TOSHIBA TIM8996-30

MICROWAVE POWER GaAs FET
TIM8996-30
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
„ HIGH POWER
P1dB=45.0dBm at 8.9GHz to 9.6GHz
„ HIGH GAIN
G1dB=7.0dB at 8.9GHz to 9.6GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain
SYMBOL
CONDITIONS
P1dB
Compression Point
Power Gain at 1dB Gain
( Ta= 25°C )
VDS= 10V
G1dB
Compression Point
Drain Current
IDS1
Power Added Efficiency
ηadd
Channel Temperature Rise
ΔTch
IDSset≅7.0A
f = 8.9 to 9.6GHz
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
UNIT
MIN.
TYP. MAX.
dBm
44.0
45.0
⎯
dB
6.0
7.0
⎯
A
⎯
10.0
11.5
%
°C
⎯
25
⎯
⎯
⎯
100
UNIT
MIN.
S
⎯
5.5
⎯
V
-0.7
-2.0
-4.5
A
⎯
20.0
⎯
V
-5
⎯
⎯
°C/W
⎯
1.0
1.1
Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
SYMBOL
gm
VGSoff
Saturated Drain Current
IDSS
Gate-Source Breakdown
Voltage
Thermal Resistance
VGSO
( Ta= 25°C )
CONDITIONS
VDS= 3V
IDS= 9.6A
VDS= 3V
IDS= 290mA
VDS= 3V
VGS= 0V
IGS= -290μA
Rth(c-c) Channel to Case
TYP. MAX.
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. July 2009
TIM8996-30
ABSOLUTE MAXIMUM RATINGS
( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
20
Total Power Dissipation (Tc= 25 °C)
PT
W
136
Channel Temperature
Tch
°C
175
Storage
Tstg
°C
-65 to +175
PACKAGE OUTLINE (7-AA03A)
Unit in mm
Unit in mm
c Gate
c Gate
d Source
d Source
e Drain
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2