PD - 96434
AUTOMOTIVE GRADE
AUIRFZ46NS
AUIRFZ46NL
Features
l
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HEXFET® Power MOSFET
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V(BR)DSS
55V
RDS(on) max.
G
16.5mΩ
i
ID(Silicon Limited)
S
53A
ID (Package Limited)
39A
Description
Specifically designed for Automotive applications, this
stripe planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
D2Pak
AUIRFZ46NS
Absolute Maximum Ratings
TO-262
AUIRFZ46NL
G
D
S
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
53
37
39
180
3.8
107
0.71
±20
152
28
11
5.0
cg
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
c
dh
c
eg
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
i
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
A
W
W/°C
V
mJ
A
mJ
V/ns
-55 to + 175
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)
j
Typ.
Max.
Units
–––
–––
1.4
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
04/16/12
AUIRFZ46NS/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
55
–––
–––
V
Conditions
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.057
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
16.5
–––
4.0
mΩ
V
VGS = 10V, ID
2.0
gfs
IDSS
Forward Transconductance
19
–––
–––
S
VDS = 25V, ID = 28A
Drain-to-Source Leakage Current
–––
–––
25
μA
VDS = 55V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = 0V, ID = 250μA
g
= 28A f
VDS = VGS, ID = 250μA
fg
VDS = 44V, VGS = 0V, TJ = 150°C
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
–––
72
Qgs
Gate-to-Source Charge
–––
–––
11
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
26
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 28V
tr
Rise Time
–––
76
–––
ID = 28A
td(off)
Turn-Off Delay Time
–––
52
–––
tf
Fall Time
–––
57
–––
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
–––
407
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
Min.
Typ.
Max.
–––
4.5
–––
–––
7.5
–––
–––
1696
–––
ID = 28A
nC
VDS = 44V
VGS = 10V, See Fig.6 and 13
ns
RG = 12Ω
RD = 0.98Ω, See Fig. 10
fg
fg
Between lead,
nH
6mm (0.25in.)
Between lead,
and center of die contact
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz, See Fig.5
g
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
i
Units
–––
–––
53
(Body Diode)
Diode Forward Voltage
–––
–––
180
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
67
101
ns
Qrr
Reverse Recovery Charge
–––
208
312
nC
ton
Forward Turn-On Time
c
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 28A, VGS = 0V
S
f
TJ = 25°C, IF = 28A
di/dt = 100A/μs
fg
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 389µH, RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 220A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions.
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A.
When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to
application note #AN-994.
2
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AUIRFZ46NS/L
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
†
††
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
3L-D2 PAK
MSL1
3L-TO-262
N/A
Class M3(+/- 400V )
(per AEC-Q101-002)
Class H1B(+/- 1000V )
(per AEC-Q101-001)
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFZ46NS/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
10
4.5V
20μs PULSE WIDTH
TCJ == 25°C
25°C
1
0.1
1
10
100
A
100
TJ = 175°C
10
V DS = 25V
20μs PULSE WIDTH
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
6
10
100
A
Fig 2. Typical Output Characteristics
2.5
5
1
VDS , Drain-to-Source Voltage (V)
1000
1
20μs PULSE WIDTH
TTCJ = 175°C
175°C
1
0.1
Fig 1. Typical Output Characteristics
100
4.5V
10
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
10
A
I D = 46A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRFZ46NS/L
2800
V GS , Gate-to-Source Voltage (V)
2400
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS = 44V
V DS = 28V
16
Ciss
2000
I D = 28A
12
1600
Coss
1200
800
Crss
400
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
A
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
2.4
10μs
100
100μs
10
1ms
10ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFZ46NS/L
60
Limited By Package
ID, Drain Current (A)
50
RD
V DS
V GS
40
D.U.T.
RG
+
V-DD
30
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
10
Fig 10a. Switching Time Test Circuit
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
AUIRFZ46NS/L
500
TOP
BOTTOM
400
ID
11A
20A
28A
300
200
100
0
VDD = 25V
25
50
V(BR)DSS
75
100
125
150
A
175
Starting TJ , Junction Temperature (°C)
tp
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
12V
.2μF
.3μF
D.U.T.
QG
10 V
+
V
- DS
VGS
3mA
QGS
QGD
IG
ID
Current Sampling Resistors
VG
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
AUIRFZ46NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
D=
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
V DD
P.W.
Period
*
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRFZ46NS/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUFZ46NS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFZ46NS/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUFZ46NL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFZ46NS/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
11
AUIRFZ46NS/L
Ordering Information
Base part
Package Type
AUIRFZ46NL
AUIRFZ46NS
TO-262
D2Pak
12
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFZ46NL
AUIRFZ46NS
AUIRFZ46NSTRL
AUIRFZ46NSTRR
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AUIRFZ46NS/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information
with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13