DSF8035SK DSF8035SK Fast Recovery Diode Replaces March 1998 version, DS4412-1.3 DS4412-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF(AV) 335A IFSM 3500A Qr 400µC trr 4.0µs ■ Snubber Diode For GTO Applications FEATURES ■ Double side cooling ■ High surge capability ■ Low recovery charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DSF8035SK35 3500 Conditions VRSM = VRRM + 100V Lower voltage grades available. Outline type code: K. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 335 A IF(RMS) RMS value Tcase = 65oC 529 A Continuous (direct) forward current Tcase = 65oC 490 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 226 A IF(RMS) RMS value Tcase = 65oC 355 A Continuous (direct) forward current Tcase = 65oC 317 A IF 1/8 DSF8035SK SURGE RATINGS Symbol IFSM I2t IFSM I2t Conditions Parameter Max. Units 3.0 kA 45 x 103 A2s 2.4 kA 28.8 x 103 A2s Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Conditions Parameter Symbol Double side cooled Rth(j-c) Thermal resistance - junction to case Min. Max. Units dc - 0.048 o Anode dc - 0.090 o Cathode dc - 0.103 o Double side - 0.01 o Single side - 0.02 o - 150 o o C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 8.0kN with mounting compound C/W C/W C/W Tvj Virtual junction temperature Tstg Storage temperature range -55 175 Clamping force 7.0 9.0 kN Typ. Max. Units - Forward (conducting) C C CHARACTERISTICS Symbol Conditions VFM Forward voltage At 400A peak, Tcase = 25oC - 3.5 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 50 mA - 4.0 µs trr Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 400 µC IRM Reverse recovery current Tcase = 150oC, VR = 100V - 220 A K Soft factor 1.4 - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.8 V rT Slope resistance At Tvj = 150oC - 3.7 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 140 V VFRM 2/8 Parameter DSF8035SK DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR CURVES 1600 Measured under pulse conditions Instantaneous forward current IF - (A) 1400 1200 Tj = 150˚C 1000 800 600 Min. Limit Max. Limit 400 200 0 0 2.0 4.0 6.0 Instantaneous forward voltage VF - (V) 8.0 Fig.1 Maximum (limit) forward characteristics 3/8 DSF8035SK 500 Measured under pulse conditions Instantaneous forward current IF - (A) 400 Tj = 150˚C 300 200 Min. Limit Max. Limit 100 0 0.5 1.5 2.5 3.5 4.5 Instantaneous forward voltage VF - (V) Fig.2 Maximum (limit) forward characteristics 500 Current waveform VFR Voltage waveform 400 Transient forward votage VFP - (V) A: Tj = 150˚C B: Tj = 125˚C C: Tj = 25˚C δy di = δy dt δx δx 300 A B 200 C 100 0 0 500 1000 1500 2000 2500 Rate of rise of forward current dIF/dt - (A/µs) 4/8 Fig.3 Transient forward voltage vs rate of rise of forward current DSF8035SK 100000 QS = ∫ IF Conditions: 50µs 0 Tj = 150˚C, VR = 100V Reverse recovered charge QS - (µC) QS tp = 1ms dIR/dt 10000 IRR IF = 2000 IF = 1000 1000 IF = 200 IF = 500 IF = 100 100 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig. 4 Recovered charge 1000 Conditions: Tj = 150˚C, IF = 2000A VR = 100V IF = 1000A Reverse recovery current IRR - (A) IF = 500A IF = 200A IF = 100A 100 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig. 5 Typical reverse recovery current vs rate of rise of reverse current 5/8 DSF8035SK 0.1 Thermal impedance - (˚C/W) Single side cooled Double side cooled 0.01 0.001 0.001 0.01 0.1 Time - (s) 1 Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 6/8 10 DSF8035SK PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 Holes Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø42 max 27.0 25.4 Ø25 nom Ø25 nom Anode Nominal weight: 160g Clamping force: 8kN ±10% Package outine type code: K ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement with a multi-meter AN4853 Use of V , r on-state characteristic AN5001 TO T 7/8 DSF8035SK POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4412-2 Issue No. 2.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8