WILLAS FM120-M+ MMBD914LT1THRU High−Speed Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Features optimize board space. z RoHS product for packing code suffix "G" • Low power loss, high efficiency. free product for packing code voltage suffix "H" z Halogen capability, low forward drop. • High current z Moisture Sensitivity Level 1 capability. • High surge 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. • Guardring for overvoltage protection. MAXIMUM high-speed switching. • UltraRATINGS epitaxial planar chip, metal silicon junction. • Silicon Symbol Value Rating • Lead-free parts meet environmental standards of ReverseMIL-STD-19500 Voltage VR 100 /228 RoHS product for packing code suffix "G" • Forward Current IF 200 Halogen free product for packing code suffix "H" Peak Forward Surge Current IFM(surge) 500 0.071(1.8) 0.056(1.4) Unit Vdc SOT-23 mAdc mAdc Mechanical data 0.040(1.0) THERMAL CHARACTERISTICS • Epoxy : UL94-V0 rated flame retardant Characteristic Symbol Max Unit : Molded plastic, SOD-123H • Case Total Device Dissipation PD 225 mW, • Terminals :Plated terminals, solderable per MIL-STD-750 FR–5 Board (Note 1.) Method 2026 TA = 25°C Derate above 25°C • Polarity : Indicated by cathode band 0.031(0.8) Typ. 3 CATHODE 1 0.024(0.6) ANODE 0.031(0.8) Typ. MARKING DIAGRAM 1.8 mW/°C Dimensions in inches and (millimeters) Thermal Resistance, RqJA 556 °C/W Position : Any • Mounting Junction to Ambient • Weight : Approximated 0.011 gram Total Device Dissipation PD 300 mW Alumina Substrate (Note 2.)RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM TA = 25°C Ratings at 25℃ 2.4 mW/°C Derate aboveambient 25°C temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Thermal Resistance, RqJA 417 °C/W For Junction capacitive derate current by 20% to load, Ambient 5D 5D = Device Code Junction and StorageRATINGS TJ, Tstg SYMBOL –55 toFM120-MH °CFM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH ORDERING Marking Code 12 13 14 15 16 INFORMATION 18 10 115 120 Temperature Range +150 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Device Package Shipping 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Characteristic Symbol Min Max Unit Maximum DC Blocking Voltage 20 30 40MMBD914LT1 50 60SOT−23 80 3000/Tape 100 & Reel150 200 VDC OFF CHARACTERISTICS Maximum Average Forward Rectified Current IO Reverse Breakdown Voltage V(BR) 100 Peak (IForward mAdc)Current 8.3 ms single half sine-wave R = 100Surge IFSM superimposed on rated load (JEDEC method) Reverse Voltage Leakage Current Typical Resistance (Note 2) (VRThermal = 20 Vdc) = 75 Vdc) (VRJunction Typical Capacitance (Note 1) Operating Temperature Range Diode Capacitance (VRTemperature = 0, f = 1.0 MHz) Storage Range IR CT – – RΘJA 25 – CJ 5.0 – TJ TSTG 4.0 1.0 30 Vdc nAdc mAdc 40 120 -55 to +125 pF -55 to +150 - 65 to +175 Forward Voltage VF – 1.0 Vdc SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (IF = 10 mAdc)CHARACTERISTICS 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Reverse Recovery Time trr – 4.0 ns 0.5 Maximum Average Reverse Current at @T A=25℃ (IF = IR = 10 mAdc) (Figure 1) IR 10 @T A=125℃ Rated DC =Blocking Voltage 1. FR–5 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD914LT1 THRU High−Speed Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline 820 Ω Features design, excellent power dissipation offers • Batch process 2k +10 V µF 0.1thermal better reverse leakage current and resistance. I tp tr F mounted application in order to 100 surface µH • Low profile optimize 0.1 µFboard space. IF t SOD-123H trr 10% • Low power loss, high efficiency. low forward voltage drop. • High current capability,DUT • High surge capability. 50 Ω OUTPUT 50 Ω INPUT PULSE • Guardring for overvoltage protection.SAMPLING GENERATOR OSCILLOSCOPE • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of t 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 90% iR(REC) = 1 mA IR VR 0.071(1.8) OUTPUT PULSE 0.056(1.4) (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL MIL-STD-19500 /228 packing suffix "G" resistor adjusted for a Forward Current (IF) of 10 mA. • RoHS product forNotes: 1. Acode 2.0 kΩ variable Halogen free product code suffix "H"so IR(peak) is equal to 10 mA. Notes:for 2. packing Input pulse is adjusted Notes: 3. tp » trr Mechanical data Method 2026 TA = 85°Cby cathode band Polarity : Indicated 10 • • Mounting Position : Any • Weight : Approximated 0.011 gram TA = -40°C TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.1 Marking0.2 Code TA = 150°C TA = 85°C 0.1 TA = 55°C 0.01 T = 25°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MHA FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS 0.001 13 0 30 VRRM 1.212 20 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 0.4 0.6 0.8 Figure 2. Forward Voltage Maximum Average Forward Rectified Current 0.68 Peak Forward Surge Current 8.3 ms single half sine-wave C D H DIODE CAPACITANCE (pF) superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 0.64 Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 1.0 CHARACTERISTICS @T A=125℃ 0.52 0 120 200 35 42 56 70 105 140 50 60 80 100 150 200 Figure 3. Leakage Current RΘJA 40 120 CJ -55 to +125 -55 to +150 - 65 to +175 TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 50115 150 1.0 30 TJ 0.60 20 16 30 18 4010 14 10 15 40 60VOLTAGE 80 VR50 H REVERSE (VOLTS) 100 IO IFSM Maximum Forward Voltage at 1.0A DC 0.56 NOTES: 0.031(0.8) Typ. Dimensions TA = 125°Cin inches and (millimeters) 1.0 Maximum Recurrent Peak VFH Reverse FORWARDVoltage VOLTAGE (VOLTS) 0.040(1.0) 0.024(0.6) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.0 at 25℃ ambient temperature unless otherwise specified. Ratings I R H REVERSE CURRENT m( A) I FH FORWARD CURRENT (mA) 100 • Epoxy : UL94-V0 rated flame retardant Figure 1. Recovery Time Equivalent Test Circuit • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 10 0.50 0.70 0.9 0.92 0.5 IR 2.0 0.85 10 4.0 6.0 8.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. VRH REVERSE VOLTAGE (VOLTS) 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 Figure 4. Capacitance WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD914LT1THRU High−Speed Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H order to • Low profile surface mounted application inSOT-23 .006(0.15)MIN. optimize board space. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .122(3.10) • Guardring for overvoltage protection. • Ultra high-speed switching. .106(2.70) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .110(2.80) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .083(2.10) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .008(0.20) Method .080(2.04) 2026 .003(0.08) Dimensions in inches and (millimeters) • Polarity : Indicated .070(1.78) by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage VRRM .020(0.50) VRMS .012(0.30) Maximum DC Blocking Voltage 12 20 14 20 VDC .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half .004(0.10)MAX. wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 13 30 14 40 15 50 16 60 18 80 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 0.037 0.95 28 35 42 56 70 105 140 40 50 60 80 100 150 200 1.0 30 Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range IFSM RΘJA CJ 0.037 40 120 0.95 -55 to +125 TJ 120 200 30 Dimensions in inches and (millimeters) Peak Forward Surge Current 8.3 ms single half sine-wave 115 150 21 IO Maximum Average Forward Rectified Current 10 100 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH 0.079FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.035 @T A=125℃ 0.9 0.50 2.0 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 0.031 0.8 inches mm WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.