PD - 97640
AUTOMOTIVE GRADE
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AUIRF7342Q
Advanced Planar Technology
Low On-Resistance
Dual P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
HEXFET® Power MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
Top View
V(BR)DSS
RDS(on) max.
ID
-55V
0.105Ω
-3.4A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
SO-8
AUIRF7342Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Units
VDS
Drain-Source Voltage
Parameter
-55
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.4
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-2.7
-27
c
A
IDM
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
1.3
0.016
VGS
Gate-to-Source Voltage
± 20
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10μs
30
V
114
mJ
5.0
V/ns
-55 to + 150
°C
Max.
Units
62.5
°C/W
2.0
e
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
e
d
W
mW/°C
Thermal Resistance
RθJA
Junction-to-Ambient
g
Parameter
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
02/25/2011
AUIRF7342Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-55
–––
–––
–––
-1.0
3.3
–––
–––
–––
–––
–––
-0.054
0.095
0.150
–––
–––
–––
–––
–––
–––
–––
–––
0.105
0.170
-3.0
–––
-2.0
-25
-100
100
Conditions
V
VGS = 0V, ID = -250μA
V/°C Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.4A
Ω
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = -250μA
V
S
VDS = -10V, ID = -3.1A
VDS = -55V, VGS = 0V
μA
VDS = -55V, VGS = 0V, TJ = 55°C
VGS = -20V
nA
VGS = 20V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
3.0
8.4
14
10
43
22
690
210
86
38
4.5
13
22
15
64
32
–––
–––
–––
Min.
Typ.
Max.
nC
ns
pF
Conditions
ID = -3.1A
VDS = -44V
VGS = -10V, See Fig. 10
VDD = -28V
ID = -1.0A
RG = 6.0Ω
RD = 16Ω
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 9
f
f
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISM
c
VSD
trr
Qrr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 20mH,
RG = 25Ω, IAS = -3.4A. (See Figure 8)
ISD ≤ -3.4A, di/dt ≤ -150A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
2
–––
–––
Units
-2.0
A
–––
–––
-27
–––
–––
–––
–––
54
85
-1.2
80
130
Conditions
MOSFET symbol
V
ns
nC
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C,IF = -2.0A
di/dt = 100A/μs
e
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec.
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e
AUIRF7342Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
ESD
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Machine Model
Class M2 (+/- 200V)
AEC-Q101-002
Human Body Model
Class H1A (+/- 500V)
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 1125V)
AEC-Q101-005
RoHS Compliant
†††
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF7342Q
100
100
10
BOTTOM
-3.0V
1
≤60μs PULSE WIDTH
10
BOTTOM
-3.0V
1
≤60μs PULSE WIDTH
Tj = 25°C
Tj = -40°C
0.1
0.1
0.1
1
10
100
0.1
1000
1
10
100
1000
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
-3.0V
1
≤60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
4
1000
-I D, Drain-to-Source Current (A)
100
TOP
-ID, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
T J = -40°C
T J = 25°C
T J = 150°C
10
1
VDS = -25V
≤60μs PULSE WIDTH
0.1
1
2
3
4
5
6
-VGS, Gate-to-Source Voltage (V)
Fig 4. Typical Transfer Characteristics
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7
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
R DS (on) , Drain-to-Source On Resistance (Ω)
AUIRF7342Q
ID = -3.4 A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
0
2
0.45
0.35
0.25
I D = -3.4 A
0.15
0.05
5
8
11
-V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance vs. Gate
Voltage
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6
8
10
12
Fig 6. Typical On-Resistance Vs. Drain
Current
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to-Source On Resistance ( Ω )
Fig 5. Normalized On-Resistance
vs. Temperature
2
4
-ID , Drain Current (A)
TJ , Junction Temperature ( °C)
14
A
300
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
vs. Drain Current
5
150
AUIRF7342Q
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
960
Ciss
720
480
Coss
240
Crss
0
1
10
20
-VGS , Gate-to-Source Voltage (V)
1200
ID = -3.1A
16
12
8
4
0
100
0
-VDS , Drain-to-Source Voltage (V)
20
30
40
Fig 10. Typical Gate Charge vs.
Gate-to-Source Voltage
100
T J = -40°C
T J = 25°C
T J = 150°C
10
VGS = 0V
1.0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
-VSD, Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
-I D , Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
Fig 9. Typical Capacitance vs.
Drain-to-Source Voltage
100
VDS =-48V
VDS =-30V
VDS =-12V
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
-V DS , Drain-toSource Voltage (V)
Fig 12. Maximum Safe Operating Area
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AUIRF7342Q
3.5
-I D, Drain Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
Fig 13. Maximum Drain Current vs.
Ambient Temperature
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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7
AUIRF7342Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
F7342Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF7342Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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9
AUIRF7342Q
Ordering Information
Base part number
AUIRF7342Q
10
Package Type
Standard Pack
SO-8
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
2500
AUIRF7342Q
AUIRF7342QTR
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AUIRF7342Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to
discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or
customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject
to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate
design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an
unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may
be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids
all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR
is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create
a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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11