DSA 30 C 60PB tentative V RRM = 60 V I FAV = 2x 15 A V F = 0.68 V Schottky High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA 30 C 60PB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● Low Irm-values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Low losses ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant TO-220AB Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF max. Unit TVJ = 25 °C 60 V VR = 60 V TVJ = 25 °C 0.5 mA VR = 60 V TVJ = 125 °C 5 mA I F = 15 A I F = 30 A TVJ = 25 °C 0.85 0.95 V V I F = 15 A I F = 30 A T VJ = 125 °C 0.68 0.78 V V rectangular, d = 0.5 T C = 150 °C 15 A T VJ = 175 °C 0.44 11.2 V mΩ 1.75 K/W 175 °C TC = 25 °C 85 W 130 A Conditions forward voltage min. I FAV average forward current VF0 rF threshold voltage slope resistance R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t p = 10 ms (50 Hz), sine TVJ = 45 °C CJ junction capacitance VR = tbd V; f = 1 MHz TVJ = EAS non-repetitive avalanche energy I AS = T VJ = 25 °C I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz for power loss calculation only © 2006 IXYS all rights reserved -55 1 A; L = 100 µH 25 °C Data according to IEC 60747and per diode unless otherwise specified tbd pF 0.05 mJ 0.1 A 0629 IXYS reserves the right to change limits, conditions and dimensi typ. DSA 30 C 60PB tentative Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 35 A 0.50 K/W 0.4 0.6 Nm 20 60 N -55 150 °C Weight 2 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB M C D B E F N A H G J K L © 2006 IXYS all rights reserved R Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensi Q Dim.