AP4961GM RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Lower On-resistance D2 D1 ▼ Simple Drive Requirement D1 ▼ Dual P MOSFET Package -20V RDS(ON) 28mΩ ID G2 S2 SO-8 BVDSS -7A G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -20 V +8 V Continuous Drain Current 3 -7 A Continuous Drain Current 3 -5.5 A -20 A 2 W 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient3 62.5 ℃/W Data and specifications subject to change without notice 1 201101192 AP4961GM o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-7A - - 28 mΩ VGS=-2.5V, ID=-5A - - 32 mΩ VGS=-1.8V, ID=-2A - - 40 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA - - -1 V gfs Forward Transconductance VDS=-5V, ID=-7A - 25 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=70 C) VDS=-16V, VGS=0V - - -25 uA Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA ID=-7A - 26.5 42 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-10V - 2.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 7 - nC 2 td(on) Turn-on Delay Time VDS=-10V - 10 - ns tr Rise Time ID=-1A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω - 90 - ns tf Fall Time VGS=-5V - 75 - ns Ciss Input Capacitance VGS=0V - 2250 3600 pF Coss Output Capacitance VDS=-20V - 235 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 220 - pF Min. Typ. - - Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V 2 Max. Units -1.2 V trr Reverse Recovery Time IS=-7A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 50 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4961GM 20 20 -5.0V -4.5V -3.5V -2.5V V G = -1.8V -ID , Drain Current (A) 16 16 12 8 12 8 4 4 0 0 0 0 1 1 2 0 2 1 -V DS , Drain-to-Source Voltage (V) 2 3 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 34 I D = -2 A I D =-7A V G =-4.5V T A =25 o C 1.4 Normalized RDS(ON) 30 RDS(ON) (mΩ) -5.0V -4.5V -3.5V -2.5V V G = -1.8V o T A = 150 C -ID , Drain Current (A) o T A = 25 C 26 22 1.2 1.0 0.8 18 14 0.6 0 2 4 6 -50 8 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 2.0 Normalized -VGS(th) (V) 1.6 -IS(A) 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4961GM f=1.0MHz 3200 I D =-7A V DS =-10V 5 2400 C iss 4 C (pF) -VGS , Gate to Source Voltage (V) 6 3 1600 2 800 1 C oss C rss 0 0 0 10 20 30 40 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 Normalized Thermal Response (Rthja) 100 100us -ID (A) Operation in this area limited by RDS(ON) 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =-5V o T j =25 C o VG T j =150 C -ID , Drain Current (A) 16 QG -4.5V 12 QGS QGD 8 4 Charge Q 0 0 0.4 0.8 1.2 1.6 2 2.4 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4