RUICHIPS RU8205C6

RU8205C6
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 20V/6A,
RDS (ON) =22mΩ (Typ.) @ VGS=4.5V
RDS (ON) =30mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
SOT-23-6
Applications
• Power Management
Absolute Maximum Ratings
Symbol
Dual N-Channel MOSFET
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±12
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
1.7
A
TA=25°C
24
TA=25°C
6
TA=70°C
4.5
TA=25°C
1.25
TA=70°C
0.8
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=4.5V)
PD
RθJA
②
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
①
A
A
W
100
°C/W
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RU8205C6
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU8205C6
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
③
VGS=0V, IDS=250µA
V
20
VDS=20V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±10V, VDS=0V
30
0.5
0.7
µA
1.5
V
±100
nA
VGS=4.5V, IDS=6A
22
30
mΩ
VGS=2.5V, IDS=5A
30
40
mΩ
1
V
Drain-Source On-state Resistance
Diode Characteristics
VSD
③
Diode Forward Voltage
ISD=1A, VGS=0V
④
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,VDS=0V,F=1MHz
1.8
VGS=0V,
VDS=10V,
Frequency=1.0MHz
580
Ω
pF
120
95
5
VDD=10V, RL=1.7Ω,
IDS=6A, VGEN=4.5V,
RG=6Ω
Turn-off Fall Time
11
ns
38
13
④
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
10
VDS=16V, VGS=4.5V,
IDS=6A
1.5
14
nC
3.4
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
2
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RU8205C6
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
Square Wave Pulse Duration (sec)
3
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RU8205C6
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
Tj - Junction Temperature (°C)
4
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RU8205C6
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
QG - Gate Charge (nC)
5
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RU8205C6
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
6
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RU8205C6
Ordering and Marking Information
Device
RU8205C6
①
Marking
4XYWW
Package
Packaging
Quantity
Reel Size
Tape width
SOT-23-6
Tape&Reel
3000
7’’
8mm
① The following characters could be different and means:
X
=Assembly site code
Y
=Year
WW =Work Week
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
7
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RU8205C6
Package Information
SOT-23-6
SYMBOL
MM
INCH
MIN
MAX
MIN
MAX
MM
SYMBOL
INCH
MIN
MAX
MIN
MAX
A
1.050
1.250
0.041
0.049
E
1.500
1.700
0.059
0.067
A1
0.000
0.100
0.000
0.004
E1
2.650
2.950
0.104
0.116
A2
1.050
1.150
0.041
0.045
e
b
0.300
0.500
0.012
0.020
e1
1.800
2.000
0.071
0.079
c
0.100
0.200
0.004
0.008
L
0.300
0.600
0.012
0.024
D
2.820
3.020
0.111
0.119
θ
0°
8°
0°
8°
0.950(BSC)
0.037(BSC)
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
8
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RU8205C6
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
9
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