DSA120C150QB Schottky Diode Gen ² VRRM = 150 V I FAV = 2x 60 A VF = 0.8 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA120C150QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA120C150QB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 150 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 V IR reverse current, drain current VR = 150 V TVJ = 25°C 900 µA VR = 150 V TVJ = 125°C 5 mA TVJ = 25°C 0.93 V 1.13 V 0.80 V VF IF = forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 125 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 150°C rectangular 1.03 V T VJ = 175 °C 60 A TVJ = 175 °C 0.51 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 3.9 mΩ 0.4 K/W K/W 0.25 TC = 25°C 24 V f = 1 MHz 481 Data according to IEC 60747and per semiconductor unless otherwise specified 375 W 1.20 kA pF 20131031b DSA120C150QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) Weight 5 MD mounting torque FC mounting force with clip Product Marking Logo Part No. Assembly Line Assembly Code g 0.8 1.2 Nm 20 120 N Part number D S A 120 C 150 QB IXYS Zyyww = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) abcd Date Code Ordering Standard Part Number DSA120C150QB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA120C150QB * on die level Delivery Mode Tube Code No. 501788 T VJ = 175 °C Schottky V 0 max threshold voltage 0.51 V R 0 max slope resistance * 1.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA120C150QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA120C150QB Schottky 120 10000 100 100 10 80 150°C IR 1 IF TVJ = 150°C 125°C 25°C 60 [A] 40 TVJ=175°C 125°C CT 100°C [pF] TVJ = 25°C 1000 [mA] 0.1 75°C 0.01 20 50°C 25°C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 100 50 VF [V] Fig. 1 Max. forward voltage drop characteristics 100 0 150 50 100 150 VR [V] VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 60 80 50 DC 60 d = 0.5 40 IF(AV) P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 30 [A] [W] 20 20 10 0 0 0 50 100 150 200 0 10 20 30 TC [°C] 40 50 60 70 IF(AV) [A] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp TC 0.4 0.3 ZthJC 0.2 Rthi ti 0.022 0.0002 0.082 0.0032 0.104 0.026 0.165 0.208 0.027 0.79 [K/W] 0.1 0.0 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b