AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS Q1 30V Q2 30V 44A ID (at VGS=10V) 32A RDS(ON) (at VGS=10V) <4.9mΩ <2mΩ RDS(ON) (at VGS = 4.5V) <8.4mΩ <2.8mΩ 100% UIS Tested Application 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6B Top View Bottom View PIN1 Bottom View Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS 30 Gate-Source Voltage ±20 VGS TC=25°C Continuous Drain G Current Pulsed Drain Current C Avalanche Current IDM TA=25°C Continuous Drain Current 32 ID TC=100°C C Units V V 44 25 34 128 176 IDSM TA=70°C Max Q2 22 40 18 32 A A IAS 32 50 A Avalanche Energy L=0.05mH C EAS 26 63 mJ VDS Spike VSPIKE V 100ns TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0 : July 2012 Steady-State Steady-State RθJA RθJC 36 83 12 33 3.6 4.3 2.3 2.7 TJ, TSTG Symbol t ≤ 10s 36 31 -55 to 150 Typ Q1 29 56 3.3 www.aosmd.com Typ Q2 24 50 1.2 Max Q1 Max Q2 35 29 67 60 4 1.5 W W °C Units °C/W °C/W °C/W Page 1 of 10 AON6936 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.5 VGS=10V, ID=20A TJ=125°C IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 0.7 nA 2.5 V 4.9 6.5 8.4 mΩ 1 V 32 A 0.7 Diode Forward Voltage 100 4 125 Forward Transconductance VSD µA 5.3 6.7 gFS Output Capacitance 2 VGS=4.5V, ID=20A VDS=5V, ID=20A Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ mΩ S 984 pF 485 pF 66 pF 1.4 2.1 Ω 17.4 24 nC 8.3 12 nC 2.8 nC Qgd Gate Drain Charge 2.8 nC tD(on) Turn-On DelayTime 21.8 ns tr Turn-On Rise Time 21.8 ns tD(off) Turn-Off DelayTime 51.3 ns tf Turn-Off Fall Time 7.8 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 22 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : July 2012 www.aosmd.com Page 2 of 10 AON6936 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 VDS=5V 10V 100 80 4.5V 3.5V 80 ID(A) ID (A) 60 60 3V 125°C 40 40 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 1.5 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance On RDS(ON) (mΩ Ω) 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 1.6 VGS=4.5V 8 6 4 VGS=10V 2 VGS=10V ID=20A 1.4 17 5 2 VGS=4.5V ID=20A10 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 8 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=20A 1.0E+01 7 40 125°C 1.0E+00 6 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 2 5 4 1.0E-02 125°C 1.0E-03 25°C 25°C 3 1.0E-04 2 1.0E-05 3 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : July 2012 4 5 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6936 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=20A Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 900 600 2 Coss 300 Crss 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 10µs RDS(ON) limited TJ(Max)=150°C TC=25°C 100us 10.0 1ms DC 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 600 400 200 0.0 0 0.01 10 Zθ JC Normalized Transient Thermal Resistance 800 Power (W) ID (Amps) 100.0 1 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4°C/W 0.1 Single Pulse PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : July 2012 www.aosmd.com Page 4 of 10 AON6936 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 40 Current rating ID(A) Power Dissipation (W) 30 25 20 15 10 30 20 10 5 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=67°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : July 2012 www.aosmd.com Page 5 of 10 AON6936 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.3 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 1.8 nA 2.3 V 1.6 2 2 2.5 2.2 2.8 91 0.7 VGS=10V, VDS=15V, ID=20A 0.3 µA 100 mΩ mΩ S 1 V 44 A 4178 VGS=0V, VDS=15V, f=1MHz Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1979 pF 261 pF 0.7 1.1 Ω 63.7 86 nC 29 40 nC 10.6 nC Gate Drain Charge 10.5 nC Turn-On DelayTime 39.8 ns 28.5 ns 92.5 ns 15 ns 20.6 ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 46 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : July 2012 www.aosmd.com Page 6 of 10 AON6936 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 6V 3.5V 80 80 4.5V 60 60 125°C ID(A) ID (A) 3V 40 40 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 1.5 5 3.0 2.5 3 3.5 4 4.5 5 Normalized On On-Resistance 1.4 2.5 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 2.0 1.5 VGS=10V 1.0 0.5 VGS=10V ID=20A 1.2 17 5 VGS=4.5V ID=20A 2 10 1 0.8 0.0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 3 ID=20A 2.5 1.0E+01 125°C 40 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 2 1.0E-01 25°C 1.5 1.0E-02 25°C 1 1.0E-03 0.5 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : July 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6936 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=15V ID=20A Ciss 5000 Capacitance (pF) 8 VGS (Volts) 6 4 2 4000 3000 Coss 2000 Crss 1000 0 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 70 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 600 RDS(ON) limited 10µs 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 500 400 Power (W) ID (Amps) 100.0 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 0.0001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 Rev 0 : July 2012 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 10 JPage 8 of 10 AON6936 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 80 Current rating ID(A) Power Dissipation (W) 100 80 60 40 20 60 40 20 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 Zθ JA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 1000 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev 0 : July 2012 www.aosmd.com Page 9 of 10 AON6936 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 0 : July 2012 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10