MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain SYMBOL CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 41.5 42.5 dB 9.0 10.0 A 4.4 5.0 Compression Point Power Gain at 1dB Gain G1dB Compression Point VDS= 10V f = 5.3 to 5.9GHz Drain Current IDS1 Gain Flatness ∆G dB ±0.6 Power Added Efficiency ηadd % 36 3rd Order Intermodulation IM3 dBc -44 -47 Distortion Drain Current Channel Temperature Rise Two-Tone Test Po= 31.5dBm IDS2 (Single Carrier Level) A 4.4 5.0 ∆Tch (VDS X IDS +Pin-P1dB) X Rth(c-c) °C 80 UNIT MIN. mS 3600 V -1.0 -2.5 -4.0 A 10.5 V -5 °C/W 1.5 1.8 Recommended gate resistance(Rg) : Rg= 100 Ω (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200µA Rth(c-c) Channel to Case TYP. MAX. u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM5359-16UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 14 Total Power Dissipation (Tc= 25 °C) PT W 83.3 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 2.5 MIN. Unit in mm 4 – C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.6±0.3 (2) 17.4± 0.4 8.0±0.2 (3) Drain (3) 20.4±0.3 5.5 MAX. 2.4± 0.3 0.2 MAX. 16.4 MAX. 1.4± 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM5359-16UL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS≅4.4A Pout(dBm) Pin=32.5dBm 43 42 41 40 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 46 freq.=5.9GHz 45 VDS=10V IDS≅4.4A 44 80 70 Pout 42 60 41 50 40 40 ηadd 39 30 38 20 37 10 25 27 29 31 Pin(dBm) 3 33 35 ηadd(%) Pout(dBm) 43 TIM5359-16UL Power Dissipation vs. Case Temperature 100 PT (W) 80 40 0 0 40 80 120 160 200 Tc (°C) IM3 vs. Output Power Characteristics -10 VDS=10V IDS≅4.4A -20 freq.=5.9GHz ∆f=5MHz IM3(dBc) -30 -40 -50 -60 27 29 31 33 Pout(dBm) @Single carrier level 4 35 37