PD - 96362A
AUTOMOTIVE MOSFET
AUIRF7341Q
HEXFET® Power MOSFET
Features
l
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Advanced Planar Technology
Ultra Low On-Resistance
Dual N Channel MOSFET
Surface Mount
Available in Tape & Reel
175°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free, RoHS Compliant
S1
G1
S2
G2
1
8
D1
2
7
D1
3
6
D2
4
5
D2
V(BR)DSS
55V
RDS(on) typ.
0.043Ω
max. 0.050Ω
ID
Top View
5.1A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
SO-8
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
e
e
c
d
Max.
Units
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 16,17,14a, 14b
V
mW/°C
V
mJ
A
mJ
-55 to + 175
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
RθJA
Junction-to-Ambient
f
Parameter
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/22/11
AUIRF7341Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Conditions
55
––– –––
V VGS = 0V, ID = 250μA
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.043 0.050
VGS = 10V, ID = 5.1A
Ω
VGS = 4.5V, ID = 4.42A
––– 0.056 0.065
1.0
–––
3.0
V VDS = VGS, ID = 250μA
10.4 ––– –––
S VDS = 10V, ID = 5.2A
VDS = 44V, VGS = 0V
––– –––
2.0
μA
––– –––
25
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 100
nA
––– ––– -100
VGS = -20V
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
29
2.9
7.3
9.2
7.7
31
12.5
780
190
66
44
4.4
11
–––
–––
–––
–––
–––
–––
–––
nC
ns
pF
Conditions
ID = 5.2A
VDS = 44V
VGS = 10V
VDD = 28V
ID = 1.0A
RG = 6.0Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
e
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
VSD
trr
Qrr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
Min. Typ. Max. Units
–––
–––
2.4
A
–––
–––
42
–––
–––
–––
–––
51
76
1.2
77
114
Conditions
MOSFET symbol
V
ns
nC
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 2.6A, VGS = 0V
TJ = 25°C,IF = 2.6A
di/dt = 100A/μs
e
S
e
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
VDD = 25V, starting TJ = 25°C, L = 10.7mH, RG = 25Ω, IAS = 5.2A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2
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AUIRF7341Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
†††
Class M2(+/-200V )
(per AEC-Q101-002)
Human Body Model
Class H1A(+/-500V )
(per AEC-Q101-001)
Charged Device
Model
Class C5(+/-1125V )
(per AEC-Q101-005)
RoHS Compliant
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRF7341Q
100
VGS
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
100
VGS
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
10
2.7V
1
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
2.7V
1
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
10
V DS = 25V
20μs PULSE WIDTH
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
4.0
100
Fig 2. Typical Output Characteristics
100
3.0
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
2.0
1
7.0
ID = 5.2A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF7341Q
VGS = 0V,
f = 1 MHZ
C iss
= Cgs + Cgd ,
SHORTED
C, Capacitance(pF)
1200
20
Cds
VGS , Gate-to-Source Voltage (V)
1400
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
800
600
400
Coss
200
Crss
0
1
10
12
8
4
0
10
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
40
50
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 ° C
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 25 ° C
1
V GS = 0 V
0.5
0.8
1.1
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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20
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
0.1
0.2
VDS = 44V
VDS = 27V
VDS = 11V
16
0
100
ID = 5.2A
1.4
10us
100us
10
1ms
10ms
1
TC = 25 ° C
TJ = 175 ° C
Single Pulse
0.1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF7341Q
6.0
RD
V DS
I D , Drain Current (A)
5.0
VGS
D.U.T.
RG
4.0
+
-V DD
10V
3.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
VDS
175
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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AUIRF7341Q
(Ω)
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
Ω
(
(Ω)
RDS(on), Drain-to -Source On ResistanceΩ)
0.070
0.060
0.050
0.040
ID = 7.1A
0.030
0.020
2.0
4.0
6.0
8.0
10.0
12.0
14.0
0.100
0.080
0.060
VGS = 4.5V
0.040
VGS = 10V
0.020
16.0
0
10
VGS, Gate -to -Source Voltage (V)
40
50
60
Current Regulator
Same Type as D.U.T.
QG
QGS
30
Fig 12. Typical On-Resistance Vs.
Drain Current
Fig 11. Typical On-Resistance Vs.
Gate Voltage
10
20
ID , Drain Current ( A )
50KΩ
QGD
12V
.2μF
.3μF
VG
+
V
- DS
D.U.T.
Charge
VGS
Fig 13a. Basic Gate Charge Waveform
3mA
IG
ID
Current Sampling Resistors
15V
L
D.U.T
RG
IAS
20V
tp
DRIVER
400
+
V
- DD
0.01Ω
320
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
I AS
Fig 14b. Unclamped Inductive Waveforms
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ID
2.1A
4.3A
5.1A
TOP
A
EAS , Single Pulse Avalanche Energy (mJ)
VDS
Fig 13b. Gate Charge Test Circuit
BOTTOM
240
160
80
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
175
( ° C)
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
7
AUIRF7341Q
100
Duty Cycle = Single Pulse
Avalanche Current (A)
10
1
0.01
0.1
0.05
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
0.01
0.001
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
140
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 5.1A
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy
Vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 14a, 14b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF7341Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
A
A1
MILLIMETERS
MIN
A
E
INCHES
DIM
B
MAX
.025 BASIC
0.635 B ASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF7341Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
10
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AUIRF7341Q
Ordering Information
Base part
AUIRF7341Q
www.irf.com
Package Type
SO-8
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7341Q
AUIRF7341QTR
11
AUIRF7341Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and
to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and
/ or customer specific requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
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voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create
a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly
or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
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acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
12
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