TOSHIBA GT30J341

GT30J341
Discrete IGBTs
Silicon N-Channel IGBT
GT30J341
1. Applications
•
Motor Drivers
2. Features
(1)
Sixth generation
(2)
Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A)
(3)
High junction temperature: Tj = 175 (max)
(4)
FRD included between emitter and collector
3. Packaging and Internal Circuit
1: Gate
2: Collector (Heat sink)
3: Emitter
TO-3P(N)
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GT30J341
, unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±25
Collector current (DC)
(Tc = 25)
IC
59
Collector current (DC)
(Tc = 100)
IC
33
ICP
120
IF
46
Collector current (pulsed)
Diode forward current (DC)
(Tc = 25)
Diode forward current (DC)
(Tc = 100)
Diode forward current (pulsed)
Short circuit withstand time
(Note 1)
Collector power dissipation
33
60
tsc
5
µs
PC
230
W
Junction temperature
Tj
175

Storage temperature
Tstg
-55 to 175
Note:
(Tc = 25)
IF
IFP
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: VCC = 300 V, VGG = +15 V/0 V, RG = 24 Ω, Tj ≤ 150
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance (IGBT)
Symbol
Max
Unit
Rth(j-c)
0.65
/W
Junction-to-case thermal resistance (diode)
1.05
6. Electrical Characteristics
, unless otherwise specified)
25
6.1. Static Characteristics (Ta = 25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±25 V, VCE = 0 V


±100
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0 V


100
µA
V
Gate-emitter cut-off voltage
VGE(OFF) IC = 3 mA, VCE = 5 V
3.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
IC = 30 A, VGE = 15 V, Tc = 25

1.5
2.0
Collector-emitter saturation voltage
VCE(sat)
IC = 30 A, VGE = 15 V, Tc = 150

1.8

Diode forward voltage
VF
IF = 30 A, VGE = 0 V, Tc = 25

1.65
2.3
Diode forward voltage
VF
IF = 30 A, VGE = 0 V, Tc = 150

1.35

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GT30J341
, unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Input capacitance
Cies
VCE = 10 V, VGE = 0 V, f = 100 kHz

2900

pF
Switching time (turn-on delay time)
td(on)
Inductive load
VCC = 300 V, IC = 30 A,
VGG = +15 V/0 V, RG = 24 Ω
Tc = 25,
See Fig. 6.2.1, 6.2.2, 6.2.3

0.08

µs

0.06


0.2

Switching time (rise time)
tr
Switching time (turn-on time)
ton
Switching time (turn-off delay time)

0.28

tf

0.04

Switching time (turn-off time)
toff

0.38

Switching loss (turn-on switching loss)
Eon

0.8


0.6


0.08


0.08


0.25

Switching time (fall time)
td(off)
Switching loss (turn-off switching loss)
Eoff
Switching time (turn-on delay time)
td(on)
Switching time (rise time)
tr
Switching time (turn-on time)
ton
Switching time (turn-off delay time)

0.3

tf

0.06

Switching time (turn-off time)
toff

0.4

Switching loss (turn-on switching loss)
Eon

1.2

Switching loss (turn-off switching loss)
Eoff

0.8


50

Switching time (fall time)
Reverse recovery time
td(off)
Inductive load
VCC = 300 V, IC = 30 A,
VGG = +15 V/0 V, RG = 24 Ω
Tc = 150,
See Fig. 6.2.1, 6.2.2, 6.2.3
trr
IF = 30 A, di/dt = -100 A/µs
Fig. 6.2.1 Test Circuit of Switching Time
mJ
µs
mJ
ns
Fig. 6.2.2 Timing Chart of Switching Time
Fig. 6.2.3 Timing Chart of Switching Loss
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7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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GT30J341
8. Characteristics Curves (Note)
Fig. 8.1 IC - VCE
Fig. 8.2 IC - VCE
Fig. 8.3 IC - VCE
Fig. 8.4 IC - VCE
Fig. 8.5 VCE - VGE
Fig. 8.6 VCE - VGE
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Fig. 8.7 VCE - VGE
Fig. 8.8 VCE - VGE
Fig. 8.9 VCE(sat) - Tc
Fig. 8.10 ton, tr, td(on) - RG
Fig. 8.11 ton, tr, td(on) - IC
Fig. 8.12 toff, tf, td(off) - RG
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GT30J341
Fig. 8.13 toff, tf, td(off) - IIC
C
Fig. 8.14 Eon, Eoff - RG
Fig. 8.15 Eon, Eoff - IC
Fig. 8.16 VCE, VGE - Qg
Fig. 8.17 IF - VF
Fig. 8.18 Irr, trr - IF
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GT30J341
Fig. 8.19 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.20 Reverse Bias SOA
(Guaranteed Maximum)
Fig. 8.21 rth(t) - tw
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test.
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GT30J341
Package Dimensions
Unit: mm
Weight: 4.6 g (typ.)
Package Name(s)
TOSHIBA: 2-16C1S
Nickname: TO-3P(N)
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GT30J341
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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