Type BSS131 SIPMOS® Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode V DS 240 V R DS(on),max 14 Ω ID 0.1 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Qualified according to AEC Q101 Type Package Pb-free Tape and Reel Information Marking BSS131 PG-SOT23 Yes L6327 SRs Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.11 T A=70 °C 0.09 0.4 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.1 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS 6 ±20 ESD sensitivity (HBM) as per MIL-STD 883 Unit A kV/µs V Class 1a Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.4 Value 0.36 W -55 ... 150 °C 55/150/56 page 1 2011-06-07 BSS131 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 240 - - 0.8 1.4 1.8 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=0 V, I D=56 µA Drain-source leakage current I D (off) V DS=240 V, V GS=0 V, T j=25 °C - - 0.01 V DS=240 V, V GS=0 V, T j=150 °C - - 5 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.09 A - 9.07 20 Ω V GS=10 V, I D=0.1 A - 7.7 14 |V DS|>2|I D|R DS(on)max, I D=0.08 A 0.06 0.13 - Transconductance Rev. 2.4 g fs page 2 S 2011-06-07 BSS131 Parameter Values Symbol Conditions Unit min. typ. max. - 58 77 - 7.3 10 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.8 4.2 Turn-on delay time t d(on) - 3.3 5.0 Rise time tr - 3.1 4.6 Turn-off delay time t d(off) - 13.7 20 Fall time tf - 64.5 97 Gate to source charge Q gs - 0.16 0.22 Gate to drain charge Q gd - 0.8 1.2 Gate charge total Qg - 2.1 3.1 Gate plateau voltage V plateau - 2.90 - V - - 0.11 A - - 0.43 - 0.81 1.2 V - 42.9 64.3 ns - 22.6 34 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=120 V, V GS=10 V, I D=0.1 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=192 V, I D=0.1 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 2.4 T A=25 °C V GS=0 V, I F=0.1 A, T j=25 °C V R=120 V, I F=0.1 A, di F/dt =100 A/µs page 3 2011-06-07 BSS131 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.4 0.12 0.1 0.3 I D [A] P tot [W] 0.08 0.2 0.06 0.04 0.1 0.02 0 0 0 40 80 120 160 0 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 103 limited by on-state resistance 30 µs 100 µs 0.5 1 ms 10-1 102 Z thJA [K/W] 0.2 I D [A] 10 ms 0.1 0.05 100 ms 101 10-2 0.02 DC 0.01 single pulse 100 10-3 1 10 100 1000 10-4 10-3 10-2 10-1 100 101 t p [s] V DS [V] Rev. 2.4 10-5 page 4 2011-06-07 BSS131 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.4 25 V7 2.3 V 4.5 V V 10 2.7 V 3.3 V 3.9 V 23 V5 V 3.9 21 0.3 R DS(on) [Ω] I D [A] 19 V 3.3 0.2 17 15 13 4.5 V 11 5V V 2.7 0.1 7V 9 10 V V 2.3 7 0 5 0 1 2 3 4 5 6 7 0 0.1 V DS [V] 0.2 0.3 0.4 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.3 0.4 0.25 0.2 g fs [S] I D [A] 0.3 0.2 0.15 0.1 0.1 0.05 0 0 0 1 2 3 4 0.0 V GS [V] Rev. 2.4 0.1 0.2 0.3 0.4 I D [A] page 5 2011-06-07 BSS131 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=56 µA parameter: I D 50 2.4 2 40 %98 V GS(th) [V] R DS(on) [Ω] 1.6 30 20 %98 typ 1.2 0.8 %2 10 typ 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 100 103 150 °C 25 °C 150 °C, 98% 25 °C, 98% 10-1 102 I F [A] C [pF] Ciss 101 10-2 Coss Crss 100 10-3 0 10 20 30 0 Rev. 2.4 0.4 0.8 1.2 1.6 2 2.4 2.8 V SD [V] V DS [V] page 6 2011-06-07 BSS131 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.1 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 300 12 290 120V 10 280 270 48 V V BR(DSS) [V] V GS [V] 8 192 V 6 4 260 250 240 230 220 2 210 200 0 0 0.5 1 1.5 2 2.5 Q gate [nC] Rev. 2.4 -60 -20 20 60 100 140 T j [°C] page 7 2011-06-07 BSS131 Package Outline: Footprint: Rev. 2.4 Packaging: page 8 2011-06-07 BSS131 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 9 2011-06-07