DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS ■ The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers. FEATURES KEY PARAMETERS VRRM 4500V IF(AV) 3230A IFSM 20000A Qr 1800µC trr 7.0µs ■ The DSF21545SV is designed for fast turn-on thus minimising reverse current through the GTO. ■ Low recovered charge for low losses. ■ DSF21545SV is housed in a similar outline to that of the DG858BW therefore offering complete mechanical compatibility for parallel and series clamping. VOLTAGE RATINGS Type Number DSF21545SV45 Repetitive Peak Reverse Voltage VRRM V 4500 Conditions VRSM = VRRM + 100V Outline type code: V. See Package Details for further information. Lower voltage grades available. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DSF21545SV45 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DSF21545SV CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 3230 A IF(RMS) RMS value Tcase = 65oC 5080 A Continuous (direct) forward current Tcase = 65oC 4680 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 2070 A IF(RMS) RMS value Tcase = 65oC 3255 A Continuous (direct) forward current Tcase = 65oC 2875 A IF SURGE RATINGS Symbol IFSM I2t IFSM I2t IFSM I2t Conditions Parameter Surge (non-repetitive) forward current Max. Units 20 kA 2.0 x 106 A2s 16 kA 1.28 x 106 A2s - kA - A2s 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 100% VRRM, Tj = 150oC I2t for fusing DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR 2/7 www.dynexsemi.com DSF21545SV THERMAL AND MECHANICAL DATA Double side cooled Rth(j-c) Min. Max. dc - 0.0075 o Anode dc - 0.015 o Cathode dc - 0.015 o C/W Double side - 0.002 o C/W Single side - 0.004 o C/W - 150 o o Conditions Parameter Symbol Thermal resistance - junction to case Units C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 35.0kN with mounting compound Tvj Virtual junction temperature Tstg Storage temperature range -55 150 Clamping force 34 48 kN Typ. Max. Units - On-state (conducting) C C CHARACTERISTICS Symbol Conditions Parameter VFM Forward voltage At 3000A peak, Tcase = 25oC - 2.0 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 150 mA 7.0 - µs trr Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 1800 µC IRM Reverse recovery current Tcase = 150oC, VR = 100V - 500 A K Soft factor 2 - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.25 V rT Slope resistance At Tvj = 150oC - 0.25 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 75 V VFRM 3/7 www.dynexsemi.com DSF21545SV CURVES 5000 500 Measured under pulse conditions 400 Instantaneous forward current IF - (A) 4000 Instantaneous forward current IF - (A) Measured under pulse conditions 3000 2000 Tj = 25˚C Tj = 150˚C 1000 300 Tj = 150˚C Tj = 25˚C 200 100 0 0 1.0 2.0 3.0 Instantaneous forward voltage VF - (V) 0 0 4.0 Fig.2 Maximum (limit) forward characteristics 0.5 1.0 1.5 Instantaneous forward voltage VF - (V) Fig.3 Maximum (limit) forward characteristics 200 10000 Conditions: Tj = 150˚C, VR = 100V Current waveform VFR δy di = δy dt δx Reverse recovered charge Qrr - (µC) Voltage waveform 150 Transient forward votage VFP - (V) 2.0 Tj = 125˚C limit δx 100 Tj = 25˚C limit 50 IF = 4000A IF = 2000A IF = 1000A IF = 500A IF = 200A 1000 IF = 100A IF 50µs QS = 0 QS tp = 1ms dIR/dt 0 500 1000 1500 2000 2500 Rate of rise of forward current dIF/dt - (A/µs) 3000 Fig.4 Transient forward voltage vs rate of rise of forward current 100 1 IRR 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.5 Recovered charge 4/7 www.dynexsemi.com DSF21545SV Conditions: Tj = 150 ˚C, VR = 100V IF = 4000A IF = 2000A IF = 1000A IF = 500A 1000 IF = 200A IF = 100A 100 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.6 Typical reverse recovery current vs rate of rise of forward current 0.01 d.c.Double side cooled Thermal impedance - junction to case, Zth(j-c) - ˚C/W Reverse recovery current Irr - (A) 10000 0.001 0.0001 0.001 0.01 0.1 1.0 Time - (s) 10 100 Fig.7 Maximum (limit) transient thermal impedance junction to case - (˚C/W) 5/7 www.dynexsemi.com DSF21545SV PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Holes Ø3.6 x 2.0 deep (In both electrodes) Cathode 27.0 25.4 Ø112.5 max Ø73 nom Ø73 nom Anode Nominal weight: 1100g Clamping force: 43kN ±10% Package outline type code: V 6/7 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com