DSF8025SE / DSF8025SG DSF8025SE / DSF8025SG Fast Recovery Diode Advance Information Replaces March 2000 version, DS4146-5.1 FDS4146-6.0 January 2004 KEY PARAMETERS VRRM 2500V IF(AV) 650A IFSM 7500A Qr 540µC trr 5.0µs APPLICATIONS ■ Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding ■ High Frequency Rectification ■ UPS FEATURES ■ Double side cooling ■ High surge capability ■ Low recovery charge VOLTAGE RATINGS Type Number DSF8025SE25 DSF8025SG25 DSF8025SE24 DSF8025SG24 DSF8025SE23 DSF8025SG23 DSF8025SE22 DSF8025SG22 DSF8025SE21 DSF8025SG21 DSF8025SE20 DSF8025SG20 Repetitive Peak Reverse Voltage VRRM V 2500 Conditions VRSM = VRRM + 100V Package outline type code: E Package outline type code: G 2400 (See package details for further information) 2300 Fig. 1 Package outlines 2200 2100 2000 Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DSF8025SE23 for 2300V product in an 'E' outline, DSF8025SG23 for 2300V product in an 'G' outline, Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DSF8025SE / DSF8025SG CURRENT RATINGS Symbol Parameter Conditions Max. Units 650 A Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC IF(RMS) RMS value Tcase = 65oC 1020 A Continuous (direct) forward current Tcase = 65oC 785 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 385 A IF(RMS) RMS value Tcase = 65oC 604 A Continuous (direct) forward current Tcase = 65oC 465 A IF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Conditions Surge (non-repetitive) forward current Max. Units 7.5 kA 281 x 103 A2s 6.0 kA 180 x 103 A2s 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Min. Max. Units dc - 0.047 o Anode dc - 0.094 o Cathode dc - 0.094 o Double side - 0.018 o Single side - 0.036 o - 150 o o C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 8.0kN with mounting compound Tvj Virtual junction temperature Tstg Storage temperature range -55 175 Clamping force 7.0 9.0 - Forward (conducting) C/W C/W C/W C C kN 2/8 www.dynexsemi.com DSF8025SE / DSF8025SG CHARACTERISTICS Symbol Conditions Parameter Typ. Max. Units VFM Forward voltage At 1000A peak, Tcase = 25oC - 2.3 V IRM Peak reverse current At VRRM, Tcase = 150oC - 50 mA trr Reverse recovery time - 5.0 µs Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 540 µC IRR Reverse recovery current Tcase = 150oC, VR = 100V - 235 A K Soft factor 1.8 - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.48 V rT Slope resistance At Tvj = 150oC - 0.8 mΩ Peak forward recovery voltage di/dt = 1000A/µs, Tj = 125oC 70 - V VFRP DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR 3/8 www.dynexsemi.com DSF8025SE / DSF8025SG CURVES 3500 500 Measured under pulse conditions Measured under pulse conditions Tj = 25˚C Tj = 150˚C Tj = 25˚C Tj = 150˚C 3000 Instantaneous forward current IF - (A) Instantaneous forward current IF - (A) 400 2500 300 2000 200 1500 100 1000 500 0 1.0 2.0 3.0 Instantaneous forward voltage VF - (V) 0 1.00 4.0 Fig.2 Maximum (limit) forward characteristics 1.25 1.50 1.75 Instantaneous forward voltage VF - (V) Fig.3 Maximum (limit) forward characteristics 250 10000 IFM Current waveform QRA1 VFRP tp = 1ms dIR/dt Reverse recovered charge, Qr - (µC) Transient forward votage, VFR - (V) δy di = δy dt δx δx 0.5x IRR IRR 1000 Tj = 125˚C limit 100 Tj = 25˚C limit IF = 2000A IF = 1000A 50 0 0 Conditions: Tj = 150˚C, VR = 100V Voltage waveform 200 150 2.00 IF = 200A 500 1000 1500 Rate of rise of forward current, dIF/dt - (A/µs) Fig.5 Transient forward voltage vs rate of rise of forward current 2000 100 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.6 Recovered charge 4/8 www.dynexsemi.com DSF8025SE / DSF8025SG 1000 0.1 Conditions: Tj = 150˚C, VR = 100V Anode side cooled Transient thermal impedance, Zth(j-c) - (˚C/W) A B Reverse recovery current, IRR - (A) C Double side cooled 0.01 100 A: IF = 2000A B: IF = 1000A C: IF = 200A 10 1 10 Rate of rise of reverse current dIR/dt - (A/µs) 100 Fig.7 Typical reverse recovery current vs rate of fall of forward current 0.001 0.001 0.01 0.1 Time - (s) 1.0 10 Fig.8 Maximum (limit) transient thermal impedance junction to case - (˚C/W) 5/8 www.dynexsemi.com DSF8025SE / DSF8025SG PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode Ø42max Ø25nom. 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 8kN ±10% Package maybe supplied with pins and/or tags. Package outline type code: E Fig. 9 Package details - E 6/8 www.dynexsemi.com DSF8025SE / DSF8025SG PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (in both electrodes) Cathode Ø58.5 max 27.0 25.4 Ø34 nom Ø34 nom Anode Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G Fig. 10 Package details - G 7/8 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com