PD - 97653A
AUTOMOTIVE GRADE
AUIRF7304Q
Features
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HEXFET® Power MOSFET
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Dynamic dV/dT Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified*
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Top View
V(BR)DSS
-20V
RDS(on) max.
ID
0.090Ω
-4.3A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8
AUIRF7304Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ -4.5V
-4.7
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-3.4
IDM
e
c
PD @TA = 25°C
Power Dissipation
VGS
Linear Derating Factor
Gate-to-Source Voltage
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
g
Units
A
-17
2.0
W
0.016
± 12
W/°C
V
-5.0
-55 to + 150
V/ns
°C
Thermal Resistance
Parameter
RθJA
Junction-to-Ambient fg
Typ.
Max.
Units
–––
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
06/23/11
AUIRF7304Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
-20
––– –––
V VGS = 0V, ID = -250μA
––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -2.2A
––– ––– 0.090
Static Drain-to-Source On-Resistance
Ω
VGS = -2.7V, ID = -1.8A
––– ––– 0.140
Gate Threshold Voltage
-0.70 ––– -1.5
V VDS = VGS, ID = -250μA
Forward Transconductance
4.0
––– –––
S VDS = -16V, ID = -2.2A
VDS = -16V, VGS = 0V
Drain-to-Source Leakage Current
––– ––– -1.0
μA
VDS = -16V, VGS = 0V, TJ = 125°C
––– –––
-25
VGS = -12V
Gate-to-Source Forward Leakage
––– ––– -100
nA
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 12V
RDS(on)
VGS(th)
gfs
IDSS
IGSS
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.4
26
51
33
22
3.3
9.0
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.0
–––
nC
ns
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
610
310
170
–––
–––
–––
e
e
Between lead,
nH
LS
ID = -2.2A
VDS = -16V
VGS = -4.5V, See Fig. 6 & 12
VDD = -10V
ID = -2.2A
RG = 6.0Ω
RD = 4.5Ω, See Fig. 10
D
6mm (0.25in.)
from package
G
and center of die contact
pF
S
VGS = 0V
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
Qrr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
ISM
c
Min. Typ. Max. Units
–––
–––
-2.5
A
–––
–––
-17
–––
–––
–––
–––
56
71
-1.0
84
110
Conditions
MOSFET symbol
V
ns
nC
D
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C,IF = -2.2A
di/dt = 100A/μs
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS,
T J ≤ 150°C.
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Pulse width ≤ 300μs; duty cycle ≤ 2%.
Starting TJ = 25°C, RG = 25Ω, IAS = -2.2A.
When mounted on 1 inch square copper board, t<10 sec.
2
e
AUIRF7304Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Class M1B (+/- 100V)
AEC-Q101-002
†††
Human Body Model
Class H0 (+/- 250V)
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF7304Q
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1.5V
20μs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-ID , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
0.1
1
10
10
1
-1.5V
20μs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 150°C
1
VDS = -15V
20μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
100
Fig 2. Typical Output Characteristics
100
TJ = 25°C
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
1
5.0
A
I D = -3.6A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
4
AUIRF7304Q
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1500
Ciss
1000
Coss
Crss
500
0
1
10
100
A
I D = -2.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
-VDS , Drain-to-Source Voltage (V)
10
15
20
A
25
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
5
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.6
0.9
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
1.5
10
1ms
1
TA = 25 °C
TJ = 150 °C
Single Pulse
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF7304Q
V DS
VGS
5.0
D.U.T.
RG
-ID , Drain Current (A)
4.0
RD
-
+
V DD
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
10%
VGS
150
td(on)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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6
AUIRF7304Q
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-4.5 V
QGS
.2μF
12V
.3μF
D.U.T.
QGD
+VDS
VGS
VG
-3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
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ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
7
AUIRF7304Q
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
V DD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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8
AUIRF7304Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
F7304Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF7304Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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10
AUIRF7304Q
Ordering Information
Base part
number
AUIRF7304Q
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Package Type
Standard Pack
SO-8
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
2500
AUIRF7304Q
AUIRF7304QTR
11
AUIRF7304Q
IMPORTANT NOTICE
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
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products and applications using IR components. To minimize the risks with customer products and applications,
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For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
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