CSD19531KCS www.ti.com SLPS407 – SEPTEMBER 2013 100V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD19531KCS FEATURES 1 • • • • • • • 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C TYPICAL VALUE Drain to Source Voltage 100 V Qg Gate Charge Total (10V) 37 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage APPLICATIONS • • • UNIT VDS 7.5 nC VGS = 6V 7.3 mΩ VGS = 10V 6.4 mΩ 2.7 V ORDERING INFORMATION Secondary Side Synchronous Rectifier Hot Swap Telecom Motor Control Device Package Media Qty Ship CSD19531KCS TO-220 Plastic Package Tube 50 Tube ABSOLUTE MAXIMUM RATINGS DESCRIPTION This 100V, 6.4mΩ, TO-220 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. TA = 25°C VALUE UNIT VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V Continuous Drain Current (Package limited), TC = 25°C 100 Continuous Drain Current (Silicon limited), TC = 25°C 105 Continuous Drain Current (Silicon limited), TC = 100°C 67 IDM Pulsed Drain Current (1) 122 A PD Power Dissipation 179 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 60A, L = 0.1mH, RG = 25Ω 180 mJ Pin Out Drawing ID Drain (Pin 2) Gate (Pin 1) A (1) Pulse duration ≤300μs, Duty cycle ≤1% Source (Pin 3) RDS(on) vs VGS GATE CHARGE 10 TC = 25°C, I D = 60A TC = 125°C, I D = 60A 18 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 20 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 60A VDS = 50V 9 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 24 28 Qg - Gate Charge (nC) 32 36 40 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013, Texas Instruments Incorporated CSD19531KCS SLPS407 – SEPTEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 80V IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Drain to Source On Resistance gfs Transconductance 100 2.2 V 1 μA 100 nA 2.7 3.3 V 7.3 8.8 mΩ VGS = 10V, ID = 60A 6.4 7.7 mΩ VDS = 10V, ID = 60A 137 VGS = 6V, ID = 60A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (10V) 38 nC Qgd Gate Charge Gate to Drain 7.5 nC Qgs Gate Charge Gate to Source 11.9 nC Qg(th) Gate Charge at Vth 7.3 nC Qoss Output Charge 98 nC td(on) Turn On Delay Time 8.4 ns tr Rise Time 7.2 ns td(off) Turn Off Delay Time 16 ns tf Fall Time 4.1 ns VGS = 0V, VDS = 50V, f = 1MHz VDS = 50V, ID = 60A VDS = 50V, VGS = 0V VDS = 50V, VGS = 10V, IDS = 60A, RG = 0Ω 2980 3870 pF 560 728 pF 13 17 pF 1.3 2.6 Ω Diode Characteristics VSD Diode Forward Voltage ISD = 60A, VGS = 0V 0.9 Qrr Reverse Recovery Charge 270 nC trr Reverse Recovery Time VDS= 50V, IF = 60A, di/dt = 300A/μs 1 V 83 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) MAX UNIT RθJC Thermal Resistance Junction to Case PARAMETER 0.7 °C/W RθJA Thermal Resistance Junction to Ambient 62 °C/W 2 Submit Documentation Feedback MIN TYP Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19531KCS CSD19531KCS www.ti.com SLPS407 – SEPTEMBER 2013 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance TEXT ADDED FOR SPACING 200 180 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) TEXT ADDED FOR SPACING 200 160 140 120 100 80 60 VGS =10V VGS =8V VGS =6V 40 20 0 0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) 2 VDS = 5V 160 140 120 100 80 60 TC = 125°C TC = 25°C TC = −55°C 40 20 0 0 G001 Figure 2. Saturation Characteristics 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 Product Folder Links: CSD19531KCS G001 Figure 3. Transfer Characteristics Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated 8 3 CSD19531KCS SLPS407 – SEPTEMBER 2013 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 60A VDS = 50V 9 8 10000 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 2 10 1 0 0 4 8 12 16 20 24 28 Qg - Gate Charge (nC) 32 36 1 40 0 10 20 G001 Figure 4. Gate Charge TEXT ADDED FOR SPACING G001 TEXT ADDED FOR SPACING 3.1 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 100 20 ID = 250uA 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 −75 −25 25 75 125 TC - Case Temperature (ºC) TC = 25°C, I D = 60A TC = 125°C, I D = 60A 18 16 14 12 10 8 6 4 2 0 175 0 2 G001 Figure 6. Threshold Voltage vs. Temperature TEXT ADDED FOR SPACING 18 20 G001 TEXT ADDED FOR SPACING 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 100 VGS = 6V VGS = 10V ISD − Source-to-Drain Current (A) 2 4 Figure 7. On-State Resistance vs. Gate-to-Source Voltage 2.2 Normalized On-State Resistance 90 Figure 5. Capacitance 3.3 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 ID =60A −25 25 75 125 TC - Case Temperature (ºC) 175 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) G001 Figure 8. Normalized On-State Resistance vs. Temperature 4 30 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19531KCS CSD19531KCS www.ti.com SLPS407 – SEPTEMBER 2013 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100 1ms 10ms 1000 100ms 1s DC 100 10 1 0.1 Single Pulse Typical RthetaJA = 50ºC/W 0.01 0.01 TC = 25ºC TC = 125ºC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 1000 10 0.01 0.1 TAV - Time in Avalanche (mS) G001 Figure 10. Maximum Safe Operating Area 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING IDS - Drain- to- Source Current (A) 120 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 TC - Case Temperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19531KCS 5 CSD19531KCS SLPS407 – SEPTEMBER 2013 www.ti.com MECHANICAL DATA KCS Package Dimensions Notes: 1. All linear dimensions are in inches 2. This drawing is subject to change without notice 3. Lead Dimensions are not controlled within "C" area 4. All lead dimensions apply before solder dip 5. The center lead is in electrical contact with the mounting tab 6. The chamfer at "F" is optional 7. Thermal pad contour at "G" optional with these dimensions 8. "H" Falls within JEDEC TO-220 variation AB, except minimum lead thickness, minimum exposed pad length, and maximum body length. Table 1. Pin Configuration 6 Position Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19531KCS IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2013, Texas Instruments Incorporated