CSD17381F4 www.ti.com SLPS411A – APRIL 2013 – REVISED JULY 2013 30-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17381F4 PRODUCT SUMMARY FEATURES 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd Low Threshold Voltage Ultra Small Footprint (0402 Case Size) – 1.0 mm x 0.6 mm Ultra Low Profile – 0.35 mm Height Integrated ESD Protection Diode – Rated > 4kV HBM – Rated > 2kV CDM Pb and Halogen Free RoHS Compliant VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) VGS(th) • • pC VGS = 1.8V 160 VGS = 2.5V 110 VGS = 4.5V 90 Threshold Voltage mΩ 0.85 V Qty Media CSD17381F4 3,000 7-Inch Reel CSD17381F4R 18,000 13-Inch Reel Package Ship Femto(0402) 1.0mm x 0.6mm SMD Lead Less Tape and Reel Text Added For Spacing ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated DESCRIPTION The FemtoFET™ MOSFET technology has been designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. On Resistance vs. Gate Voltage VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage 12 V ID Continuous Drain Current, TA = 25°C(1) 3.1 A IDM Pulsed Drain Current, TA = 25°C(2) 10 A PD Power Dissipation(1) 500 mW 4 kV 2 kV –55 to 150 °C 2.7 mJ Human Body Model (HBM) ESD Rating Charged Device Model (CDM) TJ, TSTG Operating Junction and Storage Temperature Range EAS Avalanche Energy, single pulse ID = 7.4A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 90°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% 160 RDS(on) - On-State Resistance (mΩ) 133 Drain to Source On Resistance Device Optimized for Load Switch Applications Optimized for General Purpose Switching Applications Single Cell Battery Applications Handheld and Mobile Applications Top View TC = 25°C Id = 0.5A TC = 125ºC Id = 0.5A 150 V pC Text Added For Spacing ORDERING INFORMATION APPLICATIONS • • 30 1040 140 D 130 120 110 100 90 80 70 60 G 0 2 4 6 8 10 VGS - Gate-to- Source Voltage (V) S 12 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. FemtoFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013, Texas Instruments Incorporated CSD17381F4 SLPS411A – APRIL 2013 – REVISED JULY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V IGSS Gate to Source Leakage Current VDS = 0V, VGS = 10V VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA RDS(on) gfs Drain to Source On Resistance Transconductance 30 0.65 V 1 μA 100 nA 0.85 1.10 V VGS = 1.8V, IDS =0.5A 160 250 mΩ VGS = 2.5V, IDS =0.5A 110 143 mΩ VGS = 4.5V, IDS = 0.5A 90 117 mΩ VGS = 8V, IDS =0.5A 84 109 mΩ VDS = 15V, IDS = 0.5A 4.8 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance 150 195 pF 44 57 pF Crss RG Reverse Transfer Capacitance 2.2 2.9 pF Series Gate Resistance 23 Qg Gate Charge Total (4.5V) 1350 pC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) tr td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 15V, f = 1MHz 1040 Ω 133 pC 226 pC 150 pC 1110 pC Turn On Delay Time 3.4 ns Rise Time 1.4 ns 10.8 ns 3.6 ns VDS = 15V, IDS = 0.5A VDS = 15V, VGS = 0V VDS = 0V, VGS = 4.5V, IDS = 0.5A,RG = 2Ω Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = 0.5A, VGS = 0V VDS= 15V, IF = 0.5A, di/dt = 300A/μs 0.73 0.9 V 1500 pC 5.6 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER RθJA (1) (2) 2 Thermal Resistance Junction to Ambient Typical Values (1) Thermal Resistance Junction to Ambient (2) 2 UNIT 90 °C/W 250 °C/W 2 Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. Device mounted on FR4 material with minimum Cu mounting area. Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17381F4 CSD17381F4 www.ti.com SLPS411A – APRIL 2013 – REVISED JULY 2013 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 5 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) 8 7 6 5 4 3 2 VGS =8V VGS =4.5V 1 0 0 0.1 VGS =2.5V VGS =1.8V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS - Drain-to-Source Voltage (V) 0.9 1 VDS = 5V 4 3 2 TC = 125°C TC = 25°C TC = −55°C 1 0 0 G001 Figure 2. Saturation Characteristics 0.4 0.8 1.2 1.6 VGS - Gate-to-Source Voltage (V) 2 Product Folder Links: CSD17381F4 G001 Figure 3. Transfer Characteristics Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated 2.4 3 CSD17381F4 SLPS411A – APRIL 2013 – REVISED JULY 2013 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 0.5A VDS =15V 9 8 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 100 10 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Qg - Gate Charge (nC) 1.8 2 1 2.2 0 3 6 G001 Figure 4. Gate Charge TEXT ADDED FOR SPACING G001 TEXT ADDED FOR SPACING RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 30 160 ID = 250uA 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 −75 −25 25 75 125 TC - Case Temperature (ºC) TC = 25°C Id = 0.5A TC = 125ºC Id = 0.5A 150 140 130 120 110 100 90 80 70 60 175 0 2 G001 Figure 6. Threshold Voltage vs. Temperature TEXT ADDED FOR SPACING G001 TEXT ADDED FOR SPACING ID =0.5A 1.3 1.2 1.1 1 0.9 0.8 0.7 −75 12 10 VGS = 1.8V VGS = 8V ISD − Source-to-Drain Current (A) 1.4 4 6 8 10 VGS - Gate-to- Source Voltage (V) Figure 7. On-State Resistance vs. Gate-to-Source Voltage 1.5 Normalized On-State Resistance 27 Figure 5. Capacitance 1.2 −25 25 75 125 TC - Case Temperature (ºC) 175 TC = 25°C TC = 125°C 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) G001 Figure 8. Normalized On-State Resistance vs. Temperature 4 9 12 15 18 21 24 VDS - Drain-to-Source Voltage (V) 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17381F4 CSD17381F4 www.ti.com SLPS411A – APRIL 2013 – REVISED JULY 2013 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100 1ms 10ms 100ms 1s DC 10 1 0.1 Single Pulse Typical RthetaJA =250ºC/W(min Cu) 0.01 0.01 TC = 25ºC TC = 125ºC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) 10 1 0.1 0.001 50 0.01 0.1 TAV - Time in Avalanche (mS) G001 Figure 10. Maximum Safe Operating Area 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING IDS - Drain- to- Source Current (A) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 −50 Typical RthetaJA =90ºC/W(max Cu) −25 0 25 50 75 100 125 TA - AmbientTemperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17381F4 5 CSD17381F4 SLPS411A – APRIL 2013 – REVISED JULY 2013 www.ti.com MECHANICAL DATA 0402 Mechanical Dimensions (1) All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994) (2) This drawing is subject to change without notice (3) This package is a PB-Free solder land design Recommended Minimum PCB Layout (1) 6 All dimensions are in millimeters. Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17381F4 CSD17381F4 www.ti.com SLPS411A – APRIL 2013 – REVISED JULY 2013 Recommended Stencil Pattern (1) All dimensions are in millimeters. Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17381F4 7 CSD17381F4 SLPS411A – APRIL 2013 – REVISED JULY 2013 www.ti.com CSD17381F4 Embossed Carrier Tape Dimensions (1) Pin 1 will be oriented in the top right quadrant of the tape enclosure (Quadrant 2), closest to the carrier tape sprocket holes. spacer REVISION HISTORY Changes from Original (April 2013) to Revision A Page • Added ESD info to Features ................................................................................................................................................. 1 • Included Jumbo Real Ordering Information .......................................................................................................................... 1 • Added ESD Rating Info to Absolute Maximum Table ........................................................................................................... 1 • Added Circuit Schematic to PinOut View ............................................................................................................................. 1 8 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17381F4 PACKAGE MATERIALS INFORMATION www.ti.com 16-May-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD17381F4 Package Package Pins Type Drawing SPQ PICOST AR 3000 YJC 3 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 180.0 8.4 Pack Materials-Page 1 0.7 B0 (mm) K0 (mm) P1 (mm) 1.1 0.46 4.0 W Pin1 (mm) Quadrant 8.0 Q2 PACKAGE MATERIALS INFORMATION www.ti.com 16-May-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD17381F4 PICOSTAR YJC 3 3000 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2013, Texas Instruments Incorporated