AON6998

AON6998
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
• Trench Power αMOS Technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Applications
VDS
Q1
30V
Q2
30V
ID (at VGS=10V)
50A
82A
RDS(ON) (at VGS=10V)
< 5.2mΩ
< 2.6mΩ
RDS(ON) (at VGS=4.5V)
< 8.6mΩ
< 2.99mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
Top View
S2
S2
Bottom View
Top View
DFN5X6D
S2
Bottom View
G2
PHASE
PHASE
(S1/D2)
D1
D1
D1
D1
S1/D2
PIN1
S1/D2
G1
D1
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6998
DFN 5x6D
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
C
C
L=0.01mH
VDS Spike
C
10µs
A
54
180
19
26
15
21
IAS
38
72
A
EAS
7
26
mJ
V
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0 : December 2014
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
A
31
100
PD
TC=100°C
TA=25°C
Power Dissipation
V
82
VSPIKE
TC=25°C
Power Dissipation B
±12
50
IDSM
TA=70°C
Avalanche energy
±20
IDM
TA=25°C
Avalanche Current
Units
V
ID
TC=100°C
Continuous Drain
Current
Max Q2
30
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Max Q1
30
RθJA
RθJC
36
36
21
31
8
13
3.1
3.1
2
2
A
W
W
-55 to 150
Typ Q1
30
50
4.6
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Typ Q2
30
50
3.1
Max Q1
40
65
6
°C
Max Q2
40
65
4
Units
°C/W
°C/W
°C/W
Page 1 of 10
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.4
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
f=1MHz
±100
nA
2.2
V
4.3
5.2
6.3
7.6
6.8
8.6
mΩ
1
V
20
A
67
VGS=0V, VDS=15V, f=1MHz
0.6
µA
1.8
0.71
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
V
5
VGS=10V, ID=20A
VDS=5V, ID=20A
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
820
pF
340
pF
40
pF
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13
Qg(4.5V) Total Gate Charge
6.1
nC
2
nC
VGS=10V, VDS=15V, ID=20A
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.4
nC
tD(on)
Turn-On DelayTime
6.5
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
16.5
ns
17
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
2.5
ns
IF=20A, dI/dt=500A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
19
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2014
www.aosmd.com
Page 2 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
70
4V
60
50
50
4.5V
3.5V
10V
40
40
ID(A)
ID (A)
VDS=5V
60
30
125°C
30
20
25°C
20
10
10
VGS=3V
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
1.8
8
RDS(ON) (mΩ)
2
VGS=4.5V
6
4
VGS=10V
2
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
12
IS (A)
RDS(ON) (mΩ)
16
125°C
1.0E-02
8
25°C
1.0E-03
4
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: December 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=20A
1000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
800
600
200
0
5
10
15
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
500
10µs
RDS(ON)
limited
10µs
10.0
100µs
1ms
10ms
DC
1.0
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
400
Power (W)
100.0
10
5
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
ID (Amps)
Crss
0
0
ZθJC Normalized Transient
Thermal Resistance
Coss
400
TJ(Max)=150°C
TC=25°C
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.00001 0.0001 0.001
100
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2014
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Page 4 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
60
50
Current rating ID(A)
Power Dissipation (W)
20
15
10
5
40
30
20
10
0
0
0
25
50
75
100
125
0
150
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.1
0.01
PD
Single Pulse
Ton
0.001
0.0001
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: December 2014
www.aosmd.com
Page 5 of 10
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=250µA
100
±100
nA
1.9
V
2.1
2.6
3.1
3.8
VGS=4.5V, ID=20A
2.48
2.99
mΩ
167
0.5
0.7
V
30
A
1
TJ=125°C
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
mA
1.4
VDS=5V, ID=20A
Crss
V
TJ=55°C
Static Drain-Source On-Resistance
Output Capacitance
Units
0.5
VGS=10V, ID=20A
Coss
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
f=1MHz
0.9
mΩ
S
2150
pF
710
pF
70
pF
1.8
2.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
37.5
nC
Qg(4.5V) Total Gate Charge
17
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
5
nC
Qgd
Gate Drain Charge
5
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
3.5
ns
36
ns
6
ns
IF=20A, dI/dt=500A/µs
15.5
ns
nC
33
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2014
www.aosmd.com
Page 6 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
4.5V
80
80
3V
60
60
125°C
ID(A)
ID (A)
10V
40
25°C
40
VGS=2.5V
20
20
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
1.8
3
Normalized On-Resistance
4
RDS(ON) (mΩ)
2
VGS=4.5V
2
VGS=10V
1
VGS=10V
ID=20A
1.6
1.4
VGS=4.5V
ID=20A
1.2
1
0.8
0
0
5
10
15
20
25
0
30
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
125°C
6
IS (A)
RDS(ON) (mΩ)
8
25°C
1.0E-02
4
1.0E-03
2
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: December 2014
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=15V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
2000
1500
Coss
1000
500
0
Crss
0
0
10
20
30
40
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
10µs
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.0
0.01
TJ(Max)=150°C
TC=25°C
400
Power (W)
ID (Amps)
10µs
RDS(ON)
limited
0.1
ZθJC Normalized Transient
Thermal Resistance
20
500
10.0
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.000010.0001 0.001 0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2014
www.aosmd.com
Page 8 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
30
Current rating ID(A)
Power Dissipation (W)
40
20
10
60
40
20
0
0
0
25
50
75
100
125
0
150
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: December 2014
www.aosmd.com
Page 9 of 10
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: December 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10