MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL CONDITIONS P1dB Compression Point Power Gain at 1dB Gain ( Ta= 25°C ) VDS= 10V G1dB Compression Point Drain Current IDS1 Power Added Efficiency ηadd Channel Temperature Rise ΔTch IDSset≅7.0A f = 8.9 to 9.6GHz (VDS X IDS +Pin-P1dB) X Rth(c-c) UNIT MIN. TYP. MAX. dBm 44.0 45.0 ⎯ dB 6.0 7.0 ⎯ A ⎯ 10.0 11.5 % °C ⎯ 25 ⎯ ⎯ ⎯ 100 UNIT MIN. S ⎯ 5.5 ⎯ V -0.7 -2.0 -4.5 A ⎯ 20.0 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 1.0 1.1 Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO ( Ta= 25°C ) CONDITIONS VDS= 3V IDS= 9.6A VDS= 3V IDS= 290mA VDS= 3V VGS= 0V IGS= -290μA Rth(c-c) Channel to Case TYP. MAX. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. July 2009 TIM8996-30 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 °C) PT W 136 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (7-AA03A) Unit in mm Unit in mm c Gate c Gate d Source d Source e Drain e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2