MICROWAVE POWER GaAs FET TIM8596-15 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=42.0dBm at 8.5GHz to 9.6GHz n HIGH GAIN G1dB=7.0dB at 8.5GHz to 9.6GHz n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. 42.0 dBm 41.0 dB 6.0 7.0 Output Power at 1dB Compression Point P1dB Power Gain at 1dB Compression Point Drain Current G1dB IDS A 4.5 Power Added Efficiency ηadd % 31 5.5 Channel Temperature Rise ∆Tch °C 100 UNIT mS MIN. TYP. 3000 MAX. V -1.5 -3.0 -4.5 A 10.0 11.5 V -5 °C/W 2.0 2.5 VDS = 9 V f = 8.5 – 9.6GHz VDS×IDS×Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25° C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITION VDS = 2V IDS = 4.8A VDS = 2V IDS = 145mA VDS = 3 V VGS= 0V IGS= -145 µA Rth(c-c) Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Jun. 2002 TIM8596-15 ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.5 Total Power Dissipation (Tc= 25 °C) PT W 60 Channel Temperature Tch °C 175 Storage Tstg °C -65 ∼ +175 • Unit in mm • Gate ‚ Source ƒ Drain ‚ ƒ 2.0 MIN. 3.2±0.3 ‚ 12.9±0.2 4-R3.0 2.0 MIN. PACKAGE OUTLINE (2-11C1B) 0.6±0.15 17.0±0.3 . 5.0 MAX. 2.6±0.3 0.2 MAX. 11.0 MAX. 1.7±0.3 0.1 +0.1 -0.05 21.5 MAX. HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2