AP4226GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Simple Drive Requirement
D2
D2
D1
D1
▼ Dual N MOSFET Package
▼ RoHS Compliant
SO-8
G1
S1
BVDSS
30V
RDS(ON)
18mΩ
ID
G2
S2
8.2A
Description
D2
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
± 20
V
Continuous Drain Current
3
8.2
A
Continuous Drain Current
3
6.7
A
30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
200806092
AP4226GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=6A
-
16
18
mΩ
VGS=4.5V, ID=4A
-
21
28
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=8A
-
20
30
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
VDS=15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
31
-
ns
tf
Fall Time
RD=15Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450 2320
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
IS=8A, VGS=0V,
-
27
-
ns
dI/dt=100A/µs
-
18
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4226GM-HF
35
35
T A =25 o C
10V
5.0V
25
4.0V
20
15
V G =3.0V
10V
5.0V
T A =150 o C
30
ID , Drain Current (A)
ID , Drain Current (A)
30
4.0V
25
20
V G =3.0V
15
10
10
5
5
0
0
0
1
1
2
2
0
3
V DS , Drain-to-Source Voltage (V)
1
1
2
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
I D =6A
V GS =10V
I D =4A
T A =25 ℃
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
60
40
1.4
1.2
1
20
0.8
0
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.2
10
T j =25 o C
T j =150 o C
IS(A)
VGS(th) (V)
2.0
1
1.8
1.6
0.1
1.4
0
0.4
0.8
1.2
V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4226GM-HF
f=1.0MHz
10000
16
V DS =15V
V DS =20V
V DS =24V
12
C (pF)
VGS , Gate to Source Voltage (V)
I D =8A
8
C iss
1000
C oss
4
C rss
100
0
0
10
20
30
40
1
50
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T c =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 135℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
T j =25 o C
T j =150 o C
QG
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4