AO3442 100V N-Channel MOSFET General Description Product Summary The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 1A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 630mΩ RDS(ON) (at VGS=4.5V) < 720mΩ SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Jun 2012 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V 4 PD TA=70°C ±20 0.8 IDM TA=25°C B Units V 1 ID TA=70°C C Maximum 100 RθJA RθJL www.aosmd.com °C -55 to 150 Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3442 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 TJ=55°C ±100 nA 2.3 2.9 V 514 630 983 1200 VGS=4.5V, ID=0.8A 554 720 Static Drain-Source On-Resistance 1.7 4 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=1A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.9 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units µA 5 VGS=10V, ID=1A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz mΩ mΩ S 1.2 V 1 A 100 pF 13 pF 5 pF 5 7.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 2.8 6 nC Qg(4.5V) Total Gate Charge 1.5 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=1A 2.5 0.4 nC 0.8 nC 5 ns 4 ns 12 ns 5 ns 52 ns nC VGS=10V, VDS=50V, RL=50Ω, RGEN=3Ω IF=5.6A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=5.6A, dI/dt=100A/µs 60 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jun 2012 www.aosmd.com Page 2 of 5 AO3442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 5 VDS=5V 10V 6V 2.5 5V 4 4.5V 2 ID (A) ID(A) 3 2 1.5 3.5V 1 1 125°C 25°C 0.5 VGS=3.0V 0 0 0 1 2 3 4 0 5 1200 2 3 4 5 6 Normalized On-Resistance 2.4 1000 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 800 600 VGS=10V 400 200 2.2 VGS=10V ID=1A 2 1.8 17 5 2 10 1.6 1.4 1.2 VGS=4.5V ID=0.8A 1 0.8 0 0 0.5 0 1 1.5 2 2.5 3 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1200 1.0E+01 ID=1A 1.0E+00 40 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 900 600 125°C 1.0E-02 25°C 1.0E-03 25°C 300 1.0E-04 1.0E-05 0 2 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jun 2012 4 10 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 160 VDS=50V ID=1A 140 8 Capacitance (pF) VGS (Volts) 120 6 4 Ciss 100 80 60 40 Crss 2 Coss 20 0 0 0 0.5 1 1.5 2 2.5 Qg (nC) Figure 7: Gate-Charge Characteristics 3 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 10000 10.0 TA=25°C 10µs ID (Amps) 100µs 1ms 0.1 DC TJ(Max)=150°C TA=25°C 0.0 Power (W) 1000 RDS(ON) limited 1.0 100 10ms 10 10s 1 1E-05 0.01 0.1 1 10 VDS (Volts) 100 0.001 0.1 10 1000 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jun 2012 www.aosmd.com Page 4 of 5 AO3442 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Jun 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5