AOSMD AO4821

AO4821
12V Dual P-Channel MOSFET
General Description
Product Summary
The AO4821 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch.
ID (at VGS=-4.5V)
VDS
-12V
-9A
RDS(ON) (at VGS=-4.5V)
< 19mΩ
RDS(ON) (at VGS =-2.5V)
< 24mΩ
RDS(ON) (at VGS =-1.8V)
< 30mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D1
1
Bottom View
D2
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
G1
D1
D1
Rg
Rg
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 4: Nov 2010
Steady-State
Steady-State
A
2
W
1.28
TJ, TSTG
Symbol
t ≤ 10s
V
-60
PD
TA=70°C
±8
-7
IDM
TA=25°C
Units
V
-9
ID
TA=70°C
Maximum
-12
RθJA
RθJL
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°C
-55 to 150
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4821
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-12
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.35
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-60
TJ=55°C
-5
VDS=0V, VGS= ±8V
±10
VGS=-4.5V, ID=-9A
Static Drain-Source On-Resistance
TJ=125°C
Gate Drain Charge
Turn-On DelayTime
tr
Turn-On Rise Time
-0.56
S
-1
V
-3
A
1390
1740
2100
pF
230
334
435
pF
120
200
280
pF
VGS=0V, VDS=0V, f=1MHz
0.9
1.3
1.7
kΩ
15
19
23
nC
VGS=-4.5V, VDS=-6V, ID=-9A
3.6
4.5
5.4
nC
5.3
7.4
nC
VGS=0V, VDS=-6V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
tD(on)
mΩ
mΩ
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Qgd
27
45
IS=-1A,VGS=0V
Gate Source Charge
22
mΩ
Maximum Body-Diode Continuous Current
Qgs
19
30
Diode Forward Voltage
Gate resistance
16
24
IS
Rg
V
A
23
VSD
Reverse Transfer Capacitance
-0.85
µA
19
VDS=-5V, ID=-9A
Crss
-0.53
µA
VGS=-2.5V, ID=-8A
Forward Transconductance
Output Capacitance
Units
VGS=-1.8V, ID=-6A
gFS
Coss
Max
V
VDS=-12V, VGS=0V
IDSS
RDS(ON)
Typ
3
VGS=-4.5V, VDS=-6V, RL=0.67Ω,
RGEN=3Ω
240
ns
580
ns
7
µs
4.2
µs
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-9A, dI/dt=500A/µs
18
22
26
Qrr
Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/µs
14
17
20
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Nov 2010
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Page 2 of 5
AO4821
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
-4.5V
-2.5V
50
VDS=-5V
50
-3V
40
40
-ID(A)
-ID (A)
-2V
30
20
30
20
125°C
VGS=-1.5V
10
0
0
0
1
2
3
4
5
0
0.5
1.5
2
2.5
3
1.6
30
Normalized On-Resistance
VGS=-1.8V
25
RDS(ON) (mΩ )
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
20
VGS=-2.5V
15
VGS=-4.5V
10
ID=-8A, VGS=-2.5V
1.4
ID=-9A, VGS=-4.5V
1.2
ID=-6A, VGS=-1.8V
1
17
5
2
10
0.8
0
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
0
45
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+01
ID=-9A
40
1.0E+00
40
35
125°C
25°C
1.0E-01
-IS (A)
RDS(ON) (mΩ )
25°C
10
30
125°C
25
1.0E-02
1.0E-03
20
1.0E-04
15
25°C
10
0
2
4
1.0E-05
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: Nov 2010
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4821
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
2800
VDS=-6V
ID=-9A
4
2400
Capacitance (pF)
3.5
-VGS (Volts)
3
2.5
2
1.5
Ciss
2000
1600
1200
Coss
800
1
400
0.5
0
Crss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
2
4
6
8
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.0
10µs
RDS(ON)
limited
TA=25°C
100µ
1000
Power (W)
10.0
-ID (Amps)
12
1ms
1.0
10ms
DC
0.1
10s
100
10
TJ(Max)=150°C
TA=25°C
0.0
1
0.01
0.1
1
-VDS (Volts)
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=90°C/W
0.1
PD
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: Nov 2010
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Page 4 of 5
AO4821
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 4: Nov 2010
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5