PD - 97625
AUTOMOTIVE GRADE
AUIRF3415
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET® Power MOSFET
D
V(BR)DSS
150V
RDS(on) max.
G
S
0.042Ω
ID
43A
D
Description
G
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
D
S
TO-220AB
AUIRF3415
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
43
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
c
30
150
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
200
1.3
± 20
W
W/°C
V
mJ
IDM
d
A
EAS
Single Pulse Avalanche Energy (Thermally Limited)
590
IAR
Avalanche Current
22
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
5.0
-55 to + 175
mJ
V/ns
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
c
c
e
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Typ.
Max.
–––
0.75
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
RθJC
Junction-to-Case
RθCS
RθJA
g
Parameter
y
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/19/2011
AUIRF3415
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
150
–––
–––
2.0
19
–––
–––
–––
–––
–––
0.17
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.042
4.0
–––
25
250
100
-100
V
V/°C
Ω
V
S
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 22A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 22A
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
55
71
69
4.5
200
17
98
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2400
640
340
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
nC
ns
nH
pF
ID = 22A
VDS = 120V
VGS = 10V, See Fig. 6 & 13
VDD = 75V
ID = 22A
RG = 2.5 Ω
RD = 3.3 Ω, See Fig. 10
Between lead,
f
D
G
S
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
43
ISM
(Body Diode)
Pulsed Source Current
–––
–––
150
VSD
trr
Qrr
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
260
2.2
1.3
390
3.3
(Body Diode)c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25Ω, IAS = 22A. (See Figure 12)
2
Conditions
MOSFET symbol
A
V
ns
nC
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 22A, VGS = 0V
TJ = 25°C, IF = 22A
di/dt = 100A/µs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
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AUIRF3415
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M4 (+/- 800V)
AEC-Q101-002
†††
Human Body Model
Class H2 (+/- 3500V)
AEC-Q101-001
†††
Charged Device
Model
Class C5 (+/- 2000V)
AEC-Q101-005
†††
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF3415
1000
1000
VGS
15V
10V
8.0V
7.0V
5.0V
6.0V
5.5V
5.5V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
5.0V
6.0V
5.5V
5.5V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
4.5V
10
4.5V
20us PULSE WIDTH
TJ = 25 oC
1
10
10
100
20us PULSE WIDTH
TJ = 175 oC
1
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 25 ° C
10
TJ = 175 ° C
V DS = 50V
20µs PULSE WIDTH
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
100
Fig 2. Typical Output Characteristics
1000
100
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
ID = 37A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( oC)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF3415
6000
VGS , Gate-to-Source Voltage (V)
5000
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
3000
Coss
2000
Crss
1000
0
1
10
16
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
VDS , Drain-to-Source Voltage (V)
40
80
120
160
200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
VDS = 120V
VDS = 75V
VDS = 30V
12
0
100
ID = 22A
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
100
TJ = 175 o C
10
TJ = 25 o C
1
V GS = 0 V
0.1
0.2
0.6
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.8
10us
100us
10
1
1ms
10ms
TC = 25 o C
TJ = 175 o C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3415
RD
V DS
50
VGS
40
ID , Drain Current (A)
D.U.T.
RG
+
-VDD
10V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
0
90%
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3415
15V
L
VDS
D.U.T
RG
IAS
20V
TOP
1200
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
BOTTOM
ID
9.0A
16A
22A
1000
DRIVER
0.01Ω
tp
EAS , Single Pulse Avalanche Energy (mJ)
1400
A
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (oC)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRF3415
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
+
-
-
+
+
RG
•
•
•
•
Driver Gate Drive
P.W.
-
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
VDD
P.W.
Period
*
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRF3415
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3415
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF3415
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF3415
TO-220
Form
Tube
10
Complete Part Number
Quantity
50
AUIRF3415
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AUIRF3415
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim
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automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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11