DSF20545SF - Dynex Semiconductor Ltd.

DSF20545SF
DSF20545SF
Fast Recovery Diode
Advance Information
DS4152- JXO\ 20 (LN31790)
KEY PARAMETERS
VRRM
4500V
IF(AV)
1256A
IFSM
16000A
Qr
1250µC
trr
7.0µs
APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Inverters And Choppers
■ Welding
■ High Frequency Rectification
■ UPS
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF20545SF45
4500
DSF20545SF44
4400
DSF20545SF43
4300
DSF20545SF42
4200
DSF20545SF41
4100
DSF20545SF40
4000
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: CB450.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
1256
A
IF(RMS)
RMS value
Tcase = 65oC
1971
A
Continuous (direct) forward current
Tcase = 65oC
1765
A
995
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
IF(RMS)
RMS value
Tcase = 65oC
1552
A
Continuous (direct) forward current
Tcase = 65oC
1335
A
IF
1/8
DSF20545SF
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Max.
Units
16
kA
1280 x 103
A2s
12.8
kA
819.2 X 103
A2s
-
kA
-
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 100% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.022
o
Anode dc
-
0.032
o
Cathode dc
-
0.032
o
Double side
-
0.004
o
Single side
-
0.008
o
-
150
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 15kN
with mounting compound
C/W
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
150
o
Clamping force
17.5
21.5
kN
Typ.
Max.
Units
-
On-state (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 1800A peak, Tcase = 25oC
-
2.1
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
50
mA
-
7.0
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
1250
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
400
A
K
Soft factor
1.8
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.36
V
rT
Slope resistance
At Tvj = 150oC
-
0.47
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
160
V
VFRM
2/8
Parameter
DSF20545SF
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
CURVES
4000
Measured under pulse conditions
3500
Instantaneous forward current IF - (A)
3000
Tj = 150˚C
2500
2000
Tj = 25˚C
1500
1000
500
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
3/8
DSF20545SF
500
Instantaneous forward current IF - (A)
Measured under pulse conditions
400
Tj = 150˚C
300
200
Tj = 25˚C
100
0.5
0.75
1.0
1.25
1.5
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
250
Current
waveform
VFR
Voltage
waveform
Transient forward votage VFP - (V)
200
δy
di = δy
dt δx
δx
150
Tj = 125˚C limit
100
Tj = 25˚C limit
50
0
0
500
1000
1500
2000
Rate of rise of forward current dIF/dt - (A/µs)
Fig.3 Transient forward voltage vs rate of rise of forward current
4/8
DSF20545SF
100000
IF
QS = ∫
50µs
Conditions:
0
Tj = 150˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
10000
IRR
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
1000
100
IF = 100A
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.4 Recovered charge
10000
Conditions:
Tj = 150˚C,
Reverse recovery current IRR - (A)
VR = 100V
IF = 2000A
1000
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
100
10
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.5 Typical reverse recovery current vs rate of rise of reverse current
5/8
DSF20545SF
Thermal Impedance - Junction to case (˚C/W)
0.1
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1.0
Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
6/8
10
DSF20545SF
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
27.0
25.4
Ø76 max
Ø48 nom
Ø48 nom
Anode
Nominal weight: 500g
Clamping force: 19.6kN ± 10%
Package outline type code: CB450
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
7/8
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This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
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HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: [email protected]
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.