RU60E6H N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 60V/6A, RDS (ON) =31mΩ (Type) @ VGS=10V RDS (ON) =37mΩ (Type) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected SOP-8 • Lead Free and Green Available Applications • Power Management. • Switch Applications. Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 6 A TC=25°C 24 TC=25°C 6 TC=70°C 4.6 TC=25°C 2.5 TC=70°C 1.6 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 ① 50 A A W °C/W www.ruichips.com RU60E6H Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ③ Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA RU60E6H Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V 30 1.5 Unit V 60 VDS= 60V, VGS=0V Gate Threshold Voltage Max. 2 µA 2.7 V ±10 µA VGS= 10V, IDS=6A 31 35 mΩ VGS= 4.5V, IDS=4A 37 45 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ③ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=6A, VGS=0V ISD=6A, dlSD/dt=100A/µs 42 ns 73 nC 1.2 Ω ④ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS= 30V, Frequency=1.0MHz 1620 300 pF 105 12 VDD=30V, RL=30Ω, IDS=6A, VGEN= 10V, RG=6Ω Turn-off Fall Time 39 34 ns 13 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 19 VDS=48V, VGS= 10V, IDS=6A 4 nC 9 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 2 www.ruichips.com RU60E6H Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU60E6H Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU60E6H Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU60E6H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 6 www.ruichips.com RU60E6H Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU60E6H RU60E6H SOP-8 Tape&Reel 2500 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 7 www.ruichips.com RU60E6H Package Information SOP-8 SYMBOL MM INCH MIN MAX MIN MAX MM SYMBOL INCH MIN MAX MIN MAX A 1.350 1.750 0.053 0.069 E 3.800 4.000 0.150 0.157 A1 0.100 0.250 0.004 0.010 E1 5.800 6.200 0.228 0.244 A2 1.350 1.550 0.053 0.061 e b 0.330 0.510 0.013 0.020 L 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8° D 4.700 5.100 0.185 0.200 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 8 www.ruichips.com RU60E6H Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 9 www.ruichips.com