MICROWAVE POWER GaAs FET TIM3438-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 3.4GHz to 3.8GHz n HIGH GAIN G1dB=12.5dB at 3.4GHz to 3.8GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ∆G CONDITIONS VDS= 10V f = 3.4 to 3.8GHz ηadd IM3 Two-Tone Test Po=31.5dBm IDS2 ∆Tch (Single Carrier Level) (VDS X IDS +Pin–P1dB) X Rth(c-c) UNIT dBm MIN. 41.5 TYP. MAX. 42.5 dB 11.5 12.5 A dB % dBc -42 4.4 38 -45 5.0 ±0.8 A °C 4.4 5.0 100 UNIT mS MIN. MAX. TYP. 3200 V -1.0 -2.5 -4.0 A 10 V -5 °C/W 1.4 2.0 Recommended Gate Resistance(Rg) : 100 Ω (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 5.2A VDS= 3V IDS= 70mA VDS= 3V VGS= 0V IGS= -210µA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM3438-16SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 13 Total Power Dissipation (Tc= 25 °C) PT W 75 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 2.5 MIN. Unit in mm 4 – C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.6±0.3 (2) 17.4± 0.4 8.0±0.2 (3) Drain (3) 20.4±0.3 5.5 MAX. 2.4± 0.3 0.2 MAX. 16.4 MAX. 1.4± 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2