DSA 30 I 150 PA V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 150 V 30 A 0.80 V Part number DSA 30 I 150 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Housing: TO-220 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings VF forward voltage I FAV average forward current VF0 threshold voltage min. 150 V VR = 150 V 0.9 mA VR = 150 V TVJ = 125 °C 5 mA IF = 30 A TVJ = 25 °C 0.93 V IF = 60 A 1.09 V IF = 30 A IF = 60 A rectangular 0.80 V 0.98 V TC = 150°C 30 A TVJ = 175°C 0.55 V TVJ = 125 °C d = 0.5 6 mΩ 0.85 K/W 175 °C TC = 25 °C 175 W TVJ = 45°C 200 A rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t = 10 ms (50 Hz), sine CJ junction capacitance VR = 12 V; f = 1 MHz TVJ = 25 °C © 2010 IXYS all rights reserved Unit max. TVJ = 25 °C TVJ = 25 °C for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. -55 Data according to IEC 60747and per diode unless otherwise specified 289 pF 20100205b DSA 30 I 150 PA Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 35 0.50 -55 Weight A K/W 150 °C 2 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.4 0.6 Nm 20 60 N I RMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Marking on product Logo DateCode Assembly Code Ordering Standard abcdef YYWW = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) XXXXXX Part Name DSA 30 I 150 PA IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved D S A 30 I 150 PA Marking on Product DSA30I150PA Delivering Mode Tube Base Qty Code Key 50 504155 Data according to IEC 60747and per diode unless otherwise specified 20100205b DSA 30 I 150 PA Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100205b DSA 30 I 150 PA 60 700 10 T VJ=175°C 600 50 1 150°C 40 IF 30 500 IR TVJ = 25°C 125°C 150°C 125°C 0.1 CT 400 100°C [mA] [pF] 300 0.01 75°C [A] TVJ= 25°C 20 200 50°C 0.001 10 100 25°C 0 0.0 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR VF [V] Fig. 1 Maximum forward voltage drop characteristics 40 0 50 100 150 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 30 25 DC 30 d = 0.5 20 IF(AV) P(AV) 20 d= DC 0.5 0.33 0.25 0.17 0.08 15 [A] [W] 10 10 5 0 0 0 40 80 120 160 200 0 TC [°C] 5 10 15 20 25 30 A IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1 ZthJC [K/W] 0.1 0.001 Rthi [K/W] 0.139 0.176 0.305 0.23 0.01 0.1 1 ti [s] 0.00028 0.0033 0.028 0.17 Note: All curves are per diode 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100205b