AOSMD AO8801A

AO8801A
20V P-Channel MOSFET
General Description
Product Summary
The AO8801A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
ID (at VGS=-10V)
-20V
-4.5A
RDS(ON) (at VGS= -4.5V)
< 42mΩ
VDS
RDS(ON) (at VGS= -2.5V)
< 54mΩ
RDS(ON) (at VGS= -1.8V)
< 68mΩ
ESD Protected
Top View
D1
TSSOP8
Bottom View
D2
Top View
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
G1
G2
S1
S2
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 1: Sep 2011
Steady-State
Steady-State
A
1.5
W
0.96
TJ, TSTG
Symbol
t ≤ 10s
V
-30
PD
TA=70°C
±8
-3.6
IDM
TA=25°C
Units
V
-4.5
ID
TA=70°C
Maximum
-20
RθJA
RθJL
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-55 to 150
Typ
63
101
64
°C
Max
83
130
83
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO8801A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µΑ
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-30
TJ=55°C
-5
±10
µA
V
35
42
49
59
VGS=-2.5V, ID=-4A
43
54
mΩ
VGS=-1.8V, ID=-3A
54
68
mΩ
20
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-4.5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
µA
-0.9
gFS
Crss
Units
-0.57
VGS=-4.5V, ID=-4.5A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-4.5A
A
-0.64
mΩ
S
-1
V
-2
A
905
pF
600
751
80
115
150
pF
48
80
115
pF
6
13
20
Ω
7.4
9.3
11
nC
0.8
1
1.2
nC
1.3
2.2
3.1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-4.5A, dI/dt=500A/µs
20
26
32
Qrr
Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs
40
51
62
VGS=-4.5V, VDS=-10V, RL=2.2Ω,
RGEN=3Ω
13
ns
9
ns
19
ns
29
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Sep 2011
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Page 2 of 5
AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
-8V
15
-4.5V
VDS=-5V
35
-3.0V
12
30
-2.5V
9
-ID(A)
-ID (A)
25
20
-2.0V
15
10
3
5
125°C
25°C
VGS=-1.5V
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
5
80
0.5
1
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
Normalized On-Resistance
1.60
70
VGS=-1.8V
RDS(ON) (mΩ
Ω)
6
60
50
VGS=-2.5V
VGS=-4.5V
40
30
ID=-4.5A, VGS=-4.5V
1.40
ID=-4A, VGS=-2.5V
1.20
ID=-3A, VGS=-1.8V
1.00
0.80
20
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
120
1.0E+01
ID=-4.5A
1.0E+00
100
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
80
60
125°C
125°C
25°C
1.0E-02
1.0E-03
40
1.0E-04
25°C
1.0E-05
20
0
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Sep 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-10V
ID=-4.5A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
200
Crss
0
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
12
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
limited
100µs
1ms
1.0
10ms
20
10
100ms
DC
0.1
Power (W)
10µs
-ID (Amps)
20
10s
TJ(Max)=150°C
TA=25°C
0
0.0
0.001
0.01
0.1
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=130°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Sep 2011
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Page 4 of 5
AO8801A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s
RL
V ds
t o ff
to n
Vgs
-
DUT
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10%
V ds
D iode R e covery Te st C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
Vds Isd
V gs
Ig
Rev 1: Sep 2011
L
-Isd
+ V dd
t rr
dI/dt
-I R M
V dd
VDC
-
-I F
-Vds
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Page 5 of 5