BSS138N SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode VDS 60 V RDS(on),max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21 Type Package Tape and Reel Marking BSS138N PG-SOT-23 H6327: 3000 SKs BSS138N PG-SOT-23 H6433: 10000 SKs Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.23 T A=70 °C 0.18 0.92 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS ESD sensitivity P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.86 6 ±20 JESD22-A114 (HBM) Power dissipation Value Unit A kV/µs V Class 0 (<250V) 0.36 W -55 ... 150 °C 55/150/56 page 1 2012-04-17 BSS138N Parameter Values Symbol Conditions Unit min. typ. max. - - 350 60 - - Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 µA Gate threshold voltage V GS(th) V GS=V DS, I D=26 µA 0.6 1.0 1.4 Drain-source leakage current I D (off) V DS=60 V, V GS=0 V, T j=25 °C - - 0.1 V DS=60 V, V GS=0 V, T j=150 °C - - 5 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.03 A - 3.3 4.0 Ω V GS=4.5 V, I D=0.19 A - 3.5 6.0 V GS=10 V, I D=0.23 A - 2.2 3.5 |V DS|>2|I D|R DS(on)max, I D=0.18 A 0.1 0.2 - Transconductance Rev. 2.86 g fs page 2 S 2012-04-17 BSS138N Parameter Values Symbol Conditions Unit min. typ. max. - 32 41 - 7.2 9.5 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.8 3.8 Turn-on delay time t d(on) - 2.3 3.5 Rise time tr - 3.0 4.5 Turn-off delay time t d(off) - 6.7 10 Fall time tf - 8.2 12.3 Gate to source charge Q gs - 0.10 0.14 Gate to drain charge Q gd - 0.3 0.4 Gate charge total Qg - 1.0 1.4 Gate plateau voltage V plateau - 3.3 - V - - 0.23 A - - 0.92 - 0.83 1.2 V - 9.1 14.5 ns - 3.3 5 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 Ω ns Gate Charge Characteristics V DD=48 V, I D=0.23 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 2.86 T A=25 °C V GS=0 V, I F=0.23 A, T j=25 °C V R=30 V, I F=0.23 A, di F/dt =100 A/µs page 3 2012-04-17 BSS138N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.25 0.4 0.2 0.3 ID [A] Ptot [W] 0.15 0.2 0.1 0.1 0.05 0 0 0 40 80 120 0 160 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 10 µs 0.5 100 102 100 µs ZthJA [K/W] ID [A] 0.2 1 ms 10-1 10 ms 0.1 0.05 101 100 ms 0.02 0.01 10-2 DC single pulse 10-3 100 1 10 100 VDS [V] Rev. 2.86 10-5 10-4 10-3 10-2 10-1 100 101 tp [s] page 4 2012-04-17 BSS138N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 0.6 10 V 7V 5V 2.9 V 4.5 V 3.2 V 4V 3.5 V 0.5 8 4V RDS(on) [Ω] ID [A] 0.4 3.5 V 0.3 3.2 V 6 4.5 V 4 5V 0.2 2.9 V 7V 10 V 2 0.1 0 0 0 1 2 3 4 0 5 0.1 VDS [V] 0.2 0.3 0.4 0.5 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.6 0.4 0.35 0.5 0.3 0.4 gfs [S] ID [A] 0.25 0.3 0.2 0.15 0.2 0.1 0.1 0.05 0 0 1 2 3 4 5 VGS [V] Rev. 2.86 0 0.00 0.10 0.20 0.30 0.40 ID [A] page 5 2012-04-17 BSS138N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.23 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=26 µA parameter: I D 8 2 1.6 6 1.2 VGS(th) [V] RDS(on) [Ω] 98 % 98 % 4 typ 0.8 typ 2% 2 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 100 150 °C, 98% 25 °C 25 °C, 98% 150 °C Ciss IF [A] C [pF] 10-1 101 Coss 10-2 Crss 100 10-3 0 10 20 30 0.4 0.8 1.2 1.6 2 2.4 VSD [V] VDS [V] Rev. 2.86 0 page 6 2012-04-17 BSS138N 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.23 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 70 12 30 V 10 65 VBR(DSS) [V] VGS [V] 8 48 V 12 V 6 60 4 55 2 50 0 0 0.2 0.4 0.6 0.8 1 Qgate [nC] Rev. 2.86 -60 -20 20 60 100 140 180 Tj [°C] page 7 2012-04-17 BSS138N Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.86 page 8 2012-04-17 BSS138N Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.86 page 9 2012-04-17