temperature Ta (℃) 7 2007-10-01 TLP131 Switching Time – RBE 1000 Ta = 25℃ IF = 16mA VCC = 5V RL = 1.9kΩ 500 300 300 100 100 tOFF 50 ts 30 Ta = 25°C IF = 16mA 500 VCC = 5V Switching time (μs) Switching time (μs) Switching Time – RL 1000 ts 50 30 10 10 5 5 3 tOFF 3 tON 1 100k 300k 1M tON 3M 1 1 ∞ Base-emitter resistance RBE (Ω) 3 5 10 Load resistance RL 8 30 50 100 (Ω) 2007-10-01 TLP131 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01