RU20T7G N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 20V/7A, RDS (ON) =12mΩ (Typ.) @ VGS=4.5V RDS (ON) =18mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged TSSOP-8 • ESD Protected • Lead Free and Green Available Applications • PWM Applications Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±8 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 2 A TA=25°C 28 TA=25°C 7 TA=70°C 5.5 TA=25°C 1.5 TA=70°C 0.96 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=4.5V) PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 ① A A 83.5 W °C/W www.ruichips.com RU20T7G Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU20T7G Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ VGS=0V, IDS=250µA V 20 VDS=20V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±8V, VDS=0V 30 0.5 0.7 µA 1.0 V ±10 uA VGS=4.5V, IDS=7A 12 16 mΩ VGS=2.5V, IDS=5.5A 18 25 mΩ 1 V Drain-Source On-state Resistance Diode Characteristics VSD ③ trr Diode Forward Voltage ISD=1A, VGS=0V Reverse Recovery Time 18 ns 8 nC 1.5 Ω ISD=1A, dlSD/dt=100A/µs Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=10V, Frequency=1.0MHz 1155 180 pF 140 6 VDD=10V, RL=1.4Ω, IDS=7A, VGEN=4.5V, RG=3Ω Turn-off Fall Time 12 ns 50 14 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 13 VDS=16V, VGS=4.5V, IDS=7A 1 nC 3.5 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 2 www.ruichips.com RU20T7G Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU20T7G Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU20T7G Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU20T7G Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 6 www.ruichips.com RU20T7G Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU20T7G RU20T7G TSSOP8 Tape&Reel 3000 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 7 www.ruichips.com RU20T7G Package Information TSSOP-8 SYMBOL MM INCH MIN MAX MIN MAX D 2.900 3.100 0.114 0.122 E 4.300 4.500 0.169 b 0.190 0.300 0.007 c 0.090 0.200 E1 6.250 6.550 A MM SYMBOL INCH MIN MAX MIN MAX A2 0.800 1.050 0.031 0.041 0.177 A1 0.050 0.150 0.002 0.006 0.012 e 0.004 0.008 L 0.246 0.258 H 0.047 θ 1.200 0.65 (BSC) 0.500 0.700 0.25(TYP) 0° 8° 0.026 (BSC( 0.020 0.028 0.01(TYP) 0° 8° ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 8 www.ruichips.com RU20T7G Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 9 www.ruichips.com