TI CSD19531KCS

CSD19531KCS
www.ti.com
SLPS407 – SEPTEMBER 2013
100V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD19531KCS
FEATURES
1
•
•
•
•
•
•
•
2
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package
PRODUCT SUMMARY
TA = 25°C
TYPICAL VALUE
Drain to Source Voltage
100
V
Qg
Gate Charge Total (10V)
37
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
Drain to Source On Resistance
VGS(th)
Threshold Voltage
APPLICATIONS
•
•
•
UNIT
VDS
7.5
nC
VGS = 6V
7.3
mΩ
VGS = 10V
6.4
mΩ
2.7
V
ORDERING INFORMATION
Secondary Side Synchronous Rectifier
Hot Swap Telecom
Motor Control
Device
Package
Media
Qty
Ship
CSD19531KCS
TO-220 Plastic
Package
Tube
50
Tube
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
This 100V, 6.4mΩ, TO-220 NexFET™ power
MOSFET has been designed to minimize losses in
power conversion applications.
TA = 25°C
VALUE
UNIT
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
Continuous Drain Current (Package limited),
TC = 25°C
100
Continuous Drain Current (Silicon limited),
TC = 25°C
105
Continuous Drain Current (Silicon limited),
TC = 100°C
67
IDM
Pulsed Drain Current (1)
122
A
PD
Power Dissipation
179
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, single pulse
ID = 60A, L = 0.1mH, RG = 25Ω
180
mJ
Pin Out Drawing
ID
Drain (Pin 2)
Gate
(Pin 1)
A
(1) Pulse duration ≤300μs, Duty cycle ≤1%
Source (Pin 3)
RDS(on) vs VGS
GATE CHARGE
10
TC = 25°C, I D = 60A
TC = 125°C, I D = 60A
18
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (mΩ)
20
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
18
20
G001
ID = 60A
VDS = 50V
9
8
7
6
5
4
3
2
1
0
0
4
8
12
16
20
24
28
Qg - Gate Charge (nC)
32
36
40
G001
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
CSD19531KCS
SLPS407 – SEPTEMBER 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 80V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = 20V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
100
2.2
V
1
μA
100
nA
2.7
3.3
V
7.3
8.8
mΩ
VGS = 10V, ID = 60A
6.4
7.7
mΩ
VDS = 10V, ID = 60A
137
VGS = 6V, ID = 60A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Series Gate Resistance
Qg
Gate Charge Total (10V)
38
nC
Qgd
Gate Charge Gate to Drain
7.5
nC
Qgs
Gate Charge Gate to Source
11.9
nC
Qg(th)
Gate Charge at Vth
7.3
nC
Qoss
Output Charge
98
nC
td(on)
Turn On Delay Time
8.4
ns
tr
Rise Time
7.2
ns
td(off)
Turn Off Delay Time
16
ns
tf
Fall Time
4.1
ns
VGS = 0V, VDS = 50V, f = 1MHz
VDS = 50V, ID = 60A
VDS = 50V, VGS = 0V
VDS = 50V, VGS = 10V,
IDS = 60A, RG = 0Ω
2980
3870
pF
560
728
pF
13
17
pF
1.3
2.6
Ω
Diode Characteristics
VSD
Diode Forward Voltage
ISD = 60A, VGS = 0V
0.9
Qrr
Reverse Recovery Charge
270
nC
trr
Reverse Recovery Time
VDS= 50V, IF = 60A,
di/dt = 300A/μs
1
V
83
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
MAX
UNIT
RθJC
Thermal Resistance Junction to Case
PARAMETER
0.7
°C/W
RθJA
Thermal Resistance Junction to Ambient
62
°C/W
2
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MIN
TYP
Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: CSD19531KCS
CSD19531KCS
www.ti.com
SLPS407 – SEPTEMBER 2013
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
TEXT ADDED FOR SPACING
200
180
180
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
TEXT ADDED FOR SPACING
200
160
140
120
100
80
60
VGS =10V
VGS =8V
VGS =6V
40
20
0
0
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
2
VDS = 5V
160
140
120
100
80
60
TC = 125°C
TC = 25°C
TC = −55°C
40
20
0
0
G001
Figure 2. Saturation Characteristics
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
7
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G001
Figure 3. Transfer Characteristics
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CSD19531KCS
SLPS407 – SEPTEMBER 2013
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TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100000
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
ID = 60A
VDS = 50V
9
8
10000
C − Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
10
7
6
5
4
3
1000
100
2
10
1
0
0
4
8
12
16
20
24
28
Qg - Gate Charge (nC)
32
36
1
40
0
10
20
G001
Figure 4. Gate Charge
TEXT ADDED FOR SPACING
G001
TEXT ADDED FOR SPACING
3.1
RDS(on) - On-State Resistance (mΩ)
VGS(th) - Threshold Voltage (V)
100
20
ID = 250uA
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
−75
−25
25
75
125
TC - Case Temperature (ºC)
TC = 25°C, I D = 60A
TC = 125°C, I D = 60A
18
16
14
12
10
8
6
4
2
0
175
0
2
G001
Figure 6. Threshold Voltage vs. Temperature
TEXT ADDED FOR SPACING
18
20
G001
TEXT ADDED FOR SPACING
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
−75
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
100
VGS = 6V
VGS = 10V
ISD − Source-to-Drain Current (A)
2
4
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
2.2
Normalized On-State Resistance
90
Figure 5. Capacitance
3.3
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
ID =60A
−25
25
75
125
TC - Case Temperature (ºC)
175
0.0001
0
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
G001
Figure 8. Normalized On-State Resistance vs. Temperature
4
30
40
50
60
70
80
VDS - Drain-to-Source Voltage (V)
1
G001
Figure 9. Typical Diode Forward Voltage
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Product Folder Links: CSD19531KCS
CSD19531KCS
www.ti.com
SLPS407 – SEPTEMBER 2013
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
1ms
10ms
1000
100ms
1s
DC
100
10
1
0.1
Single Pulse
Typical RthetaJA = 50ºC/W
0.01
0.01
TC = 25ºC
TC = 125ºC
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
5000
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
1000
10
0.01
0.1
TAV - Time in Avalanche (mS)
G001
Figure 10. Maximum Safe Operating Area
1
G001
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
IDS - Drain- to- Source Current (A)
120
100
80
60
40
20
0
−50
−25
0
25
50
75
100 125
TC - Case Temperature (ºC)
150
175
G001
Figure 12. Maximum Drain Current vs. Temperature
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CSD19531KCS
SLPS407 – SEPTEMBER 2013
www.ti.com
MECHANICAL DATA
KCS Package Dimensions
Notes:
1. All linear dimensions are in inches
2. This drawing is subject to change without notice
3. Lead Dimensions are not controlled within "C" area
4. All lead dimensions apply before solder dip
5. The center lead is in electrical contact with the mounting tab
6. The chamfer at "F" is optional
7. Thermal pad contour at "G" optional with these dimensions
8. "H" Falls within JEDEC TO-220 variation AB, except minimum lead thickness, minimum exposed pad length,
and maximum body length.
Table 1. Pin Configuration
6
Position
Designation
Pin 1
Gate
Pin 2 / Tab
Drain
Pin 3
Source
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Product Folder Links: CSD19531KCS
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