AON6922 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6922 is well suited for use in compact DC/DC converter applications. Q1 25V VDS Q2 25V ID (at VGS=10V) 71A 85A RDS(ON) (at VGS=10V) <3.8mΩ <1.4mΩ RDS(ON) (at VGS = 4.5V) <4.8mΩ <1.8mΩ 100% UIS Tested 100% Rg Tested DFN5X6A Top View Bottom View S2 S2 S2 G2 (S1/D2) D1 D1 D1 D1 G1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage 25 Gate-Source Voltage ±12 VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C IDM TA=25°C 85 44 66 240 420 IDSM TA=70°C Units V V 71 ID TC=100°C Max Q2 18 31 14 25 A A Avalanche Current C IAS, IAR 40 78 A Avalanche Energy L=0.1mH C TC=25°C EAS, EAR 80 304 mJ Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 1: April 2011 Steady-State Steady-State 104 41.5 2 2.2 1.3 1.4 TJ, TSTG Symbol t ≤ 10s 31 12.5 RθJA RθJC -55 to 150 Typ Q1 25 50 3.1 www.aosmd.com Typ Q2 20 45 0.9 Max Q1 Max Q2 30 25 60 55 4 1.2 W W °C Units °C/W °C/W °C/W Page 1 of 10 AON6922 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=10V, VDS=5V 240 100 nA 1.7 V 3 3.8 4.3 5.4 VGS=4.5V, ID=20A 3.7 4.8 mΩ 1 V 30 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 125 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.2 VGS=10V, ID=20A Output Capacitance Units V 1 IGSS Coss Max 25 VDS=25V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 1560 1950 2340 pF VGS=0V, VDS=12.5V, f=1MHz 530 755 980 pF 20 70 120 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 21 26.5 32 nC Qg(4.5V) Total Gate Charge 9 11.2 13.4 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=12.5V, ID=20A 2.7 nC 4 nC 5.5 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12 15 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 20 25 30 VGS=10V, VDS=12.5V, RL=1.25Ω, RGEN=3Ω 3.5 ns 30 ns 4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: April 2011 www.aosmd.com Page 2 of 10 AON6922 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 80 VDS=5V 10V 100 4.5V 60 3.5V VGS=2.5V ID(A) ID (A) 80 60 40 40 125°C 20 20 25°C 0 0 0 1 2 3 4 1 5 1.5 5 2.5 3 Normalized On-Resistance 1.8 VGS=4.5V 4 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 VGS=10V 2 VGS=4.5V ID=20A 1.6 1.4 17 5 VGS=10V ID=20A 2 1.2 10 1 0.8 1 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 6 IS (A) RDS(ON) (mΩ ) 40 1.0E+00 8 125°C 1.0E-01 1.0E-02 125°C 4 1.0E-03 2 25°C 1.0E-04 0 25°C 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6922 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=12.5V ID=20A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 1500 1000 Coss 500 2 Crss 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 30 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 200 1000.0 10us RDS(ON) limited 160 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.1 1 VDS (Volts) 120 80 40 0.0 0.01 TJ(Max)=150°C TC=25°C 100us 10.0 Power (W) 100.0 ID (Amps) 5 10 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 T 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: April 2011 www.aosmd.com Page 4 of 10 AON6922 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 IAR (A) Peak Avalanche Current TA=25°C Power Dissipation (W) TA=100°C TA=125°C TA=150°C 30 20 10 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 125 150 10000 80 70 TA=25°C 60 1000 17 5 2 10 50 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 40 30 100 20 10 10 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0 1 Width (s) 10 18 0.00001 0.001 Pulse 0.1 1000 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 40 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: April 2011 www.aosmd.com Page 5 of 10 AON6922 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=10V, VDS=5V 420 100 nA 1.7 V 1.15 1.4 1.6 2 VGS=4.5V, ID=20A 1.4 1.8 mΩ 1 V 85 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 135 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.2 VGS=10V, ID=20A Output Capacitance Units V 1 IGSS Coss Max 25 VDS=25V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=12.5V, f=1MHz mΩ S 4550 5690 6830 pF 1730 2470 3210 pF 50 165 280 pF 0.4 0.8 1.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 52 65 78 nC Qg(4.5V) Total Gate Charge 20 26 32 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 19 24.5 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 55 68 82 VGS=10V, VDS=12.5V, RL=0.6Ω, RGEN=3Ω nC 7.4 nC 5.7 nC 9 ns 4.5 ns 60 ns 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: April 2011 www.aosmd.com Page 6 of 10 AON6922 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 80 VDS=5V 10V 100 4.5V 60 80 ID(A) ID (A) 2.5V 60 VGS=2V 40 40 125°C 20 25°C 20 0 0 0 1 2 3 4 1 5 2.0 2 2.5 1.8 1.5 Normalized On-Resistance RDS(ON) (mΩ ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 1.0 VGS=10V VGS=4.5V ID=20A 1.6 1.4 17 VGS=10V 5 ID=20A2 1.2 10 1 0.8 0.5 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 40 125°C 3 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 2 25°C 1.0E-01 1.0E-02 1.0E-03 1 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6922 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 Capacitance (pF) VGS (Volts) Ciss 6000 VDS=12.5V ID=20A 8 6 4 5000 4000 3000 Coss 2000 2 1000 0 0 10 20 30 40 50 60 Crss 0 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 1500 1000.0 10µs RDS(ON) limited 1200 100µs 10.0 1ms 10ms DC TJ(Max)=150°C TC=25°C 1.0 0.1 Power (W) ID (Amps) 100.0 TJ(Max)=150°C TC=25°C 900 600 300 0.0 0.01 0.1 1 VDS (Volts) 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.2°C/W 0.1 PD Single Pulse 0.01 0.001 0.00001 Ton T 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: April 2011 www.aosmd.com Page 8 of 10 AON6922 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C TA=125°C 100 TA=150°C 100 80 60 40 20 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 100 TA=25°C 1000 Power (W) Current rating ID(A) 80 60 40 100 10 20 0 1 0 25 50 75 100 125 150 0.00001 10 1 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 17 5 2 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 40 0.1 PD 0.01 Ton T Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev 1: April 2011 www.aosmd.com Page 9 of 10 AON6922 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: April 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10