AON6918 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6918 is well suited for use in compact DC/DC converter applications. VDS Q1 25V Q2 25V 85A ID (at VGS=10V) 60A RDS(ON) (at VGS=10V) <5.2mΩ <1.8mΩ RDS(ON) (at VGS = 4.5V) <7.8mΩ <2.7mΩ 100% UIS Tested 100% Rg Tested DFN5X6A Top View Bottom View S2 S2 S2 G2 PIN1 (S1/D2) D1 D1 D1 G1 D1 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Pulsed Drain Current C C Avalanche Energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev0 : Aug 2011 38 66 490 15 26.5 12 21 Steady-State Steady-State A 40 78 A 80 304 mJ 31 104 12.5 41.5 2 2.2 1.3 1.4 TJ, TSTG Symbol t ≤ 10s A EAS, EAR PDSM TA=70°C V IAS, IAR PD TC=100°C Units V 85 200 IDSM TA=70°C Avalanche Current ±20 60 IDM TA=25°C Max Q2 25 ID TC=100°C Continuous Drain Current Max Q1 VGS TC=25°C Continuous Drain CurrentG Bottom View RθJA RθJC -55 to 150 Typ Q1 25 50 3.1 www.aosmd.com Typ Q2 20 45 0.9 Max Q1 Max Q2 30 25 60 55 4 1.2 W W °C Units °C/W °C/W °C/W Page 1 of 10 AON6918 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 200 100 nA 2.3 V 4.3 5.2 6.6 8 VGS=4.5V, ID=20A 6.2 7.8 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime mΩ mΩ S 1 V 30 A 1040 1300 1560 pF VGS=0V, VDS=15V, f=1MHz 370 530 690 pF 10 35 60 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.7 2.6 Ω 17 21.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 1.7 VGS=10V, ID=20A Output Capacitance Units V 1 IGSS Coss Max 25 VDS=25V, VGS=0V VGS(th) RDS(ON) Typ 13 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 7.2 nC 3.9 nC 1.8 nC 5 ns 16 ns 20 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 16 21 4 26 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 31 39 47 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Aug 2011 www.aosmd.com Page 2 of 10 AON6918 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 VDS=5V 4V 10V 100 80 4.5V 6V 60 ID(A) ID (A) 80 60 40 40 3V 125°C 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 7 Normalized On-Resistance 1.8 VGS=4.5V 6 RDS(ON) (mΩ ) 4 5 VGS=10V 4 3 VGS=10V ID=20A 1.6 1.4 17 5 VGS=4.5V ID=20A 2 1.2 10 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 12 25 50 75 100 125 150 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 175 1.0E+02 ID=20A 1.0E+01 10 40 8 125°C IS (A) RDS(ON) (mΩ ) 1.0E+00 6 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 25°C 4 1.0E-04 2 1.0E-05 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev 0 : Aug 2011 www.aosmd.com Page 3 of 10 AON6918 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=15V ID=20A 8 Ciss Capacitance (pF) VGS (Volts) 1500 6 4 1000 Coss 500 2 Crss 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 1000.0 10µs RDS(ON) limited 800 10.0 1ms DC 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 600 400 200 0 0.0001 0.0 0.01 TJ(Max)=150°C TC=25°C 100us Power (W) 100.0 ID (Amps) 0 20 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 T 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Aug 2011 www.aosmd.com Page 4 of 10 AON6918 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 30 TA=100°C TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=125°C TA=150°C 25 20 15 10 5 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 70 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 TA=25°C 60 1000 50 17 5 2 10 Power (W) Current rating ID(A) 150 40 100 30 20 10 10 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 1 0.00001 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 100 1000 Rev 0 : Aug 2011 www.aosmd.com Page 5 of 10 AON6918 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 490 100 nA 2.3 V 1.5 1.8 2.2 2.8 VGS=4.5V, ID=20A 2.05 2.7 mΩ 1 V 85 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 110 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime mΩ S 3200 4000 4800 pF VGS=0V, VDS=15V, f=1MHz 1100 1680 2200 pF 20 65 110 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.7 1.1 Ω 52 63 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 1.7 VGS=10V, ID=20A Output Capacitance Units V 1 IGSS Coss Max 25 VDS=25V, VGS=0V VGS(th) RDS(ON) Typ 41 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 23 nC 9 nC 6 nC 7 ns 17 ns 33 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 18 23 7 28 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 60 75 90 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Aug 2011 www.aosmd.com Page 6 of 10 AON6918 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 3V 100 80 4.5V 80 60 ID(A) ID (A) 3.5V 60 40 40 125°C VGS=2.5V 20 20 25°C 0 0 0 1 2 3 4 1.5 5 2.5 2.5 3 Normalized On-Resistance 1.8 VGS=4.5V RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.0 VGS=10V 1.5 VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=20A 1.2 2 10 1 0.8 1.0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 6 1.0E+02 ID=20A 1.0E+01 5 40 1.0E+00 3 IS (A) RDS(ON) (mΩ ) 4 125°C 125°C 1.0E-01 25°C 1.0E-02 2 1.0E-03 1 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev 0 : Aug 2011 www.aosmd.com Page 7 of 10 AON6918 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=15V ID=20A Capacitance (pF) 6 VGS (Volts) Ciss 5000 8 4 2 4000 3000 Coss 2000 1000 Crss 0 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 60 1000.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1500 TJ(Max)=150°C TC=25°C 10µs RDS(ON) limited 1200 100µs 10.0 1ms DC 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) 100.0 ID (Amps) 30 900 600 300 0 0.0001 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.2°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 T 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Aug 2011 www.aosmd.com Page 8 of 10 AON6918 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C TA=125°C 100 TA=150°C 80 60 40 20 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 100 TA=25°C 80 1000 60 Power (W) Current rating ID(A) 150 40 20 17 5 2 10 100 10 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 1 0 0.00001 0.001 10 18 1000 Pulse 0.1 Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 1000 Rev 0 : Aug 2011 www.aosmd.com Page 9 of 10 AON6918 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds Rev 0 : Aug 2011 www.aosmd.com Page 10 of 10