BELLING BL8596

BL8596
LDO mode OVP with Integrated P-MOSFET
DESCRIPTION
FEATURES


The BL8596 is Li+ charger IC with integrated PMOSFET. The device is fabricated with advanced
CMOS technology to achieve maintaining low static
power dissipation over a very broad VCC operating
range.



The BL8596 integrates a P-MOSFET and Schottky
diode which is normally a discrete device
employed for conventional battery charging
design of mobile phone system. In addition to
that, BL8596 works like a LDO mode to keep
CHRIN voltage stable when ACIN goes high. And
thus it will not trigger the CHRIN pin over-voltage
protection when ACIN voltage increased to as
high as 15V.
A Built-In P-MOSFET
LDO mode makes CHRIN voltage stable around
5.5V
Range of operation input voltage: Max 15V
Charging current up to 1A
Environment Temperature: -20C~85C
APPLICATIONS

Cell phone and other portable device
APPLICATION CIRCUIT
The BL8596 provides complete Li+ charger
protections and saves the external MOSFET and
Schottky diode for the charger of cell phone’s PMIC.
It is available in a DFN2x2-8L package.
BL8596
The above features and small package make the
BL8596 an ideal part for cell phones applications.
ORDERING INFORMATION / PIN CONFIGURATION / MARKING
BL8596CKBTR
BL8596CB6TR
DFN2x2-8L
SOT23-6L
Top Marking
OBYW
YW means the year and week parts being manufactured, subjected to change. OB is the code of the product;
it will not be changed on any part.
www.belling.com.cn
1
BL8596
ABSOLUTE MAXIMUM RATING (Note1)
Parameter
ACIN Input Voltage (ACIN to GND)
CHRIN to GND Voltage
GATDRV to GND Voltage
OUT to GND Voltage
Output power limit, Iout x (VACIN-VOUT)
Maximum Junction Temperature
Storage Temperature
Maximum Lead Soldering Temperature, 10 Seconds
Symbol
VACIN
VCHRIN
VGATDRV
VOUT
PD
TJ
TSTG
TSDR
Note 1
Rate
-0.3~15
-0.3~6
-0.3~ VCHRIN
-0.3~6
0.75
150
-40 to 150
260
Unit
V
V
V
V
W
C
: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute maximum rating
conditions for extended periods may destroy the device.
THERMAL RESISTANCE RATING
Parameter
Junction-to-Ambient Resistance in Free Air
Device
DFN2x2-8
SOT23-6
(Note2)
Symbol
JA
JA
Typical
80
235
Unit
C /W
C /W
Note 2
: JA is measured with the component mounted on a high effective thermal conductivity test board in free air. The exposed pad of DFN2x2-8 is
soldered directly on the PCB.
THERMAL CONSIDERATION
Even though BL8596 can handle charge current larger than 1A, it is also limited by the power dissipation of
the package DFN2x2-8L. The DFN2x2 package has a thermal pad exposed, and it should be tightly soldered
to bottom PCB with a large coil area to dissipate the heat. In general, to have the BL8596 to work under a
safe condition, one should take DFN2x2 power limit as 0.75W, and if the dropout voltage is 1.5V, one is
suggested to set the charging current to be less than 500mA.
RECOMMENDED OPERATION CONDITIONS
Symbol
VACIN
Parameter
ACIN Input Voltage (ACIN to GND)
Range
Unit
4.5~10
Iout
TA
TJ
Ooutput Current
0~700
V
mA
Ambient Temperature
Junction Temperature
-40~85
C
C
-40~125
ELECTRICAL CHARACTERISTICS
Tj=25C
Symbol
Vth
Parameter
Conditions
Min
Typ
Max
Unit
Threshold Voltage
Ids=-1uA, Vds=Vgs
-1.0
-0.7
-0.4
V
VCHRIN2
CHRIN Voltage
VIN = 6.0 V, ICHRIN=50mA
5.0
5.5
6.0
V
IDss1
off-state leakage
VOUT=0, VIN=10V, VGATDRV=VCHRIN1
IDss2
reverse block leakage
VOUT=5V, VIN=0, VGATDRV=VCHRIN1=0V
Idson
On –state drain current
VIN=5V, VOUT=4V, VGATDRV=1V
Rdson
Vds/Idson
Vs=5V, Vg=1V, Vd=4V
www.belling.com.cn
2
-
-
1
uA
2
5
uA
0.9
1.2
1.5
A
0.5
0.75
1
ohm
BL8596
TYPICAL PERFORMANCE CHARACTERISTICST=25°C unless specified.
www.belling.com.cn
3
BL8596
PACKAGE OUTLINE
Package
DFN2x2-8
Devices per reel
3000
Unit
mm
Devices per reel
3000
Unit
mm
Package specification：
Package
SOT23-6
Package specification：
www.belling.com.cn
4