WILLAS FM120-M THRU 150mA SMALL SIGNAL SWITCHING DIODE - 100V 1N4148M FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V200V DO-34 PACKAGE Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 500 mWatts • High current capability, low forward voltage drop. FEATURES • High surge capability. for overvoltage protection. • Guardring • Fast switching Speed. Ultra high-speed switching. • • Electrically ldentical to Standerd JEDEC • Silicon epitaxial planar chip, metal silicon junction. • High Conductance • Lead-free parts meet environmental standards of 0.146(3.7) Unit: 0.130(3.3) DO-34 inch (mm) 0.012(0.3) Typ. .018(0.45) .014(0.35) 1.02(26.0)MIN. loss, high efficiency. VOLTAGE• Low power 100 Volts POWER • Axial lead MIL-STD-19500 Package ldeally Suited /228 for Automatic lnsertion. • Both normal andproduct Pb freefor product arecode available packing suffix :"G" • RoHS Normal : 80~95% Halogen Sn, free5~20% productPb for packing code suffix "H" Pb free:Mechanical 98.5% Sn above data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) .116(2.90) .092(2.30) • Epoxy : UL94-V0 rated flame retardant MECHANICAL Molded plastic, SOD-123H • Case : DATA , • Case: Molded Glass DO-34 • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 2026 • Terminals: SolderableMethod per MIL-STD-202E, Method 208 Polarity : Indicated • Polarity: •See Diagram Below by cathode band 0.031(0.8) Typ. Dimensions in inches and (millimeters) .087(2.20) Weight : Approximated 0.011 gram • Mounting• Position: Any • Pb-Free package is available MAXIMUM RATINGS AND ELECTRICAL RoHS product for packing code suffix ”G” Ratingsfree at 25℃ ambient temperature unless Halogen product for packing code suffix “H”otherwise specified. .067(1.70) 1.02(26.0)MIN. Mounting Position • Approx. •Weight: 0.09 grams : Any CHARACTERISTICS Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage 13 30 VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current RM S V oltage Operating Temperature Range IO S YM B O L IFSM VR RΘJA V RM CJ TJV RM S Temperature M aximStorage um A vera ge Forw ard CRange urrentatTa=25O C A nd f> 50H z TSTGIAV MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PA R A M E TE R Peak Forward Surge Current 8.3 ms single half sine-wave on rated load (JEDEC method) R eversuperimposed se Voltage Typical Thermal Resistance (Note 2) P eak R everse Voltage Typical Junction Capacitance (Note 1) S urge Forw ard C urrentatt< 1s and Tj=25 C CHARACTERISTICS O Maximum Average Reverse Current at @T A=25℃ M axim um Forw ard Voltage atIF =10m A Rated DC Blocking Voltage @T A=125℃ 28 35 42 40 50 60 (TJ =25°C unless otherwise noted) 1.0 1N4148M 30 10 100 115 150 120 200 56 70 105 140 80 100 150 200 67 V 40 120 90 -55 to +125 M ax im um Leakage C urrent 20V atV R = NOTES: atV R =75V 1Measured atO1CMHZ and applied reverse voltage of 4.0 VDC. V ,TJ= 150 atV R =20 Thermal M axim2-um C apacResistance itance (N oteFrom 1) Junction to Ambient V -55 to +150V 45 130 - 65 to +175 mA IR V F IR 0.50 500 0.70 1.0 0.85 mW 0.5 10 nA µA µA 25 5 50 pF TRR 4 ns M axim um Therm alR esistance RθJA 350 Junction Tem perature and S torage Tem perature R ange TJ,TS -55 to +150 NOTE: 1. CJ at2012-06 VR=0, f=1MHZ O C /W O C WILLAS ELECTRONIC CO 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω 2012-1 0.92 4 R everse R ecovery Tim e (N ote 2) 0.9 V CJ M axim um U N ITS 500 m AFM1150-MH FM1200IFSM FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH SYMBOL VFP TO T P ow eMaximum rD issipatioForward n atTam bVoltage = 25 O Cat 1.0A DC Dimensions in inches and (millimeters) 14 15 16 18 40 50 60 80 WILLAS ELECTRONIC CORP. WILLAS FM120-M 150mA SMALL SIGNAL SWITCHING DIODE - 100V 1N4148M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V200V DO-34 PACKAGE SOD-123+ PACKAGE THRU FM1200- Pb Free Prod Package outline Features RATING AND CHARACTERISTIC CURVES • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. 10 • High current capability, low forward voltage drop. • High surge capability. I FRM • Guardring for overvoltage protection. high-speed switching. • Ultra 10 planar chip, metal silicon junction. • Silicon epitaxial V=0 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 V=0.1 for packing code suffix "G" • RoHS product V=0.2 10 Halogen free product for packing code suffix "H" A• 0.146(3.7) 0.130(3.3) 2 I 0.012(0.3) Typ. v=tp / T T=1/fp tp I FRM t T 0.071(1.8) 0.056(1.4) 1 0 V=0.3 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant : Molded plastic, SOD-123H • Case 10 , 10 10 10 10 • Terminals :Plated terminals, solderable per MIL-STD-750 -1 -5 -4 -3 0.031(0.8) Typ. -2 10 0.031(0.8) Typ. -1 10 0 10 1 S tp Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Fig.1 ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION 10 4 10 3 10 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS T J =25 C FORWARD RESISTANCE, W f=1KHz Ratings at 25℃ ambient temperature unless otherwise specified. 3 Single 10 phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS FORWARD CURRENT, mA O 10 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 SYMBOL FM120-MH FM130-MH Marking10 Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 VDC 20 30 2 1 Maximum 10DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave 10 0 -2 -1 0 1 superimposed load (JEDEC 10 on rated10 10 method)10 10 Typical Thermal Resistance (Note 2) FORWARD CURRENT, mA RΘJA CJ Fig.2-DYNAMIC FORWARD RESISTANCE Operating VERSUS TemperatureFORWARD Range TJ CURRENT Storage Temperature Range 14 40 0 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 -1 10 -2 0 2 Typical Junction Capacitance (Note 1) 10 10 IO IFSM Maximum Average Forward Rectified Current 1 1.0 30 1 2 FORWARD VOLTAGE, VOLTS 40 120 -55 toFig.3 +125 FORWARD CHARACTERISTICS -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 VF 500 Maximum Average Reverse Current at @T A=25℃ NOTES: 300 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient O T J =25 C f=1KHz 0.85 0.9 0.9 0.5 10 1.0 0.9 0.8 100 0.7 0 100 200 0 AMBIENT TEMPERATURE Fig.4 2012-06 2012-1 0.70 IR @T A=125℃ Rated DC Blocking Voltage 1.1 0.50 CAPACITANCE, pF POWER DISSIPATION, mW Maximum Forward Voltage at 1.0A DC DERATING CURVE 2 4 6 8 1.0 REVERSE VOLTAGE, VOLTS Fig.5 TYPICAL JUNCTION CAPACITANCE WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. 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