PD - 97627A
AUTOMOTIVE GRADE
AUIRF9Z34N
HEXFET® Power MOSFET
Features
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Advanced Planar Technology
P-Channel MOSFET
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
D
G
S
V(BR)DSS
-55V
RDS(on) max.
0.10Ω
ID
-19A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF9Z34N
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
-19
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-14
Pulsed Drain Current
-68
IDM
c
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
d
Units
A
68
0.45
± 20
W
W/°C
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
180
mJ
IAR
Avalanche Current
-10
A
6.8
-5.0
-55 to + 175
mJ
V/ns
EAR
dv/dt
TJ
TSTG
c
Repetitive Avalanche Energy c
Peak Diode Recovery dv/dt e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Typ.
Max.
–––
2.2
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
RθJC
Junction-to-Case
RθCS
RθJA
g
Parameter
y
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/21/11
AUIRF9Z34N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-55
–––
–––
-2.0
4.2
–––
–––
–––
–––
–––
0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.10
-4.0
–––
-25
-250
100
-100
V
V/°C
Ω
V
S
μA
nA
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -10A
VDS = VGS, ID = -250μA
VDS = -25V, ID = -10A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
55
30
41
4.5
35
79
16
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
620
280
140
–––
–––
–––
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
nC
ns
nH
pF
ID = -10A
VDS = -44V
VGS = -10V, See Fig. 6 & 13
VDD = -28V
ID = -10A
RG = 13Ω
RD = 2.6Ω, See Fig. 10
Between lead,
f
f
D
G
S
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
-19
ISM
(Body Diode)
Pulsed Source Current
–––
–––
-68
showing the
integral reverse
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-1.6
82
160
S
p-n junction diode.
TJ = 25°C, IS = -10A, VGS = 0V
TJ = 25°C, IF = -10A
di/dt = 100A/μs
c
MOSFET symbol
A
–––
–––
–––
–––
54
110
V
ns
nC
G
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.6mH, RG = 25Ω, IAS = -10A. (See Figure 12)
ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
D
AUIRF9Z34N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M3 (+/- 250V)†††
AEC-Q101-002
Human Body Model
Class H1B (+/- 800V)†††
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
AUIRF9Z34N
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
10
-4.5V
20μs PULSE WIDTH
Tc = 25°C
A
1
0.1
1
10
10
-4.5V
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
VDS = -25V
20μs PULSE WIDTH
6
7
8
9
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
100
5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20μs PULSE WIDTH
TC = 175°C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
4
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
TOP
10
A
I D = -17A
1.5
1.0
0.5
VGS = -10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
AUIRF9Z34N
1200
800
Ciss
600
Coss
-VGS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
400
Crss
200
0
1
10
100
A
I D = -10A
VDS = -44V
VDS = -28V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
-VDS , Drain-to-Source Voltage (V)
20
30
40
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
10
TJ = 175°C
TJ = 25°C
1
100
10μs
100μs
10
1ms
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.6
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
A
100
AUIRF9Z34N
RD
V DS
20
VGS
D.U.T.
RG
-
+
ID , Drain Current (A)
15
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
0
td(on)
25
50
75
100
125
150
tr
t d(off)
tf
VGS
175
10%
TC , Case Temperature ( °C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
AUIRF9Z34N
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
E AS , Single Pulse Avalanche Energy (mJ)
L
VDS
500
TOP
BOTTOM
400
ID
-4.2A
-7.2A
-10A
300
200
100
A
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
-10V
QG
QGS
50KΩ
12V
.2μF
.3μF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
AUIRF9Z34N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
V GS
*
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
- V
DD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
[
]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
[
ISD
]
] ***
AUIRF9Z34N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF9Z34N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF9Z34N
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF9Z34N
TO-220
Form
Tube
Complete Part Number
Quantity
50
AUIRF9Z34N
AUIRF9Z34N
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
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