DSA30C100PN

DSA30C100PN
preliminary
Schottky Diode Gen ²
VRRM
=
100 V
I FAV
= 2x
VF
=
15 A
0.73 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA30C100PN
Backside: isolated
1
2
3
Features / Advantages:
Applications:
Package: TO-220FP
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
DSA30C100PN
preliminary
Ratings
Schottky
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
100
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
100
V
IR
reverse current, drain current
VR = 100 V
TVJ = 25°C
250
µA
VR = 100 V
TVJ = 125°C
2.5
mA
TVJ = 25°C
0.91
V
1.08
V
0.73
V
VF
IF =
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
15 A
IF =
30 A
IF =
15 A
IF =
30 A
TVJ = 125 °C
TC = 120°C
rectangular
0.91
V
T VJ = 175 °C
15
A
TVJ = 175 °C
0.46
V
d = 0.5
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR =
TVJ = 25°C
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
typ.
12.4
mΩ
4.2
K/W
K/W
0.50
TC = 25°C
12 V f = 1 MHz
35
340
146
Data according to IEC 60747and per semiconductor unless otherwise specified
W
A
pF
20131031a
DSA30C100PN
preliminary
Package
Ratings
TO-220FP
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
Weight
2
MD
mounting torque
FC
mounting force with clip
d Spp/App
d Spb/Apb
VISOL
terminal to terminal
1.6
terminal to backside
2.5
creepage distance on surface | striking distance through air
t = 1 second
isolation voltage
t = 1 minute
Product Marking
Part Number
Logo
DateCode
Assembly Code
50/60 Hz, RMS; IISOL ≤ 1 mA
g
0.4
0.6
Nm
20
60
N
1.0
mm
2.5
mm
2500
V
2080
V
Part number
D
S
A
30
C
100
PN
abcdef
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220ABFP (3)
YYWW Z
XXXXXX
Assembly Line
Ordering
Standard
Part Number
DSA30C100PN
Similar Part
DSA30C100PB
DSA30C100HB
DSA30C100QB
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DSA30C100PN
Package
TO-220AB (3)
TO-247AD (3)
TO-3P (3)
* on die level
Delivery Mode
Tube
Code No.
503508
Voltage class
100
100
100
T VJ = 175 °C
Schottky
V 0 max
threshold voltage
0.46
V
R 0 max
slope resistance *
9.2
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
50
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
DSA30C100PN
preliminary
Outlines TO-220FP
E
A
ØP
A1
Q
H
Dim.
D
1 2 3
L1
A2
L
b1
c
b
e
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
2
A
A1
A2
b
c
D
E
e
H
L
L1
ØP
Q
Millimeters
min
max
4.50
4.90
2.34
2.74
2.56
2.96
0.70
0.90
0.45
0.60
15.67 16.07
9.96 10.36
2.54 BSC
6.48
6.88
12.68 13.28
3.03
3.43
3.08
3.28
3.20
3.40
Inches
min
max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.018 0.024
0.617 0.633
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a