AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6926 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Q2 "Low Side" MOSFET is an SRFET™ that features low RDS(ON) to reduce conduction losses as well as an integrated Schottky diode with low QRR and Vf to reduce switching losses. The AON6926 is well suited for use in compact DC/DC converter applications. Q1 30V Q2 30V RDS(ON) (at VGS=10V) 44A <11mΩ <8.5mΩ RDS(ON) (at VGS = 4.5V) <14mΩ <12mΩ VDS ID (at VGS=10V) 50A 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View PIN1 BottomView View Bottom Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage VGS Gate-Source Voltage ±20 Continuous Drain Current TC=25°C Pulsed Drain Current C Continuous Drain Current 44 ID TC=100°C IDM TA=25°C IDSM TA=70°C Max Q2 Units V ±20 V 30 50 28 32 100 140 11 12 9 10 A A Avalanche Current C IAS, IAR 27 15 A Avalanche Energy L=0.1mH C EAS, EAR 36 11 mJ 31 35 12.5 14 1.9 2.1 1.2 1.3 TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev0 : July 2010 t ≤ 10s Steady-State Steady-State RθJA RθJC -55 to 150 Typ Q1 29 56 3.4 www.aosmd.com Typ Q2 24 50 3 Max Q1 Max Q2 35 29 67 60 4 3.6 W W °C Units °C/W °C/W °C/W Page 1 of 1 AON6926 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 On state drain current VGS=10V, VDS=5V 100 VDS=0V, VGS= ±20V 100 TJ=125°C gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS=4.5V, ID=20A VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA 5 VGS=10V, ID=20A Coss V TJ=125°C Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS IS Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 2 nA 2.5 V A 8.8 11 12 15 11.2 14 mΩ mΩ 55 0.74 S 1 V 35 A 920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω 16 20 24 nC 7 9.5 11.4 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2.7 nC 5 nC 6.5 ns 2 ns 17 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 7 8.7 10.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 3.5 ns ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : July 2010 www.aosmd.com Page 2 of 10 AON6926 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 10V 80 100 4V 60 80 ID(A) ID (A) VDS=5V 4.5V 120 3.5V 60 40 125°C 40 20 VGS=3V 20 25°C 0 0 0 1 2 3 4 0.5 5 14 2.5 3.5 4.5 5.5 Normalized On-Resistance 1.6 12 RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 10 8 VGS=10V 6 VGS=10V ID=20A 1.4 17 5 2 10 1.2 VGS=4.5V ID=20A 1 0.8 4 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 25 ID=20A 1.0E+01 20 40 15 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 10 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 5 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 4 of 10 AON6926 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=20A 1400 Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 1000 800 600 400 2 Coss 200 0 2 4 6 8 10 12 14 16 18 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 100.0 160 10µs RDS(ON) limited 10.0 100us DC 1.0 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 VDS (Volts) Power (W) 200 ID (Amps) 1000.0 10 1 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TC=25°C 80 40 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W PD 0.1 Ton 0.01 0.00001 30 120 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Crss 0 0 Single Pulse 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: July 2010 www.aosmd.com Page 5 of 10 AON6926 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 35 IAR (A) Peak Avalanche Current TA=25°C 30 Power Dissipation (W) TA=100°C TA=125°C TA=150°C 25 20 15 10 5 0 10 0.000001 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 50 10000 40 1000 TA=25°C Power (W) Current rating ID(A) 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 ZθJA Normalized Transient Thermal Resistance 1 0.1 10 1000 0 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 150 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=67°C/W 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: July 2010 www.aosmd.com Page 6 of 10 AON6926 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 On state drain current VGS=10V, VDS=5V 140 TJ=125°C 100 VDS=0V, VGS= ±20V 12 VGS=4.5V, ID=20A 9.3 12 VDS=5V, ID=20A 50 Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A V A 9.8 TJ=125°C nA 2.4 8.5 gFS Output Capacitance 1.9 6.9 Static Drain-Source On-Resistance mA 100 VGS=10V, ID=20A RDS(ON) Units V 0.5 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ 0.5 mΩ mΩ S 0.7 V 40 A 900 1130 1360 pF 320 465 605 pF 12 40 70 pF 0.35 0.7 1.1 Ω 12 16 20 nC 6 8 10 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 3 nC 3 nC 6 ns 4 ns 19 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 18 23 28 3 ns ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : July 2010 www.aosmd.com Page 3 of 10 AON6926 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 80 60 60 3.5V ID(A) ID (A) VDS=5V 4V 80 40 40 125°C VGS=3V 20 0 0 0 1 2 3 4 1 5 2 15 4 5 Normalized On-Resistance 1.8 12 VGS=4.5V RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 9 6 VGS=10V 3 0 1.6 VGS=10V ID=20A 1.4 17 5 2 VGS=4.5V 10 1.2 ID=20A 1 0.8 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 125°C 1.0E+00 15 IS (A) RDS(ON) (mΩ) 25°C 20 125°C 10 1.0E-01 25°C 1.0E-02 1.0E-03 5 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0 : July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6926 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 10 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=20A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 Crss 200 0 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 18 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 10µs RDS(ON) limited 100µs 1ms 10ms DC 1.0 Power (W) ID (Amps) 100.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 30 0.1 1 VDS (Volts) 10 1 TJ(Max)=150°C TC=25°C 120 80 40 10 0 0.0001 100 0.001 0.01 1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=3.6°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 200 1000.0 10.0 5 Single Pulse 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0 : July 2010 www.aosmd.com Page 8 of 10 AON6926 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 35 Power Dissipation (W) IAR (A) Peak Avalanche Current TA=25°C TA=100°C TA=125°C TA=150°C 30 25 20 15 10 5 0 10 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 125 150 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 30 20 17 5 2 10 100 10 10 0 0 25 50 75 100 125 150 1 0.00001 ZθJA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) TCASE (°C) Figure 14: Current De-rating (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 0.001 0.0001 Ton Single Pulse 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev0 : July 2010 www.aosmd.com Page 9 of 10 AON6926 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: July 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 10 of 10