DHG 20 I 600HA advanced V RRM = I FAV = t rr = Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 20 A 35 ns Part number 3 DHG 20 I 600HA 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) TO-247AD ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance min. max. Unit TVJ = 25 °C 600 V VR = 600 V TVJ = 25 °C 30 µA VR = 600 V TVJ = 125 °C 3 mA I F = 20 A I F = 40 A TVJ = 25 °C 2.31 V 3.08 V I F = 20 A I F = 40 A TVJ = 125 °C 2.15 3.00 V V rectangular, d = 0.5 T C = 85 °C 20 A T VJ = 150 °C 1.31 36.9 V mΩ 0.90 K/W for power loss calculation only R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr reverse recovery time CJ junction capacitance EAS non-repetitive avalanche energy I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz © 2006 IXYS all rights reserved 150 °C = 25 °C -55 140 W t p = 10 ms (50 Hz), sine TVJ = 45 °C 150 A I F = 20 A; TVJ = 25 °C TVJ = 125 °C 8 A A VR = 400 V TVJ = 25 °C TVJ = 125 °C 35 ns ns VR = 300 V; f = 1 MHz TVJ = 25 °C tbd pF I AS = tbd A; L = 100 µH TVJ = 25 °C TC -diF /dt = 400 A/µs * Data according to IEC 60747and per diode unless otherwise specified tbd mJ tbd A 0629 IXYS reserves the right to change limits, conditions and dimensions. typ. DHG 20 I 600HA advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 70 A 0.25 K/W 0.8 1.2 Nm 20 120 N -55 150 °C Weight 6 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD L B E F C A H D G J K © 2006 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.216 0.212 0.244 G H 1.65 - 2.13 4.5 0.065 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 N * Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensions. M Dim.