WILLAS FM120-M+ DTA143ZE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Features • • SOT-523 0.071(1.8) 0.056(1.4) .067(1.70) .059(1.50) .035(0.90) .028(0.70) • • • 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 .014(0.35) .043(1.10) Typ Max Unit .035(0.90) -50 --V V VIN Input voltage --5.0 -100 IO Output MAXIMUM current -----CHARACTERISTICS mA RATINGS AND ELECTRICAL IC(MAX) -100 Pd --- specified. 150 --mW Ratings atPower 25℃ dissipation ambient temperature unless otherwise Tj Junction temperature --ć Single phase half wave, 60Hz, resistive of inductive--load. 150 T Storage temperature -55 --150 ć stg For capacitive load, derate current by 20% RATINGS Min ---30 .069(1.75) .057(1.45) Dimensions in inches and (millimeters) .010(0.25) .004(0.10)MIN. Polarity : Indicated by@ cathode Absolute• maximum ratings 25к band : Any Symbol • Mounting Position Parameter VCC Supply voltage • Weight : Approximated 0.011 gram SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 12 13 20 30 VRRM Symbol Min Maximum RMS Voltage Parameter VRMS Typ 14 Max 21Unit VI(off) -0.5 ----V Input voltage (VCC=-5V, IO=-100A) Maximum DC Blocking Voltage ---VDC --- 20 -1.3 30 V V (VO=-0.3V, IO=-5mA) I(on) VMaximum Output voltage = (IORectified /II -5mA/-0.25mA --- IO ---0.3 V Average Forward Current O(on) II = Input current (VI -5V) --- ---1.8 mA Surge Current(V8.3 ms single A IPeak Output current =-50V, VI half 0) sine-wave ---IFSM ---0.5 O(off) Forward CC= GI DCon current gain(JEDEC (VO=-5V, = IO -10mA) 80 ----superimposed rated load method) R1 Input resistance 3.29 4.7 6.11 K¡ Typical Thermal Resistance (Note 2) RΘJA R2/R1 Resistance ratio 8.0 10 12 Typical Junction Capacitance (Note 1) CJ Transition frequency f --250 --MHz T -55 to +125 Operating Temperature Range f=100MHz) TJ (VO=-10V, IO=5mA, Electrical Characteristics @Voltage 25к Maximum Recurrent Peak Reverse Storage Temperature Range 14 40 15 50 16 60 18 80 120 200 28 35 42 56 70 105 140 50 60 80 100 150 200 1.0 .008(0.20) .004(0.10) 30 40 120 .004(0.10)MAX. -55 to +150 - 65 to +175 TSTG CHARACTERISTICS 115 150 40 .014(0.35) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 10 100 .035(0.90) .028(0.70) • 0.146(3.7) 0.130(3.3) current is capability, low forward voltage drop. • High Pb-Free package available • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen freehigh-speed product for packing code suffix “H” switching. • Ultra Epoxy• Silicon meets epitaxial UL 94 V-0 flammability planar chip, metal rating silicon junction. parts meet 1 environmental standards of • Lead-free Moisure Sensitivity Level /228 the configuration of an inverter circuit Built-in MIL-STD-19500 bias resistors enable product for packinginput code suffix "G" • RoHS without connecting external resistors Halogen free product for packing code suffix "H"with complete The bias resistors consist of thin-film resistors Mechanical data isolation to allow negative biasing of the input. They also have the advantage of :almost completely UL94-V0 rated flameeliminating retardant parasitic effects. • Epoxy Only the on/off conditions need to be set for operation, making • Case : Molded plastic, SOD-123H device design easy , • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum Average Reverse Current at *Marking: @T A=25℃ E13 Rated DC Blocking Voltage @T A=125℃ IR 0.50 .006(0.15) 0.85 0.70 0.9 0.5 0.92 10 Dimensions in inches and (millimeters) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143ZE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features Characteristics design, excellent power dissipation offers • Batch processON INPUT VOLTAGE VI(ON) -10 -3 -1 VCC=-5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Ta=100 ℃ -1 0.071(1.8) 0.056(1.4) -0.3 Ta=25℃ -0.1 Mechanical data -0.3 SOD-123H -3 (mA) (V) -30 OFF Characteristics -10 IO better reverse leakage current and thermal resistance. V =-0.3V • Low profile surface mounted application inO order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of =25℃ a MIL-STD-19500T/228 RoHS product for packing code suffix "G" • Ta=100 ℃ Halogen free product for packing code suffix "H" OUTPUT CURRENT -100 -0.03 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant -0.1 : Molded-1plastic,-3SOD-123H -0.1• Case-0.3 -10 -100 -30 , OUTPUT CURRENT (mA) • Terminals :Plated terminals,I solderable per MIL-STD-750 -0.01 -0.2 -0.4 0.031(0.8) Typ. -0.6 -0.8 INPUT VOLTAGE VI(OFF) O -1.0 -1.2 Typ. 0.031(0.8) (V) Method 2026 • Polarity : Indicated by cathode band G —— I • Mounting PositionI : Any O • Weight : Approximated 0.011 gram 1000 300 Dimensions in inches and (millimeters) VO(ON) —— IO -1000 IO/II=20 VO=-5V (mV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -300 RATINGS 30 Maximum Recurrent Peak Reverse Voltage 10 VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 3 1 Peak Forward Surge Current-18.3 ms single half sine-wave -0.1 -10 -0.3 -3 superimposed on rated load (JEDEC method) I OUTPUT CURRENT Typical Thermal Resistance (Note 2) O -30 IFSM VR 120 200 21-30 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 -0.3 1.0 -330 -1 40 120 TJ -55 to +125 400 PD -30 -10 IO -100 (mA) -55 to +150 —— Ta - 65 to +175 f=1MHz Ta=25℃ 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH (mW) VF (pF) @T A=125℃ PD IR POWER DISSIPATION CO 115 150 TSTG Maximum Average Reverse Current at @T A=25℃ OUTPUT CAPACITANCE 18 Ta=25℃ 10 80 100 CJ Maximum Forward Voltage at 1.0A DC NOTES: 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 16 60 OUTPUT CURRENT CHARACTERISTICS Rated DC Blocking Voltage 15 50 RΘJA 14 40 -10 -0.1 -100 (mA) Typical Junction Capacitance (Note 1) Operating Temperature Range CO —— 12 Temperature Range Storage 13 30 IO Maximum Average Forward Rectified Current 8 V0 -100 Ta=100℃ FM180-MH FM1100-MH FM1150-MH FM1200-M FM140-MH FM150-MH FM160-MH SYMBOL FM120-MH FM130-MH Marking Code 10 OUTPUT VOLTAGE DC CURRENT GAIN GI Ratings at 25℃ ambient Ttemperature unless otherwise specified. =100℃ a 100 Single phase half wave, 60Hz, resistive of inductive load. T =25℃ For capacitive load, derate currenta by 20% 2- Thermal Resistance From Junction to Ambient 4 0.50 0.70 300 0.9 0.85 0.5 0.92 10 250 200 DTA143ZE 150 100 2 50 0 0 -0 2012-06 2012-0 -4 -8 -12 REVERSE BIAS VOLTAGE -16 VR (V) -20 0 25 50 75 100 125 150 T (℃ ) WILLAS ELECTRONIC COR AMBIENT TEMPERATURE a WILLAS ELECTRONIC CORP. WILLAS PNP Digital Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ DTA143ZE THRU FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1)low (2)forward voltage drop. G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High DTA143ZE –T for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 Storage life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Maximum Forward Voltage at 1.0A DC 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.